6th Trento Workshop on Advanced Silicon Radiation Detectors 1/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
J.P. Balbuena, G. Pellegrini, R. Bates, C. Fleta, M. Lozano, M. Ullán
Semiconductor radiation detectors groupInstitut de Microelectrònica de Barcelona
Centre Nacional de Microelectrònica - CSICSpain
3rd March 2011
Simulations of 3D-DDTCSilicon detectors
Simulations of 3D-DDTCSilicon detectors
6th Trento Workshop on Advanced Silicon Radiation Detectors 2/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Blocks Columns Increments Transitions Hypertext
11 Motivation
22 Simulation: Layout and parameters
33 Simulation: Electric field
44 Simulation: Charge multiplication
55 Conclusions/Future work
6th Trento Workshop on Advanced Silicon Radiation Detectors 3/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Blocks Columns Increments Transitions Hypertext
11 Motivation
22 Simulation: Layout and parameters
33 Simulation: Electric field
44 Simulation: Charge multiplication
55 Conclusions/Future work
6th Trento Workshop on Advanced Silicon Radiation Detectors 4/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
3D-DDTC measurementsIrradiated 3D detectors present Charge multiplication effect:
ObjectiveDevelop 3D detectors with Charge multiplication effect for low Bias voltages before irradiation by changing the bulk doping concentration.
above 150V for p-type above 260V for n-type
[M. Köhler, University of Freiburg, Germany]
6th Trento Workshop on Advanced Silicon Radiation Detectors 5/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Blocks Columns Increments Transitions Hypertext
11 Motivation
22 Simulation: Layout and parameters
33 Simulation: Electric field
44 Simulation: Charge multiplication
55 Conclusions/Future work
6th Trento Workshop on Advanced Silicon Radiation Detectors 6/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Geometry- pitch: 80 µm- wafer thickness: 285 µm- column depth: 250 µm- column diameter: 10 µm
Doping levels- n+ columns: 1019 cm-3
- p+ columns: 1019 cm-3
- p-stop: 1018 cm-3
- Si/SiO2 charge: 5·1011 cm-2
P-type
p+ p+
p+ p+
n+
6th Trento Workshop on Advanced Silicon Radiation Detectors 7/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Geometry- pitch: 80 µm- wafer thickness: 285 µm- column depth: 250 µm- column diameter: 10 µm
Doping levels- n+ columns: 1019 cm-3
- p+ columns: 1019 cm-3
- Si/SiO2 charge: 5·1011 cm-2
N-type
n+ n+
n+ n+
p+
6th Trento Workshop on Advanced Silicon Radiation Detectors 8/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Physics ModelMobility Doping dependance, High Electric field
saturation
Generation and Recombination Doping dependant Shockley-Read-Hall Generation recombination, Surface recombination model
Impact ionization University of Bologna impact ionization model
Tunneling Band-to-band tunneling, Hurkx trap-assisted tunneling
Oxide physics Oxide as a wide band gap semiconductor for mips (irradiated), interface charge accumulation
Radiation model Acceptor/Donor states in the band gap (traps)
[M. Benoit, Laboratoire de l’accélérateur linéar (LAL), Orsay, France]
6th Trento Workshop on Advanced Silicon Radiation Detectors 9/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Blocks Columns Increments Transitions Hypertext
11 Motivation
22 Simulation: Layout and parameters
33 Simulation: Electric field
44 Simulation: Charge multiplication
55 Conclusions/Future work
6th Trento Workshop on Advanced Silicon Radiation Detectors 10/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Electric Field (p-type)
0 10 20 30 40 50 600
2
4
6
8
10
12
14
16
18
Ele
ctric
Fie
ld (
V/µ
m)
Distance (µm)
1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm
Cut at z = 142,5 µm for Vbias
= 150 V
n+
p+
0 50 100 150 200 250 30002468
101214161820222426
Ele
ctric
Fie
ld (
V/µ
m)
Reverse Bias (V)
1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm
Cut at z = 35 µm
0 50 100 150 200 250 30002468
101214161820222426
Ele
ctric
Fie
ld (
V/µ
m)
Reverse Bias (V)
1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm
Cut at z = 142,5 µm
0 50 100 150 200 250 3000
5
10
15
20
25
30
35
Ele
ctric
Fie
ld (
V/µ
m)
Reverse Bias (V)
1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm
Cut at z = 250 µm
6th Trento Workshop on Advanced Silicon Radiation Detectors 11/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Electric Field (n-type)
0 10 20 30 40 50 600
2
4
6
8
10
12
14
16
1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm
Ele
ctric
Fie
ld (
V/µ
m)
Distance (µm)
Cut at z = 142,5 µm for Vbias
= 150 V
n+
p+
0 50 100 150 200 250 30002468
101214161820222426
Ele
ctric
Fie
ld (
V/µ
m)
Reverse Bias (V)
1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm
Cut at z = 35 µm
0 50 100 150 200 250 30002468
101214161820222426
Ele
ctric
Fie
ld (
V/µ
m)
Reverse Bias (V)
1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm
Cut at z = 142,5 µm
0 50 100 150 200 250 30002468
10121416182022242628303234363840
Ele
ctric
Fie
ld (
V/µ
m)
Reverse Bias (V)
1000 ·cm 500 ·cm 300 ·cm 200 ·cm 100 ·cm 50 ·cm
Cut at z = 250 µm
6th Trento Workshop on Advanced Silicon Radiation Detectors 12/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Using PowerPointto Typeset Nice Presentations
Blocks Columns Increments Transitions Hypertext
11 Motivation
22 Simulation: Layout and parameters
33 Simulation: Electric field
44 Simulation: Charge multiplication
55 Conclusions/Future work
6th Trento Workshop on Advanced Silicon Radiation Detectors 13/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
0 200 400 600 800 10000
100
200
300
Vol
tage
(V
)
Resistivity (·cm)
VFD
p-type
V (Emax
~ 14 V/µm) p-type
VFD
n-type
V (Emax
~ 14 V/µm) n-type
Charge multiplication
Compromise between low full depletion voltages and high enough voltages for Charge multiplication
0 100 200 300 400 500 600
16000
20000
24000
28000
32000
36000
40000
Cha
rge
Col
lect
ed (
elec
tron
s)
Resistivity (·cm)
p-type (Vbias
=200V)
n-type (Vbias
=100V)
V = 150 V for both n and p-type
ρn = 100 Ω·cm ρp = 200 Ω·cm
MIP 22800 electrons
Charge multiplication
6th Trento Workshop on Advanced Silicon Radiation Detectors 14/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Charge multiplication in the irradiated 3D model
Doping concentration: Neff = 7·1011 cm-3 (p-type)
Fluence: Φeq = 2·1015 neq/cm2
0 10 20 30 40 50 600
2
4
6
8
10
12
14
Vbias
= 200 V
Vbias
= 250 V
Ele
ctric
fie
ld (
V/µ
m)
Distance (µm)
0 100 200 300
16000
18000
20000
22000
24000
26000
28000
30000
Cha
rge
Col
lect
ed (
elec
tron
s)
Bias voltage (V)
eq
= 2 x 1015 n/cm2
Electric field compatible with Charge multiplication for 250V
Unexpected reduction of the charge collected for 250V !!
0 50 100 150 200 250 3004x10-10
5x10-10
6x10-10
7x10-10
8x10-10
9x10-10
10-9
Leak
age
curr
ent
(A)
Bias voltage (V)
Qox
= 5·1011 cm-2
Qox
= 1012 cm-2
Qox
= 2·1012 cm-2
Qox
= 3·1012 cm-2
Interface charge: Qox = 5·1011 cm-2
6th Trento Workshop on Advanced Silicon Radiation Detectors 15/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Using PowerPointto Typeset Nice Presentations
Blocks Columns Increments Transitions Hypertext
11 Motivation
22 Simulation: Layout and parameters
33 Simulation: Electric field
44 Simulation: Charge multiplication
55 Conclusions/Future work
6th Trento Workshop on Advanced Silicon Radiation Detectors 16/16
J.P. Balbuena Instituto de Microelectrónica de Barcelona IMB-CNM (CSIC)
Conclusions
Future work
Obtained charge multiplication effect in both n and p-type substrates without irradiation
Complete the study on multiplication effect for different doping levels at different biasing voltages
Solve problems of charge multiplication in the irradiated 3D model.
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