SIMS Presentation Sajan Suraj Karan

8/12/2019 SIMS Presentation Sajan Suraj Karan

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MEL:471 Material characterization techniques

Secondary ion mass spectrometry (SIMS)

Presented by: Sajan meena(2010ME1118)

Suraj karan (2012MEB1117)

Course instructor:Dr.Ravi mohan Prasad

28 March 2014


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Contents

Introduction

Fundamental principle of SIMS

Instrumentation

Operation mode of SIMS

Advantage & limitation of SIMS

Application of SIMS

Comparison to other analysis techniques

Historical background

References


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Introduction

Image 1: SIMS[3]


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Fundamental principle of SIMS

Image 2:working principle of SIMS[3]


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Secondary ion yield :Elemental effect

Image 3: Elemental effect on sputter yield [4]


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Instrumentation

(1/2)High energy (usually severalKev) ions are supplied by an ion gun

(3)Focused on to the sample

(4)Which ionizes and sputters

some atoms of the surface

(5)These secondary ions are thencollected by ion lenses

(6)Filter according to atomic mass

(7,top),projected onto an electronmultiplier

(7,bottom),Faraday cup

(8)CCD screen

Image5: Instrumentation

in typical SIMS instrument


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Primary ion source

(A) Duoplasmatrons (B) Cs ion source

Image 6: Ion source in SIMS[6]


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Mass analyzers(A)Quadrupole mass analyzer

(B)Time of flight mass analyzer


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Operation mode of SIMS

Static SIMS

In this mode pulsed ion beamand TOF mass analyzer is used

Used to study the compositionof the outermost atomic layers,including the nature andproperties of adsorbed layers

Applications of static SIMS areanalysis of thin films, polymers,biomaterials, and the detectionof trace elements insemiconductors and geologicalsamples

Dynamic SIMS

It use high dose of primary ionbeam and usually quadrupoleis used.

It is used for the determinationof depth profiles.

For example dopantdistribution in semiconductor.


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SIMS Imaging

By rastering a finely focused ion beam over thesurface, a mass resolved secondary ion imagescan also be obtained.

Imaging is possible in both static and dynamicmodes.

LMIS achieves the best spatial resolution.


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Advantage & limitation of SIMSAdvantage:

Elements from H to U can be detected

Most elements may be detected down toconcentrations of 1ppm or 1ppb

Little sample preparation is required Low material consumption in sputtering process

Depth profiling analysis up to few m depth

Limitation: Sample must be compatible with UHV

Sputtering process is poorly understood


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Application of SIMS To determine the elemental, isotopic, or

molecular composition of the surface Depth profiling (analysis of concentration

variation as a function of depth)

Analysis of trace element in solid materials


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Comparison to other techniques

Elemental sensitivity is greater than XPS,AES,XRF

XPS and AES do not detect H,and XRF has verypoor sensitivity to Li, and Be.

Surface specificity is greater than XPS, AES and

XRF. Imaging SIMS contain topographic contrast and

provide surface visualization, as in SEM but with

lower spatial resolution.


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Historical development of SIMS

1910

J.J.Thomson observed release of positive ions and neutralatoms from a solid surface induced by ion bombardment

1949 First prototype experiments on SIMS was conducted by Herzog

1950

Honig constructed a SIMS instrument at RCA Laboratories inPrinceton, New Jersey

1970

K. Wittmaack and C. Magee developed SIMS instruments

equipped with Quadrupole mass analysers(dynamic SIMS)

1975

Benninghoven developed SIMS instrument with time-of-flightmass spectrometers (static SIMS)


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References[1] http://en.wikipedia.org/wiki/Secondary_ion_mass_spectrometry

[2] http://www.ifw-dresden.de/institutes/ikm/departments/micro[3] http://www.chem.qmul.ac.uk/surfaces/scc/scat5_5.htm

[4] http://www.geos.ed.ac.uk/facilities/ionprobe/SIMS4.pdf

[5] http://www.minisims.com/docs/introduct ion_to_sims.pdf

[6]http://serc.carleton.edu/research_education/geochemsheets/techniques

[7] http://www.chm.bris.ac.uk/ms/theory/detection.html
http://en.wikipedia.org/wiki/Secondary_ion_mass_spectrometryhttp://www.ifw-dresden.de/institutes/ikm/departments/microhttp://www.ifw-dresden.de/institutes/ikm/departments/microhttp://www.chem.qmul.ac.uk/surfaces/scc/scat5_5.htmhttp://www.chem.qmul.ac.uk/surfaces/scc/scat5_5.htmhttp://www.geos.ed.ac.uk/facilities/ionprobe/SIMS4.pdfhttp://www.geos.ed.ac.uk/facilities/ionprobe/SIMS4.pdfhttp://www.minisims.com/docs/introduction_to_sims.pdfhttp://www.minisims.com/docs/introduction_to_sims.pdfhttp://www.chm.bris.ac.uk/ms/theory/detection.htmlhttp://www.chm.bris.ac.uk/ms/theory/detection.htmlhttp://www.chm.bris.ac.uk/ms/theory/detection.htmlhttp://www.minisims.com/docs/introduction_to_sims.pdfhttp://www.geos.ed.ac.uk/facilities/ionprobe/SIMS4.pdfhttp://www.chem.qmul.ac.uk/surfaces/scc/scat5_5.htmhttp://www.ifw-dresden.de/institutes/ikm/departments/microhttp://en.wikipedia.org/wiki/Secondary_ion_mass_spectrometry


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SIMS Presentation Sajan Suraj Karan

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