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MCP1825/MCP1825S
Features
500 mA Output Current Capability Input Operating Voltage Range: 2.1V to 6.0V Adjustable Output Voltage Range: 0.8V to 5.0V
(MCP1825 only) Standard Fixed Output Voltages:
- 0.8V, 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V Other Fixed Output Voltage Options Available
Upon Request Low Dropout Voltage: 210 mV Typical at 500 mA Typical Output Voltage Tolerance: 0.5% Stable with 1.0 F Ceramic Output Capacitor Fast response to Load Transients Low Supply Current: 120 A (typ) Low Shutdown Supply Current: 0.1 A (typ)
(MCP1825 only) Fixed Delay on Power Good Output
(MCP1825 only) Short Circuit Current Limiting and
Overtemperature Protection TO-263-5 (DDPAK-5), TO-220-5, SOT-223-5
Package Options (MCP1825). TO-263-3 (DDPAK-3), TO-220-3, SOT-223-3
Package Options (MCP1825S).
Applications
High-Speed Driver Chipset Power Networking Backplane Cards Notebook Computers Network Interface Cards Palmtop Computers 2.5V to 1.XV Regulators
Description
The MCP1825/MCP1825S is a 500 mA Low Dropout(LDO) linear regulator that provides high current andlow output voltages. The MCP1825 comes in a fixed or adjustable output voltage version, with an outputvoltage range of 0.8V to 5.0V. The 500 mA outputcurrent capability, combined with the low output voltagecapability, make the MCP1825 a good choice for newsub-1.8V output voltage LDO applications that havehigh current demands. The MCP1825S is a 3-pin fixedvoltage version.
The MCP1825/MCP1825S is stable using ceramicoutput capacitors that inherently provide lower outputnoise and reduce the size and cost of the entireregulator solution. Only 1 F of output capacitance isneeded to stabilize the LDO.
Using CMOS construction, the quiescent currentconsumed by the MCP1825/MCP1825S is typicallyless than 120 A over the entire input voltage range,making it attractive for portable computing applicationsthat demand high output current. The MCP1825versions have a Shutdown (SHDN) pin. When shutdown, the quiescent current is reduced to less than0.1 A.
On the MCP1825 fixed output versions, the scaled-down output voltage is internally monitored and apower good (PWRGD) output is provided when theoutput is within 92% of regulation (typical). ThePWRGD delay is internally fixed at 110 s (typical).
The overtemperature and short circuit current-limitingprovide additional protection for the LDO during systemfault conditions.
500 mA, Low Voltage, Low Quiescent Current LDO Regulator
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MCP1825/MCP1825S
DS22056A-page 2 2007 Microchip Technology Inc.
Package Types
MCP1825
1 2 3 4 5
6
SOT-223-5
Pin Fixed Adjustable
1 SHDN SHDN
2 VIN VIN3 GND (TAB) GND (TAB)
4 VOUT VOUT5 PWRGD ADJ
6 GND (TAB) GND (TAB)
1 2 3
SOT-223-3
4
MCP1825S
Pin
1 VIN2 GND (TAB)
3 VOUT4 GND (TAB)
Fixed/AdjustableDDPAK-3DDPAK-5 TO-220-3TO-220-5
1 2 3 4 51 2 3 4 5
1 2 3
1 2 3
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2007 Microchip Technology Inc. DS22056A-page 3
MCP1825/MCP1825S
Typical Applications
MCP1825 Adjustable Output Voltage
MCP1825 Fixed Output Voltage
VOUT = 1.8V @ 500 mAVIN = 2.3V to 2.8V
On
Off
1 F
100 k
4.7 FC1 C2
R1
SHDN
VIN
GND
VOUT
PWRGD
20 k R2
VOUT = 1.2V @ 500 mAVIN = 2.1V to 2.8V
On
Off
1 F
40 k
4.7 FC1 C2
R1
SHDN
VIN
GND
VOUT
VADJ
1
1
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MCP1825/MCP1825S
DS22056A-page 4 2007 Microchip Technology Inc.
Functional Block Diagram - Adjustable Output
EA+
VOUT
PMOS
R f C f ISNS
Overtemperature
VREF
Comp
92% of V REF
TDELAY
VIN
Driver w/limitand SHDN
GND
Soft-Start
ADJ/SENSE
UndervoltageLock Out
VINReference
SHDN
SHDN
SHDNSensing
(UVLO)
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2007 Microchip Technology Inc. DS22056A-page 5
MCP1825/MCP1825S
Functional Block Diagram - Fixed Output (3-Pin)
EA+
VOUT
PMOS
R f C f ISNS
Overtemperature
VREF
Comp
92% of V REF
TDELAY
VIN
Driver w/limitand SHDN
GND
Soft-Start
SenseUndervoltageLock Out
VINReference
SHDN
SHDN
SHDNSensing
(UVLO)
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MCP1825/MCP1825S
DS22056A-page 6 2007 Microchip Technology Inc.
Functional Block Diagram - Fixed Output (5-Pin)
EA+
VOUT
PMOS
R f C f ISNS
Overtemperature
VREF
Comp
92% of V REF
TDELAY
VIN
Driver w/limitand SHDN
GND
Soft-Start
SenseUndervoltageLock Out
VINReference
SHDN
SHDN
SHDNSensing
(UVLO)
PWRGD
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2007 Microchip Technology Inc. DS22056A-page 7
MCP1825/MCP1825S
1.0 ELECTRICALCHARACTERISTICS
Absolute Maximum Ratings
VIN....................................................................................6.5V
Maximum Voltage on Any Pin .. (GND 0.3V) to (V DD + 0.3)VMaximum Power Dissipation......... Internally-Limited ( Note 6 )
Output Short Circuit Duration ................................Continuous
Storage temperature .....................................-65C to +150C
Maximum Junction Temperature, T J ...........................+150C
ESD protection on all pins (HBM/MM) ........... 4 kV; 300V
Notice: Stresses above those listed under Maximum Rat-ings may cause permanent damage to the device. This is astress rating only and functional operation of the device atthose or any other conditions above those indicated in theoperational listings of this specification is not implied. Expo-sure to maximum rating conditions for extended periods mayaffect device reliability.
AC/DC CHARACTERISTICSElectrical Specifications: Unless otherwise noted, V IN = VOUT(MAX) + VDROPOUT(MAX) , Note 1 , VR = 1.8V for Adjustable Output,IOUT = 1 mA, C IN = C OUT = 4.7 F (X7R Ceramic), T A = +25C.Boldface type applies for junction temperatures, T J (Note 7 ) of -40C to +125C
Parameters Sym Min Typ Max Units Conditions
Input Operating Voltage V IN 2.1 6.0 V Note 1
Input Quiescent Current I q 120 220 A IL = 0 mA, V OUT = 0.8V to5.0V
Input Quiescent Current for SHDN Mode
ISHDN 0.1 3 A SHDN = GND
Maximum Output Current I OUT 500 mA V IN = 2.1V to 6.0VVR = 0.8V to 5.0V, Note 1
Line Regulation VOUT /(VOUT x VIN)
0.05 0. 16 %/V (Note 1 ) VIN 6V
Load Regulation VOUT /VOUT -1.0 0.5 1.0 % IOUT = 1 mA to 500 mA,(Note 4 )
Output Short Circuit Current I OUT_SC 1.2 A R LOAD < 0.1 , Peak CurrentAdjust Pin Characteristics (Adjustable Output Only)
Adjust Pin Reference Voltage V ADJ 0.402 0.410 0.418 V VIN = 2.1V to V IN = 6.0V,IOUT = 1 mA
Adjust Pin Leakage Current I ADJ -10 0.01 +10 nA V IN = 6.0V, V ADJ = 0V to 6V
Adjust Temperature Coefficient TCV OUT 40 ppm/C Note 3
Fixed-Output Characteristics (Fixed Output Only)
Voltage Regulation V OUT VR - 2.5% VR 0.5% VR + 2.5% V Note 2
Note 1: The minimum V IN must meet two conditions: V IN 2.1V and V IN VOUT(MAX) + VDROPOUT(MAX).2: VR is the nominal regulator output voltage for the fixed cases. V R = 1.2V, 1.8V, etc. V R is the desired set point output
voltage for the adjustable cases. V R = VADJ * ((R 1/R2)+1). Figure 4-1 .3: TCVOUT = (VOUT-HIGH VOUT-LOW ) *10
6 / (VR * Temperature). V OUT-HIGH is the highest voltage measured over thetemperature range. V OUT-LOW is the lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation istested over a load range from 1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below itsnominal value that was measured with an input voltage of V IN = VOUT(MAX) + VDROPOUT(MAX) .
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junctiontemperature and the thermal resistance from junction to air. (i.e., T A, TJ , JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150C rating. Sustained
junction temperatures above 150C can impact device reliability.7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over theambient temperature is not significant.
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DS22056A-page 8 2007 Microchip Technology Inc.
Dropout Characteristics
Dropout Voltage V DROPOUT 210 350 mV Note 5 , IOUT = 500 mA,VIN(MIN) = 2.1V
Power Good Characteristics
PWRGD Input Voltage Operat-ing Range
VPWRGD_VIN 1.0 6.0 V T A = +25C
1.2 6.0 TA = -40C to +125C
For V IN < 2.1V, I SINK = 100 A
PWRGD Threshold Voltage(Referenced to V OUT )
VPWRGD_TH %VOUT Falling Edge
89 92 95 VOUT < 2.5V Fixed,VOUT = Adj.
90 92 94 VOUT >= 2.5V Fixed
PWRGD Threshold Hysteresis V PWRGD_HYS 1.0 2.0 3.0 %VOUT
PWRGD Output Voltage Low V PWRGD_L 0.2 0.4 V IPWRGD SINK = 1.2 mA,ADJ = 0V
PWRGD Leakage P WRGD _ LK 1 nA V PWRGD = VIN = 6.0V
PWRGD Time Delay T PG 110 s Rising EdgeRPULLUP = 10 k
Detect Threshold to PWRGDActive Time Delay
TVDET-PWRGD 200 s V OUT = VPWRGD_TH + 20 mVto VPWRGD_TH - 20 mV
Shutdown Input
Logic High Input V SHDN-HIGH 45 %V IN VIN = 2.1V to 6.0V
Logic Low Input V SHDN-LOW 15 %VIN VIN = 2.1V to 6.0V
SHDN Input Leakage Current SHDN ILK -0.1 0.001 +0.1 A VIN = 6V, SHDN =V IN,SHDN = GND
AC PerformanceOutput Delay From SHDN T OR 100 s SHDN = GND to V IN,
VOUT = GND to 95% V R
Output Noise e N 2.0 V/ Hz IOUT = 200 mA, f = 1 kHz,COUT = 10 F (X7R Ceramic),VOUT = 2.5V
AC/DC CHARACTERISTICS (CONTINUED)Electrical Specifications: Unless otherwise noted, V IN = VOUT(MAX) + VDROPOUT(MAX) , Note 1 , VR = 1.8V for Adjustable Output,IOUT = 1 mA, C IN = C OUT = 4.7 F (X7R Ceramic), T A = +25C.Boldface type applies for junction temperatures, T J (Note 7 ) of -40C to +125C
Parameters Sym Min Typ Max Units Conditions
Note 1: The minimum V IN must meet two conditions: V IN 2.1V and V IN VOUT(MAX) + VDROPOUT(MAX).2: VR is the nominal regulator output voltage for the fixed cases. V R = 1.2V, 1.8V, etc. V R is the desired set point output
voltage for the adjustable cases. V R = VADJ * ((R 1/R2)+1). Figure 4-1 .3: TCVOUT = (VOUT-HIGH VOUT-LOW ) *10
6 / (VR * Temperature). V OUT-HIGH is the highest voltage measured over thetemperature range. V OUT-LOW is the lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation istested over a load range from 1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below itsnominal value that was measured with an input voltage of V IN = VOUT(MAX) + VDROPOUT(MAX) .
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junctiontemperature and the thermal resistance from junction to air. (i.e., T A, TJ , JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150C rating. Sustained
junction temperatures above 150C can impact device reliability.7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over theambient temperature is not significant.
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MCP1825/MCP1825S
Power Supply Ripple RejectionRatio
PSRR 60 dB f = 100 Hz, C OUT = 4.7 F,IOUT = 100 A,VINAC = 100 mV pk-pk,C IN = 0 F
Thermal Shutdown Temperature T SD 150 C I OUT = 100 A, V OUT = 1.8V,VIN = 2.8V
Thermal Shutdown Hysteresis TSD 10 C I OUT = 100 A, V OUT = 1.8V,VIN = 2.8V
AC/DC CHARACTERISTICS (CONTINUED)Electrical Specifications: Unless otherwise noted, V IN = VOUT(MAX) + VDROPOUT(MAX) , Note 1 , VR = 1.8V for Adjustable Output,IOUT = 1 mA, C IN = C OUT = 4.7 F (X7R Ceramic), T A = +25C.Boldface type applies for junction temperatures, T J (Note 7 ) of -40C to +125C
Parameters Sym Min Typ Max Units Conditions
Note 1: The minimum V IN must meet two conditions: V IN 2.1V and V IN VOUT(MAX) + VDROPOUT(MAX).2: VR is the nominal regulator output voltage for the fixed cases. V R = 1.2V, 1.8V, etc. V R is the desired set point output
voltage for the adjustable cases. V R = VADJ * ((R 1/R2)+1). Figure 4-1 .3: TCVOUT = (VOUT-HIGH VOUT-LOW ) *10
6 / (VR * Temperature). V OUT-HIGH is the highest voltage measured over thetemperature range. V OUT-LOW is the lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation istested over a load range from 1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below itsnominal value that was measured with an input voltage of V IN = VOUT(MAX) + VDROPOUT(MAX) .
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junctiontemperature and the thermal resistance from junction to air. (i.e., T A, TJ , JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150C rating. Sustained
junction temperatures above 150C can impact device reliability.7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over theambient temperature is not significant.
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DS22056A-page 10 2007 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature Range T J -40 +125 C Steady State
Maximum Junction Temperature T J +150 C TransientStorage Temperature Range T A -65 +150 C
Thermal Package Resistances
Thermal Resistance, 3LD DDPAK JA 31.4 C/W 4-Layer JC51 StandardBoardJC 3.0
Thermal Resistance, 3LD TO-220 JA 29.4 C/W 4-Layer JC51 StandardBoardJC 2.0
Thermal Resistance, 3LD SOT-223 JA 62 C/W EIA/JEDEC JESD51-751-74 Layer Board
JC 15.0
Thermal Resistance, 5LD DDPAK JA 31.2 C/W 4-Layer JC51 StandardBoardJC 3.0
Thermal Resistance, 5LD TO-220 JA 29.3 C/W 4-Layer JC51 StandardBoardJC 2.0
Thermal Resistance, 5LD SOT-223 JA 62 C/W EIA/JEDEC JESD51-751-74 Layer Board
JC 15.0
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MCP1825/MCP1825S
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, COUT = 4.7 F Ceramic (X7R), C IN = 4.7 F Ceramic (X7R), I OUT = 1 mA,Temperature = +25C, V IN = VOUT + 0.5V, Fixed output.
FIGURE 2-1: Quiescent Current vs. Input Voltage (Adjustable Version).
FIGURE 2-2: Ground Current vs. Load Current (Adjustable Version).
FIGURE 2-3: Quiescent Current vs.Junction Temperature (Adjustable Version).
FIGURE 2-4: Line Regulation vs.Temperature (Adjustable Version).
FIGURE 2-5: Load Regulation vs.Temperature (Adjustable Version).
FIGURE 2-6: Adjust Pin Voltage vs.Temperature (Adjustable Version).
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed hereinare not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range (e.g., outside specified power supply range) and therefore outside the warranted range.
90
100
110
120
130
140
2 3 4 5 6
Input Voltage (V)
Q u
i e s c e n
t C u r r e n
t ( A )
130 C
-45 C
25 C
90 C
VOUT = 1.2V AdjIOUT = 0 mA
0C
100
110120130140150160170180190200
0 100 200 300 400 500 600
Load Current (mA)
G r o u n
d C u r r e n
t ( A )
VIN=3.3V
VOUT = 1.2V Adj
VIN=5.0V
VIN=2.5V
90
100110
120
130
140
150
160
170
-45 -20 5 30 55 80 105 130
Temperature (C)
Q u
i e s c e n
t C u r r e n
t ( A )
VIN=6.0V
VIN=3.0V
VIN=4.0V
VOUT = 1.2V AdjIOUT = 0 mA
VIN=5.0V
VIN=2.1V
0.000.010.020.030.040.050.060.070.080.090.10
-45 -20 5 30 55 80 105 130
Temperature (C)
L i n e
R e g u
l a t i o n
( % / V )
VOUT = 1.2V adjVIN = 2.1V to 6.0V
IOUT = 1 mA
IOUT =500 mA
IOUT = 50 mA
IOUT =100 mA
IOUT =100 mA
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
0.20
-45 -20 5 30 55 80 105 130
Temperature (C)
L o a d
R e g u
l a t i o n
( % )
IOUT = 1.0 mA to 1500 mA
VOUT = 5.0V
VOUT = 3.3V
VOUT = 0.8V
VOUT = 1.8V
0.4070
0.40750.4080
0.4085
0.4090
0.4095
0.4100
0.4105
0.4110
-45 -20 5 30 55 80 105 130
Temperature (C)
A d j u s t
P i n V o
l t a g e
( V )
VOUT = 1.8VIOUT = 1.0 mA
VIN = 2.3V
VIN = 6.0V
VIN = 4.0V
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DS22056A-page 12 2007 Microchip Technology Inc.
Note: Unless otherwise indicated, COUT = 4.7 F Ceramic (X7R), C IN = 4.7 F Ceramic (X7R), I OUT = 1 mA,Temperature = +25C, V IN = VOUT + 0.5V, Fixed output.
FIGURE 2-7: Dropout Voltage vs. Load Current (Adjustable Version).
FIGURE 2-8: Dropout Voltage vs.Temperature (Adjustable Version).
FIGURE 2-9: Power Good (PWRGD)Time Delay vs. Temperature.
FIGURE 2-10: Quiescent Current vs. Input Voltage.
FIGURE 2-11: Quiescent Current vs. Input Voltage.
FIGURE 2-12: Ground Current vs. Load Current.
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0 50 100 150 200 250 300 350 400 450 500
Load Current (mA)
D r o p o u
t V o
l t a g e
( V )
VOUT = 2.5V Adj
VOUT = 5.0V Adj
0.20
0.22
0.24
0.26
0.28
0.30
-45 -20 5 30 55 80 105 130
Temperature (C)
D r o p o u
t V o
l t a g e
( V )
VOUT = 3.3V Adj
VOUT = 5.0V Adj
VOUT = 2.5V Adj
IOUT = 500 mA
100
110
120
130
140
150
160
170
-45 -20 5 30 55 80 105 130
Temperature (C)
P o w e r
G o o
d T i m e
D e l a y
( S )
VOUT = 2.5V Fixed
VIN = 3.0V
VIN = 5.0V
VIN = 4.0V
VIN = 6.0V
90
100
110
120
130
140
150
160
2 3 4 5 6
Input Voltage (V)
Q u
i e s c e n
t C u r r e n
t ( A )
-45C
+130C
+90C+25C
VOUT = 0.8VIOUT = 0 mA
0C
90
100
110
120
130
140
150
3 3.5 4 4.5 5 5.5 6
Input Voltage (V)
Q u
i e s c e n
t C u r r e n
t ( A )
VOUT = 2.5VIOUT = 0 mA
+130C
-45C
+25C
+90C
+0C
0
50
100
150
200
250
0 100 200 300 400 500 600
Load Current (mA)
G r o u n
d C u r r e n
t ( A )
VIN = 2.3V for V R=0.8VVIN = 3.0V for V R=2.5V
VOUT =0.8V
VOUT =2.5V
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MCP1825/MCP1825S
Note: Unless otherwise indicated, COUT = 4.7 F Ceramic (X7R), C IN = 4.7 F Ceramic (X7R), I OUT = 1 mA,Temperature = +25C, V IN = VOUT + 0.5V, Fixed output.
FIGURE 2-13: Quiescent Current vs.Temperature.
FIGURE 2-14: I SHDN vs. Temperature.
FIGURE 2-15: Line Regulation vs.Temperature.
FIGURE 2-16: Line Regulation vs.Temperature.
FIGURE 2-17: Load Regulation vs.Temperature (V OUT < 2.5V Fixed).
FIGURE 2-18: Load Regulation vs.Temperature (V OUT 2.5V Fixed).
95100105110115120
125130135140
-45 -20 5 30 55 80 105 130
Temperature (C)
Q u
i e s c e n
t C u r r e n
t ( A )
VOUT = 0.8V
VOUT = 2.5V
IOUT = 0 mA
VOUT = 5V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
-45 -20 5 30 55 80 105 130
Temperature (C)
I s h d n
( A )
VIN = 2.3V
VIN = 4.0VVIN = 5.0V
VR = 0.8V
VIN = 6.0V
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
-45 -20 5 30 55 80 105 130
Temperature (C)
L i n e
R e g u
l a t i o n
( % / V ) VOUT = 0.8V
VIN = 2.1V to 6.0V
IOUT = 100 mA
IOUT = 500 mA
IOUT = 50 mA
IOUT = 250 mA
IOUT = 1 mA
0.015
0.020
0.025
0.030
0.035
0.040
0.045
-45 -20 5 30 55 80 105 130
Temperature (C)
L i n e
R e g u
l a t i o n
( % / V )
IOUT = 100 mA
IOUT = 1 mA
IOUT = 50 mA
IOUT = 250 mA IOUT = 500 mA
VR = 2.5VVIN = 3.1 to 6.0V
-0.25
-0.15
-0.05
0.05
0.15
0.25
-45 -20 5 30 55 80 105 130
Temperature (C)
L o a d
R e g u
l a t i o n
( % )
VOUT = 0.8VIOUT = 1 mA to 500 mA
VIN = 2.1V
VIN = 4.0VVIN = 5.0V
VIN = 6.0V
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
-45 -20 5 30 55 80 105 130
Temperature (C)
L o a d
R e g u
l a t i o n
( % )
VOUT = 2.5V
VOUT = 5.0V
IOUT = 1 mA to 500 mA
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DS22056A-page 14 2007 Microchip Technology Inc.
Note: Unless otherwise indicated, COUT = 4.7 F Ceramic (X7R), C IN = 4.7 F Ceramic (X7R), I OUT = 1 mA,Temperature = +25C, V IN = VOUT + 0.5V, Fixed output.
FIGURE 2-19: Dropout Voltage vs. Load Current.
FIGURE 2-20: Dropout Voltage vs.Temperature.
FIGURE 2-21: Short Circuit Current vs.Input Voltage.
FIGURE 2-22: Output Noise VoltageDensity vs. Frequency.
FIGURE 2-23: Power Supply RippleRejection (PSRR) vs. Frequency (Adj.).
FIGURE 2-24: Power Supply RippleRejection (PSRR) vs. Frequency.
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0 100 200 300 400 500Load Current (mA)
D r o p o u
t V o
l t a g e
( V )
VOUT = 5.0V
VOUT = 2.5V
0.18
0.20
0.22
0.24
0.26
0.28
0.30
-45 -20 5 30 55 80 105 130
Temperature (C)
D r o p o u
t V o
l t a g e
( V )
IOUT = 500 mA
VOUT = 2.5V
VOUT = 5.0V
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.00 1.00 2.00 3.00 4.00 5.00 6.00
Input Voltage (V)
S h o r t
C i r c u
i t C u r r e n
t ( A ) VOUT = 2.5V
0.01
0.1
1
10
0.01 0.1 1 10 100 1000Frequency (kHz)
N o
i s e
( m V / H z )
VR=0.8V, V IN=2.3V
VR=2.5V, V IN=3.3V C OUT =1 F cer C IN=10 F cer
IOUT =200 mA
-80.0
-70.0
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
0.01 0.1 1 10 100 1000Frequency (kHz)
P S R R ( d B )
VR=1.2V AdjC OUT=10 F ceramic X7RVIN=2.5VC IN=0 FIOUT=10 mA
-90.0-80.0-70.0-60.0-50.0-40.0-30.0-20.0-10.0
0.0
0.01 0.1 1 10 100 1000Frequency (kHz)
P S R R ( d B )
VR=2.5V (Fixed)C OUT=22 F ceramic X7RVIN=3.3VC IN=0 FIOUT=10 mA
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2007 Microchip Technology Inc. DS22056A-page 15
MCP1825/MCP1825S
Note: Unless otherwise indicated, COUT = 4.7 F Ceramic (X7R), C IN = 4.7 F Ceramic (X7R), I OUT = 1 mA,Temperature = +25C, V IN = VOUT + 0.5V, Fixed output.
FIGURE 2-25: 2.5V (Adj.) Startup from V IN .
FIGURE 2-26: 2.5V (Adj.) Startup fromShutdown.
FIGURE 2-27: Power Good (PWRGD)Timing.
FIGURE 2-28: Dynamic Line Response.
FIGURE 2-29: Dynamic Load Response(10 mA to 500 mA).
FIGURE 2-30: Dynamic Load Response(100 mA to 500 mA).
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MCP1825/MCP1825S
DS22056A-page 16 2007 Microchip Technology Inc.
3.0 PIN DESCRIPTIONThe descriptions of the pins are listed in Table 3-1 .
TABLE 3-1: PIN FUNCTION TABLE
3.1 Shutdown Control Input (SHDN)
The SHDN input is used to turn the LDO output voltageon and off. When the SHDN input is at a logic-highlevel, the LDO output voltage is enabled. When theSHDN input is pulled to a logic-low level, the LDOoutput voltage is disabled. When the SHDN input ispulled low, the PWRGD output also goes low and theLDO enters a low quiescent current shutdown statewhere the typical quiescent current is 0.1 A.
3.2 Input Voltage Supply (V IN)
Connect the unregulated or regulated input voltagesource to V IN. If the input voltage source is locatedseveral inches away from the LDO, or the input sourceis a battery, it is recommended that an input capacitor be used. A typical input capacitance value of 1 F to10 F should be sufficient for most applications.
3.3 Ground (GND)
Connect the GND pin of the LDO to a quiet circuitground. This will help the LDO power supply rejectionratio and noise performance. The ground pin of theLDO only conducts the quiescent current of the LDO(typically 120 A), so a heavy trace is not required.For applications have switching or noisy inputs tie theGND pin to the return of the output capacitor. Groundplanes help lower inductance and voltage spikescaused by fast transient load currents and arerecommended for applications that are subjected tofast load transients.
3.4 Regulated Output Voltage (V OUT )
The V OUT pin is the regulated output voltage of theLDO. A minimum output capacitance of 1.0 F isrequired for LDO stability. The PIC18FXXXX is stablewith ceramic, tantalum and aluminum-electrolyticcapacitors. See Section 4.3 Output Capacitor for output capacitor selection guidance.
3.5 Power Good Output (PWRGD)
The PWRGD output is an open-drain output used toindicate when the LDO output voltage is within 92%(typically) of its nominal regulation value. The PWRGDthreshold has a typical hysteresis value of 2%. ThePWRGD output is delayed by 110 s (typical) from thetime the LDO output is within 92% + 3% (maximumhysteresis) of the regulated output value on power-up.This delay time is internally fixed.
3.6 Output Voltage Adjust Input (ADJ)
For adjustable applications, the output voltage isconnected to the ADJ input through a resistor divider that sets the output voltage regulation value. Thisprovides the user the capability to set the outputvoltage to any value they desire within the 0.8V to 5.0Vrange of the device.
3.7 Exposed Pad (EP)
The DDPAK and TO-220 package have an exposedtab on the package. A heat sink may may be mount tothe tab to aid in the removal of heat from the packageduring operation. The exposed tab is at the groundpotential of the LDO.
3-Pin FixedOutput
5-Pin FixedOutput
AdjustableOutput Name Description
1 1 SHDN Shutdown Control Input (active-low)
1 2 2 V IN Input Voltage Supply
2 3 3 GND Ground
3 4 4 V OUT Regulated Output Voltage
5 PWRGD Power Good Output
5 ADJ Voltage Adjust/Sense Input
Exposed Pad Exposed Pad Exposed Pad EP Exposed Pad of the Package (ground potential)
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2007 Microchip Technology Inc. DS22056A-page 17
MCP1825/MCP1825S
4.0 DEVICE OVERVIEWThe MCP1825/MCP1825S is a high output current,Low Dropout (LDO) voltage regulator. The low dropoutvoltage of 210 mV typical at 500 mA of current makesit ideal for battery-powered applications. Unlike other high output current LDOs, the MCP1825/MCP1825S
only draws a maximum of 220 A of quiescent current.The MCP1825 has a shutdown control input and apower good output.
4.1 LDO Output Voltage
The 5-pin MCP1825 LDO is available with either a fixedoutput voltage or an adjustable output voltage. Theoutput voltage range is 0.8V to 5.0V for both versions.The 3-pin MCP1825S LDO is available as a fixedvoltage device.
4.1.1 ADJUST INPUT
The adjustable version of the MCP1825 uses the ADJ
pin (pin 5) to get the output voltage feedback for outputvoltage regulation. This allows the user to set theoutput voltage of the device with two external resistors.The nominal voltage for ADJ is 0.41V.
Figure 4-1 shows the adjustable version of theMCP1825. Resistors R 1 and R 2 form the resistor divider network necessary to set the output voltage.With this configuration, the equation for setting V OUT is:
EQUATION 4-1:
FIGURE 4-1: Typical adjustable output voltage application circuit.
The allowable resistance value range for resistor R 2 isfrom 10 k to 200 k . Solving the equation for R 1yields the following equation:
EQUATION 4-2:
4.2 Output Current and CurrentLimiting
The MCP1825/MCP1825S LDO is tested and ensuredto supply a minimum of 500 mA of output current. TheMCP1825/MCP1825S has no minimum output load, sothe output load current can go to 0 mA and the LDO willcontinue to regulate the output voltage to withintolerance.
The MCP1825/MCP1825S also incorporates an outputcurrent limit. If the output voltage falls below 0.7V dueto an overload condition (usually represents a shortedload condition), the output current is limited to 1.2A(typical). If the overload condition is a soft overload, theMCP1825/MCP1825S will supply higher load currentsof up to 1.5A. The MCP1825/MCP1825S should not beoperated in this condition continuously as it may resultin failure of the device. However, this does allow for device usage in applications that have higher pulsedload currents having an average output current value of 500 mA or less.
Output overload conditions may also result in an over-temperature shutdown of the device. If the junctiontemperature rises above 150C, the LDO will shut
down the output voltage. See Section 4.8 Overtem-perature Protection for more information onovertemperature shutdown.
4.3 Output Capacitor
The MCP1825/MCP1825S requires a minimum outputcapacitance of 1 F for output voltage stability.Ceramic capacitors are recommended because of their size, cost and environmental robustness qualities.
Aluminum-electrolytic and tantalum capacitors can beused on the LDO output as well. The Equivalent SeriesResistance (ESR) of the electrolytic output capacitor must be no greater than 1 ohm. The output capacitor
should be located as close to the LDO output as ispractical. Ceramic materials X7R and X5R have lowtemperature coefficients and are well within theacceptable ESR range required. A typical 1 F X7R0805 capacitor has an ESR of 50 milli-ohms.
Larger LDO output capacitors can be used with theMCP1825/MCP1825S to improve dynamicperformance and power supply ripple rejection perfor-mance. A maximum of 22 F is recommended.Aluminum-electrolytic capacitors are not recom-mended for low temperature applications of < -25C.
V OU T
V ADJ
R1
R2
+
R 2------------------ =
Where:
VOUT = LDO Output Voltage
VADJ = ADJ Pin Voltage(typically 0.41V)
SHDN
GND
ADJ2
1 F
VOUT
4.7 F
VIN
OnOff
R1
R2C1
C2
MCP1825-ADJ
1 3 4 5
R1
R2
V OU T V ADJ
V ADJ -------------------------------- =
Where:
VOUT = LDO Output Voltage
VADJ = ADJ Pin Voltage(typically 0.41V)
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MCP1825/MCP1825S
DS22056A-page 18 2007 Microchip Technology Inc.
4.4 Input Capacitor
Low input source impedance is necessary for the LDOoutput to operate properly. When operating frombatteries, or in applications with long lead length(> 10 inches) between the input source and the LDO,some input capacitance is recommended. A minimum
of 1.0 F to 4.7 F is recommended for mostapplications.
For applications that have output step loadrequirements, the input capacitance of the LDO is veryimportant. The input capacitance provides the LDOwith a good local low-impedance source to pull thetransient currents from in order to respond quickly tothe output load step. For good step responseperformance, the input capacitor should be of equivalent (or higher) value than the output capacitor.The capacitor should be placed as close to the input of the LDO as is practical. Larger input capacitors will alsohelp reduce any high-frequency noise on the input andoutput of the LDO and reduce the effects of anyinductance that exists between the input sourcevoltage and the input capacitance of the LDO.
4.5 Power Good Output (PWRGD)
The PWRGD output is used to indicate when the outputvoltage of the LDO is within 92% (typical value, seeSection 1.0 Electrical Characteristics for Minimumand Maximum specifications) of its nominal regulationvalue.
As the output voltage of the LDO rises, the PWRGDoutput will be held low until the output voltage hasexceeded the power good threshold plus the hysteresisvalue. Once this threshold has been exceeded, thepower good time delay is started (shown as T PG in theElectrical Characteristics table). The power good timedelay is fixed at 110 s (typical). After the time delayperiod, the PWRGD output will go high, indicating thatthe output voltage is stable and within regulation limits.
If the output voltage of the LDO falls below the power good threshold, the power good output will transitionlow. The power good circuitry has a 170 s delay whendetecting a falling output voltage, which helps toincrease noise immunity of the power good output andavoid false triggering of the power good output duringfast output transients. See Figure 4-2 for power goodtiming characteristics.
When the LDO is put into Shutdown mode using theSHDN input, the power good output is pulled lowimmediately, indicating that the output voltage will beout of regulation. The timing diagram for the power good output when using the shutdown input is shown inFigure 4-3 .
The power good output is an open-drain output that canbe pulled up to any voltage that is equal to or less thanthe LDO input voltage. This output is capable of sinking1.2 mA (V PWRGD < 0.4V maximum).
FIGURE 4-2: Power Good Timing.
FIGURE 4-3: Power Good Timing fromShutdown.
4.6 Shutdown Input (SHDN)
The SHDN input is an active-low input signal that turnsthe LDO on and off. The SHDN threshold is apercentage of the input voltage. The typical value of this shutdown threshold is 30% of V IN, with minimumand maximum limits over the entire operatingtemperature range of 45% and 15%, respectively.
The SHDN input will ignore low-going pulses (pulsesmeant to shut down the LDO) that are up to 400 ns inpulse width. If the shutdown input is pulled low for morethan 400 ns, the LDO will enter Shutdown mode. Thissmall bit of filtering helps to reject any system noisespikes on the shutdown input signal.
TPG
TVDET_PWRG
VPWRGD_TH
VOUT
PWRGD
VOL
VOH
VIN
SHDN
VOUT
30 s70 s
TOR
PWRGD
TPG
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MCP1825/MCP1825S
On the rising edge of the SHDN input, the shutdowncircuitry has a 30 s delay before allowing the LDOoutput to turn on. This delay helps to reject any falseturn-on signals or noise on the SHDN input signal. After the 30 s delay, the LDO output enters its soft-startperiod as it rises from 0V to its final regulation value. If the SHDN input signal is pulled low during the 30 s
delay period, the timer will be reset and the delay timewill start over again on the next rising edge of theSHDN input. The total time from the SHDN input goinghigh (turn-on) to the LDO output being in regulation istypically 100 s. See Figure 4-4 for a timing diagram of the SHDN input.
FIGURE 4-4: Shutdown Input Timing Diagram.
4.7 Dropout Voltage andUndervoltage Lockout
Dropout voltage is defined as the input-to-outputvoltage differential at which the output voltage drops2% below the nominal value that was measured with aVR + 0.5V differential applied. The MCP1825/
MCP1825S LDO has a very low dropout voltagespecification of 210 mV (typical) at 500 mA of outputcurrent. See Section 1.0 Electrical Characteristicsfor maximum dropout voltage specifications.
The MCP1825/MCP1825S LDO operates across aninput voltage range of 2.1V to 6.0V and incorporatesinput Undervoltage Lockout (UVLO) circuitry thatkeeps the LDO output voltage off until the input voltagereaches a minimum of 2.00V (typical) on the risingedge of the input voltage. As the input voltage falls, theLDO output will remain on until the input voltage levelreaches 1.82V (typical).
Since the MCP1825/MCP1825S LDO undervoltage
lockout activates at 1.82V as the input voltage is falling,the dropout voltage specification does not apply for output voltages that are less than 1.8V.
For high-current applications, voltage drops across thePCB traces must be taken into account. The traceresistances can cause significant voltage dropsbetween the input voltage source and the LDO. For applications with input voltages near 2.1V, these PCBtrace voltage drops can sometimes lower the inputvoltage enough to trigger a shutdown due toundervoltage lockout.
4.8 Overtemperature Protection
The MCP1825/MCP1825S LDO has temperature-sensing circuitry to prevent the junction temperaturefrom exceeding approximately 150 C. If the LDO
junction temperature does reach 150 C, the LDOoutput will be turned off until the junction temperaturecools to approximately 140 C, at which point the LDOoutput will automatically resume normal operation. If the internal power dissipation continues to beexcessive, the device will again shut off. The junctiontemperature of the die is a function of power dissipation, ambient temperature and package thermalresistance. See Section 5.0 Application Circuits/Issues for more information on LDO power dissipation and junction temperature.
SHDN
VOUT
30 s 70 s
TOR400 ns (typ)
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MCP1825/MCP1825S
DS22056A-page 20 2007 Microchip Technology Inc.
5.0 APPLICATION CIRCUITS/ISSUES
5.1 Typical Application
The MCP1825/MCP1825S is used for applications thatrequire high LDO output current and a power goodoutput.
FIGURE 5-1: Typical Application Circuit.
5.1.1 APPLICATION CONDITIONS
5.2 Power Calculations
5.2.1 POWER DISSIPATIONThe internal power dissipation within the MCP1825/MCP1825S is a function of input voltage, outputvoltage, output current and quiescent current.Equation 5-1 can be used to calculate the internalpower dissipation for the LDO.
EQUATION 5-1:
In addition to the LDO pass element power dissipation,there is power dissipation within the MCP1825/MCP1825S as a result of quiescent or ground current.The power dissipation as a result of the ground currentcan be calculated using the following equation:
EQUATION 5-2:
The total power dissipated within the MCP1825/MCP1825S is the sum of the power dissipated in theLDO pass device and the P(I GND ) term. Because of the
CMOS construction, the typical I GND for the MCP1825/MCP1825S is 120 A. Operating at a maximum V IN of 3.465V results in a power dissipation of 0.12 milli-Wattsfor a 2.5V output. For most applications, this is smallcompared to the LDO pass device power dissipationand can be neglected.
The maximum continuous operating junctiontemperature specified for the MCP1825/MCP1825S is+125C . To estimate the internal junction temperatureof the MCP1825/MCP1825S, the total internal power dissipation is multiplied by the thermal resistance from
junction to ambient (R JA ) of the device. The thermalresistance from junction to ambient for the TO-220-5package is estimated at 29.3 C/W.
EQUATION 5-3:
Package Type = TO-220-5
Input Voltage Range = 3.3V 5%
VIN maximum = 3.465V
VIN minimum = 3.135V
VDROPOUT (max) = 0.350V
VOUT (typical) = 2.5V
IOUT = 500 mA maximum
P DISS (typical) = 0.483W
Temperature Rise = 14.2C
10 F
VOUT = 2.5V @ 500 mA
R1C210 k
PWRGD
SHDN
GND
2
4.7 F
OnOff
C1
MCP1825-2.5
1 3 4 5
3.3V VIN
P LDO
V IN MAX )( ) V OUT MIN ( ) ( ) I OUT MAX )( )=
Where:
P LDO = LDO Pass device internalpower dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
P I GND( ) V IN MAX ( ) I VI N =Where:
P I(GND = Power dissipation due to thequiescent current of the LDO
VIN(MAX) = Maximum input voltage
IVIN = Current flowing in the V IN pinwith no LDO output current(LDO quiescent current)
T J MAX ( ) P TOTAL R JA T AMAX +=
TJ(MAX) = Maximum continuous junctiontemperature
P TOTAL = Total device power dissipation
RJA = Thermal resistance from junction toambient
TAMAX = Maximum ambient temperature
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2007 Microchip Technology Inc. DS22056A-page 21
MCP1825/MCP1825S
The maximum power dissipation capability for apackage can be calculated given the junction-to-ambient thermal resistance and the maximum ambienttemperature for the application. Equation 5-4 can beused to determine the package maximum internalpower dissipation.
EQUATION 5-4:
EQUATION 5-5:
EQUATION 5-6:
5.3 Typical Application
Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipationis calculated in the following example. The power dissi-pation as a result of ground current is small enough tobe neglected.
5.3.1 POWER DISSIPATION EXAMPLE
5.3.1.1 Device Junction Temperature RiseThe internal junction temperature rise is a function of internal power dissipation and the thermal resistancefrom junction-to-ambient for the application. Thethermal resistance from junction-to-ambient (R JA ) isderived from EIA/JEDEC standards for measuringthermal resistance. The EIA/JEDEC specification isJESD51. The standard describes the test method andboard specifications for measuring the thermalresistance from junction to ambient. The actual thermalresistance for a particular application can varydepending on many factors such as copper area andthickness. Refer to AN792, A Method to DetermineHow Much Power a SOT23 Can Dissipate in an Appli-cation (DS00792), for more information regarding thissubject.
P D MAX ( )T J MAX ( ) T A MAX ( ) ( )
R JA---------------------------------------------------=
P D(MAX) = Maximum device power dissipation
TJ(MAX) = maximum continuous junctiontemperature
TA(MAX) = maximum ambient temperature
RJA = Thermal resistance from junction-to-ambient
T J RISE ( ) P D MAX ( ) R JA=
TJ(RISE) = Rise in device junction temperatureover the ambient temperature
P D(MAX) = Maximum device power dissipation
RJA = Thermal resistance from junction-to-ambient
T J T J RISE ( ) T A+=
TJ = Junction temperatureTJ(RISE) = Rise in device junction temperature
over the ambient temperature
TA = Ambient temperature
Package
Package Type = TO-220-5
Input Voltage
VIN = 3.3V 5%
LDO Output Voltage and Current
VOUT = 2.5V
IOUT = 500 mA
Maximum Ambient Temperature
TA(MAX) = 60C
Internal Power DissipationP LDO(MAX) = (VIN(MAX) V OUT(MIN) ) x IOUT(MAX)
P LDO = ((3.3V x 1.05) (2.5V x 0.975))x 500 mA
P LDO = 0.514 Watts
TJ(RISE) = P TOTAL x R JATJRISE = 0.514 W x 29.3 C/W
TJRISE = 15.06C
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MCP1825/MCP1825S
DS22056A-page 22 2007 Microchip Technology Inc.
5.3.1.2 Junction Temperature EstimateTo estimate the internal junction temperature, thecalculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case
junction temperature is estimated below:
5.3.1.3 Maximum Package Power Dissipation at 60C AmbientTemperature
From this table, you can see the difference in maximumallowable power dissipation between the TO-220-5package and the DDPAK-5 package.
TJ = TJRISE + TA(MAX)TJ = 15.06C + 60.0C
TJ = 75.06C
TO-220-5 (29.3C/W R JA ):P D(MAX) = (125C 60C) / 29.3C/W
P D(MAX) = 2.218W
DDPAK-5 (31.2C/Watt R JA ):P D(MAX) = (125C 60C)/ 31.2C/W
P D(MAX) = 2.083W
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2007 Microchip Technology Inc. DS22056A-page 23
MCP1825/MCP1825S
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
Legend: XX...X Customer-specific informationY Year code (last digit of calendar year)YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week 01)NNN Alphanumeric traceability codePb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( )can be found on the outer packaging for this package.
Note : In the event the full Microchip part number cannot be marked on one line, it willbe carried over to the next line, thus limiting the number of availablecharacters for customer-specific information.
3e
3e
Example:3-Lead DDPAK (MCP1825S)
3-Lead TO-220 (MCP1825S)
1 2 3
1 2 3
XXXXXXXXXXXXXXXXXXYYWWNNN
XXXXXXXXXXXXXXXXXX
YYWWNNN
1 2 3
MCP1825S0.8EEB^^0710256
1 2 3
MCP1825S12EAB^^
0710256
Example:
3e
3e
3-Lead SOT-223 (MCP1825S)
XXXXXXXXXXYYWW
NNN
Example:
182508EDB0710
256
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MCP1825/MCP1825S
DS22056A-page 24 2007 Microchip Technology Inc.
Package Marking Information (Continued)
Legend: XX...X Customer-specific informationY Year code (last digit of calendar year)YY Year code (last 2 digits of calendar year)WW Week code (week of January 1 is week 01)NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)* This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note : In the event the full Microchip part number cannot be marked on one line, it willbe carried over to the next line, thus limiting the number of availablecharacters for customer-specific information.
3e
3e
5-Lead DDPAK (MCP1825)
5-Lead TO-220 (MCP1825)
1 2 3 4 5
1 2 3 4 5
XXXXXXXXXXXXXXXXXXYYWWNNN
XXXXXXXXXXXXXXXXXX
YYWWNNN
1 2 3 4 5
MCP18251.0EET^^0710256
1 2 3 4 5
MCP182508EAT^^
0710256
Example:
Example:
3e
3e
5-Lead SOT-223 (MCP1825)
XXXXXXXXXXYYWW
NNN
Example:
1825-08EDC0710
256
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2007 Microchip Technology Inc. DS22056A-page 25
MCP1825/MCP1825S
3-Lead Plastic (EB) [DDPAK]
Notes:1. Significant Characteristic.2. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.3. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located athttp://www.microchip.com/packaging
Units INCHESDimension Limits MIN NOM MAX
Number of Pins N 3Pitch e .100 BSCOverall Height A .160 .190Standoff A1 .000 .010Overall Width E .380 .420Exposed Pad Width E1 .245 Molded Package Length D .330 .380Overall Length H .549 .625Exposed Pad Length D1 .270 Lead Thickness c .014 .029Pad Thickness C2 .045 .065Lower Lead Width b .020 .039Upper Lead Width b1 .045 .070Foot Length L .068 .110Pad Length L1 .067
Foot Angle 0 8
E E1
H
L1
D
D1
N1
eb
b1
c
C2
L
A
A1
BOTTOM VIEW
TOP VIEW
CHAMFER
OPTIONAL
Microchip Technology Drawing C04-011B
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MCP1825/MCP1825S
DS22056A-page 26 2007 Microchip Technology Inc.
3-Lead Plastic Small Outline Transistor (DB) [SOT-223]
Notes:1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located athttp://www.microchip.com/packaging
Units MILLIMETERSDimension Limits MIN NOM MAX
Number of Leads N 3Lead Pitch e 2.30 BSCOutside Lead Pitch e1 4.60 BSCOverall Height A 1.80Standoff A1 0.02 0.10Molded Package Height A2 1.50 1.60 1.70Overall Width E 6.70 7.00 7.30Molded Package Width E1 3.30 3.50 3.70Overall Length D 6.30 6.50 6.70Lead Thickness c 0.23 0.30 0.35Lead Width b 0.60 0.76 0.84Tab Lead Width b2 2.90 3.00 3.10Foot Length L 0.75 Lead Angle 0 10
D
b2
EE1
1 2 3
e
e 1
A A2
A1b
c
L
Microchip Technology Drawing C04-032B
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2007 Microchip Technology Inc. DS22056A-page 27
MCP1825/MCP1825S
3-Lead Plastic Transistor Outline (AB) [TO-220]
Notes:1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located athttp://www.microchip.com/packaging
Units INCHESDimension Limits MIN NOM MAX
Number of Pins N 3Pitch e .100 BSCOverall Pin Pitch e1 .200 BSC
Overall Height A .140 .190Tab Thickness A1 .020 .055Base to Lead A2 .080 .115Overall Width E .357 .420Mounting Hole Center Q .100 .120Overall Length D .560 .650Molded Package Length D1 .330 .355Tab Length H1 .230 .270Mounting Hole Diameter P .139 .156Lead Length L .500 .580Lead Shoulder L1 .250Lead Thickness c .012 .024Lead Width b .015 .027 .040
Shoulder Width b2 .045 .057 .070
E
Q
D
D1
L1
L
1 2
e
e 1
b
b2
N
A2
c
H1
A1
A
P
CHAMFER
OPTIONAL
Microchip Technology Drawing C04-034B
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MCP1825/MCP1825S
DS22056A-page 28 2007 Microchip Technology Inc.
5-Lead Plastic (ET) [DDPAK]
Notes:1. Significant Characteristic.2. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.3. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located athttp://www.microchip.com/packaging
Units INCHESDimension Limits MIN NOM MAX
Number of Pins N 5Pitch e .067 BSCOverall Height A .160 .190Standoff A1 .000 .010Overall Width E .380 .420Exposed Pad Width E1 .245 Molded Package Length D .330 .380Overall Length H .549 .625Exposed Pad Length D1 .270 Lead Thickness c .014 .029Pad Thickness C2 .045 .065Lead Width b .020 .039Foot Length L .068 .110Pad Length L1 .067Foot Angle 0 8
E
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Microchip Technology Drawing C04-012B
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2007 Microchip Technology Inc. DS22056A-page 29
MCP1825/MCP1825S
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MCP1825/MCP1825S
DS22056A-page 30 2007 Microchip Technology Inc.
5-Lead Plastic Transistor Outline (AT) [TO-220]
Notes:1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located athttp://www.microchip.com/packaging
Units INCHESDimension Limits MIN NOM MAX
Number of Pins N 5Pitch e .067 BSCOverall Pin Pitch e1 .268 BSCOverall Height A .140 .190Overall Width E .380 .420Overall Length D .560 .650Molded Package Length D1 .330 .355Tab Length H1 .204 .293Tab Thickness A1 .020 .055Mounting Hole Center Q .100 .120Mounting Hole Diameter P .139 .156Lead Length L .482 .590Base to Bottom of Lead A2 .080 .115Lead Thickness c .012 .025Lead Width b .015 .027 .040
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Microchip Technology Drawing C04-036B
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2007 Microchip Technology Inc. DS22056A-page 31
MCP1825/MCP1825S
APPENDIX A: REVISION HISTORY
Revision A (August 2007)
Original Release of this Document.
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MCP1825/MCP1825S
DS22056A-page 32 2007 Microchip Technology Inc.
NOTES:
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2007 Microchip Technology Inc. DS22056A-page 33
MCP1825/MCP1825S
PRODUCT IDENTIFICATION SYSTEMTo order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office .
Device: MCP1825: 500 mA Low Dropout Regulator MCP1825T: 500 mA Low Dropout Regulator
Tape and ReelMCP1825S: 500 mA Low Dropout Regulator MCP1825ST: 500 mA Low Dropout Regulator
Tape and Reel
Output Voltage *: 08 = 0.8V Standard12 = 1.2V Standard18 = 1.8V Standard25 = 2.5V Standard30 = 3.0V Standard33 = 3.3V Standard50 = 5.0V StandardADJ = Adjustable Output Voltage ** (MCP1825 Only)
*Contact factory for other output voltage options** When ADJ is used, the extra feature code and
tolerance columns do not apply. Refer to examples.
Extra Feature Code: 0 = Fixed
Tolerance: 2 = 2.0% (Standard)
Temperature: E = -40 C to +125 C
Package Type: AB = Plastic Transis tor Out line , TO-220, 3-leadAT = Plastic Transistor Outline, TO-220, 5-leadEB = Plastic, DDPAK, 3-leadET = Plastic, DDPAK, 5-leadDB = Plastic Small Transistor Outline, SOT-223, 3-leadDC = Plastic Small Transistor Outline, SOT-223, 5-lead
Note: ADJ (Adjustable) only available in 5-lead version.
PART NO. XXX
Output FeatureCode
DeviceVoltage
X
Tolerance
X/
Temp.
XX
Package
Examples:
a) MCP1825-0802E/XX: 0.8V LDO Regulator b) MCP1825-1002E/XX: 1.0V LDO Regulator c) MCP1825-1202E/XX: 1.2V LDO Regulator d) MCP1825-1802E/XX: 1.8V LDO Regulator e) MCP1825-2502E/XX: 2.5V LDO Regulator f) MCP1825-3002E/XX: 3.0V LDO Regulator g) MCP1825-3302E/XX: 3.3V LDO Regulator h) MCP1825-5002E/XX: 5.0V LDO Regulator i ) MCP1825-ADJE/XX: ADJ LDO Regulator
a) MCP1825S-0802E/XX:0.8V LDO Regulator b) MCP1825S-0802E/XX:0.8V LDO Regulator c) MCP1825S-1002E/XX:1.0V LDO Regulator d) MCP1825S-1202E/XX:1.2V LDO Regulator e) MCP1825S-1802E/XX:1.8V LDO Regulator f) MCP1825S-2502E/XX:2.5V LDO Regulator g) MCP1825S-2502E/XX:3.0V LDO Regulator
h) MCP1825S-3302E/XX:3.3V LDO Regulator i) MCP1825S-5002E/XX:5.0V LDO Regulator
XX = AB for 3LD TO-220 package= AT for 5LD TO-220 package= DB for 3LD SOT-223 package= DC for 5LD SOT-223 package= EB for 3LD DDPAK package= ET for 5LD DDPAK package
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MCP1825/MCP1825S
DS22056A-page 34 2007 Microchip Technology Inc.
NOTES:
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2007 Microchip Technology Inc. DS22056A-page 35
Information contained in this publication regarding deviceapplications and the like is provided only for your convenienceand may be superseded by updates. It is your responsibility toensure that your application meets with your specifications.MICROCHIP MAKES NO REPRESENTATIONS ORWARRANTIES OF ANY KIND WHETHER EXPRESS ORIMPLIED, WRITTEN OR ORAL, STATUTORY OROTHERWISE, RELATED TO THE INFORMATION,INCLUDING BUT NOT LIMITED TO ITS CONDITION,QUALITY, PERFORMANCE, MERCHANTABILITY ORFITNESS FOR PURPOSE . Microchip disclaims all liabilityarising from this information and its use. Use of Microchipdevices in life support and/or safety applications is entirely atthe buyers risk, and the buyer agrees to defend, indemnify andhold harmless Microchip from any and all damages, claims,suits, or expenses resulting from such use. No licenses areconveyed, implicitly or otherwise, under any Microchipintellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,dsPIC, K EE LOQ , KEE LOQ logo, micro ID , MPLAB, PIC,PICmicro, PICSTART, PRO MATE, rfPIC and SmartShunt areregistered trademarks of Microchip Technology Incorporatedin the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, MigratableMemory, MXDEV, MXLAB, SEEVAL, SmartSensor and TheEmbedded Control Solutions Company are registeredtrademarks of Microchip Technology Incorporated in theU.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, SelectMode, Smart Serial, SmartTel, Total Endurance, UNI/O,WiperLock and ZENA are trademarks of MicrochipTechnology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporatedin the U.S.A.
All other trademarks mentioned herein are property of their respective companies.
2007, Microchip Technology Incorporated, Printed in theU.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in theintended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchips DataSheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does notmean that we are guaranteeing the product as unbreakable.
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchips code protection feature may be a violation of the Digital Millennium Copyright Act. If such actsallow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 certification for its worldwideheadquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in Californiaand India. The Companys quality system processes and proceduresare for its PIC MCUs and dsPIC DSCs, K EE LOQ code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchips quality system for the designand manufacture of development systems is ISO 9001:2000 certified.
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