Dispositivos Optoelectrnicos
Dispositivos Semicoductores - DIEC/UNS
TiposFotodetectores: Detectan cambios de energa fotnica, transformndolos en energa elctricaCeldas solares:Transforman energa lumnica en elctricaLED / Diodos Laser: Transforman energa elctrica en energa lumnicaOptoacopladores
Dispositivos Semicoductores - DIEC/UNS
Dispositivos Semicoductores - DIEC/UNS
4.2x1014 Hz6x1014 Hz
Dispositivos Semicoductores - DIEC/UNS
Dispositivos Semicoductores - DIEC/UNS
Fotodiodos p-nJuntura p-n que permite penetracin de luz en la vecindad de la unin metalrgicaAbsorcin de luz crea pares hueco-electrn
Dispositivos Semicoductores - DIEC/UNS
Fotodiodos p-nPortadores generados en la zona de vaciamiento son arrastrados por el E. Tasa de Generacin ptica: GL
Si W menor que la long. Del diodo, IL es independiente de la tensin aplicada y proporcional a la intensidad de luz
Dispositivos Semicoductores - DIEC/UNS
Respuesta espectralVariacin de IL con la longitud de onda de luz incidenteFotones generan pares h-e solo si Eph>EG. Para Si, EG = 1.12 eV, y max=1.1m
Dispositivos Semicoductores - DIEC/UNS
Fotodiodos p-nRespuesta FrecuencialVelocidad de respuesta ante cambios de la luz incidenteFotodiodo p-n tiene capacidades limitadasPortadores minoritarios deben difundir hasta la zona de vaciamiento: proceso lentoMxima velocidad: decenas de Mhz
Dispositivos Semicoductores - DIEC/UNS
Fotodiodo p-i-nTop semiconductor thin, to minimize absorptioni region is depletedMost of the photocurrent is generated in the depletion region
Dispositivos Semicoductores - DIEC/UNS
Fotodiodo p-i-ni region can be tailored for specific wavelengthsFrequency response is much better than Si diodes (most current is generated in the dep. Region)Freq. response about GHz
Aplicaciones en fibra ptica requieren > 1.1m, y menores bandgap (In Ga As)
Dispositivos Semicoductores - DIEC/UNS
Fotodiodos de AvalanchaFotodiodos operados cerca del punto de ruptura inversaGanancia en la generacin de portadoresMultiplicacin de avalancha amplifica los portadores provocados por la luz
Dispositivos Semicoductores - DIEC/UNS
FotodiodosFactores ImportantesVelocidad de respuestaEficiencia cuntica: relacin entre fotones y pares h-eLinealidad Uniformidad espacialRuido oscuro (dark noise)
Dispositivos Semicoductores - DIEC/UNS
Hamamatsu model S2386 silicon photodiode
Dispositivos Semicoductores - DIEC/UNS
Dispositivos Semicoductores - DIEC/UNS
Toshiba TPS850
Dispositivos Semicoductores - DIEC/UNS
Celdas SolaresHonda dream, the winning car in the 1996 World Solar Challenge. The custom made cells for the car are greater than 20% efficient. (Photograph PVSRC)
Dispositivos Semicoductores - DIEC/UNS
Celdas SolaresJunturas p-n de gran areaDesign to minimize energy losses
Voc: open circuit voltageIsc: short circuit currentPmax = Im Vm
Dispositivos Semicoductores - DIEC/UNS
Celdas solaresMedida de desempeo: eficiencia de conversin
Output from the sunArea beyond G is power lost cause it cannot be absorbed20% lost in Si, 35% in GaAsThe Eph>Eg energy adds kinetic energy (heat): 40% in Si, 30% in GaAs
Dispositivos Semicoductores - DIEC/UNS
Celdas Solares
Dispositivos Semicoductores - DIEC/UNS
Celdas SolaresTop contact coverage of the cell surface can be minimised (although this may result in increased series resistance). Anti-reflection coatings on the top surface of the cell. Reflection reduced by surface texturing. The solar cell can be made thicker to increase absorptionThe optical path length may be increased by a combination of surface texturing and light trapping.
http://www.udel.edu/igert/pvcdrom/index.html
Dispositivos Semicoductores - DIEC/UNS
Celdas SolaresArea: 22cm2 Efficiency: 23.5% Voc: 703 mV Isc: 914mA Jsc: 41.3mA Vmp: 600mV FF: 0.81 Imp: 868 mA
Dispositivos Semicoductores - DIEC/UNS
Light Emitting Diode (LED)Definition: a semiconductor device that emits incoherent narrow-spectrum light when electrically biased in the forward direction
Courtesy of Wikipedia http://en.wikipedia.org/wiki/LED
Dispositivos Semicoductores - DIEC/UNS
PrincipleForward bias injects majority carriers in opposite regions where they recombineIn indirect semiconductor (Si) recombination produces heatIn direct semiconductors (GaAs) recombination occurs from band to band and emits photons
Dispositivos Semicoductores - DIEC/UNS
PrincipleThree requirements to produce visible LEDDirect semiconductor (Si, Ge, GaP, AlAs,SiC, excluded)Bandgap between 1.77eV and 3.10eV (GaAs bandgap too small)Able to allow pn junction diodes Need for alloys
Dispositivos Semicoductores - DIEC/UNS
LEDsExternal quantum efficiency: is due to reflections in the Interface air-semiconductor = Photo power out/electrical power
Dispositivos Semicoductores - DIEC/UNS
Light Emitting Diode (LED)
LED v.s. Incandescent (Edisons lightbulb) and Flourescent BulbsMuch longer life span (105 - 106 hrs v.s. 103 / 104 hrs)Suitable for applications that are subject to frequent on-off cyclingEfficiency: better than incandescent but currently worse than flourescent bulbsSource: US Department of Energy http://www.netl.doe.gov/ssl/faqs.htm
Dispositivos Semicoductores - DIEC/UNS
LEDs for lighting12 Volt MR16 LED spotlight bulbsEach LED spotlight has 20 ultrabright 15,000mcd LEDs producing a similar amount of light to a 20W halogen bulb1 Watt of power!
Dispositivos Semicoductores - DIEC/UNS
LED EfficiencyInternal Quantum Efficiency (int)Definition: ratio of the number of electrons flowing in the external circuit to the number of photons produced within the device Has been improved up to 80%
External Quantum EfficiencyDefinition: The percentage of photons that can be extracted to the ambient.Typically 1% ~ 10%Limiting factor of LED efficiencyImprovement techniques: dome-shaped package, textured surface, photonic crystal, Source: Lecture Note of Optoelectronic Devices (by Sheng-fu Horng, Dept. of Electrical Engrg, NTHU, Hsinchu, Taiwan)
Dispositivos Semicoductores - DIEC/UNS
LED
Dispositivos Semicoductores - DIEC/UNS
OptoacopladoresAislacin elctrica entre dos circuitos. Comunicacin pticaTpicamente se utilizan haces de luz entre el rojo al infrarrojo
Dispositivos Semicoductores - DIEC/UNS
Caractersticas importantes:Tensin de aislacinBuena relacin de transferenciaBaja capacidad de acoplamientoImnunidad a interferencias
Dispositivos Semicoductores - DIEC/UNS
Dispositivos Semicoductores - DIEC/UNS
Dispositivos Semicoductores - DIEC/UNS
Dispositivos Semicoductores - DIEC/UNS
ReferenciasRobert F. Pierret, Semiconductor Device Fundamentals, Addison Wesley, 1996. Captulos 6, 9, 14.Stanley G. Burns, Paul R. Bond, Principles of Electronic Circuits, PWS Publishing Company, 1997. Captulo 3.
Dispositivos Semicoductores - DIEC/UNS
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