Report - TT8K11TCR : Transistors...ゲート総電荷量 Qg*4 VDD ⋍ 15V - 2.5 ゲート･ソース間電荷量 Q gs*4 I D = 3A - 0.8 - nC ゲート･ドレイン間電荷量 Q gd*4 V GS

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