SG46/DRev. 265/2004
Wireless RF Product.
Freescale Semiconductor Selector Guide.
1FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
Wireless RF ProductSelector Guide
Offering a broad portfolio of RF products, Freescale Semicon-ductor serves both the wireless infrastructure and subscribermarkets. Freescale RF Solutions is the leader in RF technolo-gy�today AND tomorrow�and is the answer for developerswho are creating innovative new products to meet theircustomers� need for wireless connections.(1) Freescale pio-neered RF technology and continues to drive future innova-tions, delivering significantly higher measurable performanceover our competitors�in most cases, 15 to 30 percent.Freescale RF Solutions supports developers through un-equaled integration, high terminal impedance, the mostcomprehensive RF toolkit in the industry, and access to ourglobal support team. Freescale is committed to the develop-ment of new products and expansion of our product offeringsto meet the increasing global demands of ISM band andpersonal communications systems, including cellular phone,broadband data, TV broadcast, land mobile and CATVsystems.
How to Use This Selector GuideThe RF Monolithic Integrated Circuits and the RF/IFIntegrated Circuits products in this guide are divided intothree major functional categories: RF Front End ICs, RF/IFSubsystem ICs and Frequency Synthesis. Each of thesecategories is further subdivided based on circuit functional-ity. This structure differentiates highly integrated subsystemICs from fundamental circuit building blocks and discretetransistors.
The Power LDMOS Transistors, Power GaAs Transistors,Power Amplifier ICs and Modules, General Purpose LinearAmplifier Modules and CATV Distribution Amplifier Modulesare FIRST divided into major categories by frequency band.SECOND, within each category, parts are listed by powerlevel. THIRD, within a frequency band, transistors are furthergrouped by operating voltage and, finally, output power.Applications AssistanceApplications assistance is only a phone call away � call thenearest Freescale Semiconductor Sales office or1-800-521-6274.Access Data On-Line!Use the Internet to access semiconductor product data ath t t p : / / w w w. m o t o r o l a . c o m / s e m i c o n d u c t o r s o rhttp://www.motorola.com/rf.T h i s w e b s i t e p r o v i d e s y o u w i t h i n s t a n t a c c e s s t oparametric search, part number search, product summarypages, data sheets, selector guide information, applicationinformation, design tools, package outl ines, on - l inetechnical support and much more.
Freescale Semiconductor, Inc. 2004
(1) The Semiconductor Products sector of Motorola, Inc. became FreescaleSemiconductor, Inc. in 2004.
Table of ContentsPage
On-Line Access to Freescale Semiconductor Data 3. . . . . Design Tools and Data 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Product Indices 99. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF Front End ICs 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RFICs 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Downconverters 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Amplifiers 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Building Blocks 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Amplifiers 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Packages 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF/IF Subsystems 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tranceivers 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Miscellaneous Functions 10. . . . . . . . . . . . . . . . . . . . . . . .
ADCs/DACs 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Encoders/Decoders 10. . . . . . . . . . . . . . . . . . . . . . . . .
Packages 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Synthesis 13. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single PLL Synthesizers 14. . . . . . . . . . . . . . . . . . . . . . . . Packages 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Transistors 15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF High Power LDMOS Transistors 16. . . . . . . . . . . . . .
Mobile - To 520 MHz 16. . . . . . . . . . . . . . . . . . . . . . . . TV Broadcast - To 1000 MHz 16. . . . . . . . . . . . . . . . . Cellular - To 1000 MHz 17. . . . . . . . . . . . . . . . . . . . . . PCS and 3G - To 2100 MHz 18. . . . . . . . . . . . . . . . . . MMDS - To 2600 MHz 18. . . . . . . . . . . . . . . . . . . . . . .
RF Power GaAs Transistors 21. . . . . . . . . . . . . . . . . . . . . 3.5 GHz - Linear Transistors 21. . . . . . . . . . . . . . . . .
RF Low Power Transistors 22. . . . . . . . . . . . . . . . . . . . . . RF High Power Amplifier Line-ups 23. . . . . . . . . . . . . . . Packages 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Amplifier ICs and Modules 33. . . . . . . . . . . . . . . . . . . . . Base Stations 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Packages 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF General Purpose Linear Amplifier Modules 37. . . . . . . RF General Purpose Linear Amplifier Modules 38. . . . . Packages 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CATV Distribution Amplifier Modules 41. . . . . . . . . . . . . . . . Forward Amplifier Modules 42. . . . . . . . . . . . . . . . . . . . . . Reverse Amplifier Modules 45. . . . . . . . . . . . . . . . . . . . . . Packages 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FREESCALE SEMICONDUCTOR 2
WIRELESS RF PRODUCTSELECTOR GUIDE
Wireless RF ProductSelector Guide
Table of Contents - continuedPage
Tape and Reel Specifications 49. . . . . . . . . . . . . . . . . . . . . . Applications and Product Literature 57. . . . . . . . . . . . . . . . . Case Dimensions 59. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Product Indices 99. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Selector Guide Product Index 99. . . . . . . . . . . . . . . . . . . End of Life Product Index 103. . . . . . . . . . . . . . . . . . . . . . After Market Support Index 106. . . . . . . . . . . . . . . . . . . . .
3FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
ACCESS DATA ON-LINE!Available online are Part Number Search, Parametric
Search, the Product Library, Documentation Library, ToolsLibrary, Application sites, Product sites, TechnicalHelpline, Technical Training and Where to Buy at thefollowing URL: http://www.motorola.com/semiconductors.
See the RF and IF Design Resource site athttp://www.motorola.com/rf for specific Wireless RFProduct support information for:
• Data sheets
• Applications notes
• Selector guides
• Packaging information
• Application information
• Models
• Reference designs
• Reference design simulations
• Circuit board artwork
• Roadmaps
• Press releases
• Events
Design Tools and Data Available On-linefor Your Design-in Process
RF Reference DesignsRF Power Reference Designs provide:
• RF Performance Tuned for Specific StandardBroadcast Formats
• Low Cost Component Selection
• Complete BOM, Layout, PCB and All Design Infor-mation Available
• Integral Temperature Compensated Bias CircuitsIncluded
• Extensive RF Characterizations
Motorola is pleased to offer application-specificreference designs. These application-specificreference designs show some of the many possibleuses of our high power RF transistors. They provide thecustomer�s design engineers with a fast and accuratetool to both evaluate the performance envelope and fullycharacterize the devices under a variety of differentoperating conditions.
Low-cost component selection was chosen so thatthe end users could transition the design and its entire
Bill of Materials into a high volume base stationmanufacturing process and still be cost competitive withother competing technologies.
The circuit board is made of a recently developedceramic loaded thermoset plastic woven glass materialthat offers very low material costs, low PCB fabricationcost, and yet still has an exceptionally low dissipationfactor giving low RF loss. The dielectric constant of thismaterial is high enough to allow for compact, distributedelement matching structures, yet of a reasonable valueto make it relatively insensitive to fabrication andetching variations.
The circuit�s matching and decoupling capacitorsutilize a low-cost silicon dioxide dielectric processrather than the traditional porcelain multi - layeredassemblies, and they offer low ESRs, very high Q�s andtight capacitance value tolerances.
The reference design data sheet contains a wealthof information that customers can use to betterunderstand the range and capabilities of the FreescaleSemiconductor devices. Included on the data sheet aresuch basics as the intended end use application (GSM,W-CDMA, etc.), the typical performance level expected(2% EVM, -40 dBc ACP, etc.) and some device featuressuch as ESD protection and good thermal stability. Formore information, go to http://www.motorola.com/rf andselect Tools//Reference Designs.
RF LDMOS ModelsMotorola continues to populate its LDMOS Model
Library with the LDMOS MET models and with theLDMOS Root models. All product models available inthe RF LDMOS Model Library (Root and MET) includepackage, bond wire and internal matching networkeffects.
The MET model for RF LDMOS transistors is anonlinear model that examines both electrical andthermal phenomena and can account for dynamicself -heating effects of device performance. It isspecifically tailored to model high power RF LDMOStransistors used in wireless base station applications.
Implemented in the Agilent EEsof EDAAdvanced Design System, APLAC Analog DesignTool, Applied Wave Research Microwave Office,Ansoft Serenade Design Environment andEagleware GENESYS Microwave and RF DesignSuite, the MET LDMOS model is capable of performingsmall-signal, large-signal, harmonic-balance, noiseand transient simulations. Because of its ability tosimulate self -heating effects, the MET model is moreaccurate than existing models, enabling circuit designersto predict prototype performance more accurately andreduce design cycle time.
FREESCALE SEMICONDUCTOR 4
WIRELESS RF PRODUCTSELECTOR GUIDE
The current release of the MET LDMOS model isavailable for these tools:
• Agilent EEsof ADS (UNIX and PC) nonlinear cir-cuit simulator
• APLAC Analog Design Tool
• Applied Wave Research Microwave Office
• Ansoft Serenade Design Environment
• Eagleware GENESYS Microwave and RF DesignSuite
The LDMOS Model Library is available for all majorcomputer platforms supported by these simulators.
For more information and latest releasessupported, go to
http://www.motorola.com/rf/models.
RF Power Reference Design Simulations• Provides a link between Reference Designs and
MET models
• Example designs exist for a wide selection of Freescale Semiconductor RF high power devices
• Demonstrates how to design an amplifier using microwave stripline techniques in the AgilentADS environment
• Provides �real -world� tutorial on how to use nonlinear models
• Example designs for all major applications: GSM,CDMA, W-CDMA, TDMA
• Models provide examples of CW and 2- tone signalsimulation
• Simulation files are provided royalty- free to allowfor reuse and adaptation
• The device selection and applications are beingcontinually updated
• Provides feedback path from customers to improveusability and accuracy of models
Reference Design Simulations
In the past, Motorola has provided application-specific reference designs that are targeted to providea pre-designed circuit suitable for a specificapplication. Additionally, Motorola has also providedmodeling tools, specifically MET models, to facilitatedesign using Computer Aided Engineering (CAE)techniques. These two pieces of the puzzle areexcellent design tools; however, they are never linked toeach other, leaving the customer to figure out the bestway to blend the two tools to their advantage. ReferenceDesign Simulations are designed to provide the linkbetween these two tools.
Tools Provided
Reference Design Simulations provide an exampleapplication of MET models in a pre-designedapplication circuit. Motorola has taken the time tocharacterize specific reference design circuits in�software form.� The simulations have been chosen torepresent a wide selection of RF devices under many ofthe major communication standards, including GSM,CDMA, W-CDMA and TDMA.
Learning Tools
Reference Design Simulations provide examples ofhow to use nonlinear models of RF transistors.Specifically, the user will also learn how to design anamplifier using microwave stripline matchingtechniques. To provide the most accurate modelingresults, each simulation provides examples for CW,2- tone and modulated signals, as applicable.
Reference Design Simulation Availability
The Reference Design Simulation circuits areavailable as downloadable Agilent ADS projects fromthe Motorola web site. These simulation files areprovided royalty- free to allow for reuse and adaptationto other application requirements.
Go to http://www.motorola.com/rf and selectTools/Software Tools/Reference Design Simulations.
Literature CentersPrinted literature can be obtained from the
Literature Centers upon request. For those items thatincur a cost, the U.S. Literature Center will acceptMaster Card and Visa.
USA/EUROPE/Locations Not Listed:
Freescale Semiconductor Literature DistributionP.O. Box 5405Denver, Colorado 80217Phone: 1-800-521-6274 or 1-480-768-2130
JAPAN:
Freescale Semiconductor Japan Ltd.SPS, Technical Information Center3-20-1, Minami-Azabu. Minato-kuTokyo 106-8573 Japan Phone: 81-3-3440-3569
ASIA/PACIFIC:
Freescale Semiconductor H.K. Ltd.Silicon Harbour Centre2 Dai King Street, Tai Po Industrial EstateTai Po, N.T., Hong KongPhone: 852-26668334
5FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF Front End ICsFreescale Semiconductor�s RF Front End integrated circuitdevices provide an integrated solution for the personalcommunications market. These devices are available inplastic 7x7 mm Module, SOT-343R, SOT-363, or QFN-32packages.
Evaluation Boards
Evaluation boards are available for RF Front End IntegratedCircuits. For a complete list of currently available boards andones in development for newly introduced product, pleasecontact your local Freescale Semiconductor Distributor orSales Office.
Table of ContentsPage
RF Front End ICs 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RFICs 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Downconverters 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Amplifiers 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Building Blocks 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Amplifiers 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Packages 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FREESCALE SEMICONDUCTOR 6
WIRELESS RF PRODUCTSELECTOR GUIDE
RF Front End ICs
RFICs
Downconverters
ProductInput Freq.
MHzLO Freq.
VdcIF Freq.(MHz)
Gain(dB)
NF(dB)
IIP3(dBm)
SupplyCurrent Packaging
SystemApplicability
MC13770(42)
(LNA)2100 to 2170 n/a n/a 15
-5.01.55.0
020
3.0 mA10 µA
1345/QFN-12
W-CDMA, PCS,PDC
MC13770(43)
(Mixer)2110 to 2170 2300 to 2360
2490 to 2550190380
10.0 8.0 -3.0 5.0 mA 1345/QFN-12
W-CDMA, PCS,PDC
Power Amplifiers
Product
Freq.RangeMHz
SupplyVolt.
RangeVdc
SaturatedPout dBm
(Typ)PAE %(Typ)
GainPout/PindB (Typ) Packaging
SystemApplicability
MMM5063 880-9151710-17851850-1910
2.7 to 5.5 35.233.834
534443
36.231.831.0
1383/7x7 mm Module
GSM900, DCS1800,PCS1900
(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.(42)In LNA section, specifications are represented in High Gain Mode first and Bypass Mode second.(43)In Mixer section, LO frequency ranges are specified for 190 MHz and 380 MHz IF.
7FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
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RF Building Blocks
Amplifiers
Product
RF Freq.RangeMHz
SupplyVolt.
RangeVdc
SupplyCurrent
mA(Typ)
StandbyCurrentµA (Typ)
SmallSignal
Gain dB(Typ)
OutputIP3 dBm
(Typ)
NFdB
(Typ) PackagingSystem
Applicability
MBC13720(18c) 400 to 2500 2.5 to 3.0 9.0 <20 14.5 @1900 MHz
24.5 @1900 MHz
1.38 @1900 MHz
419B/SOT-363
ISM900,2400, PCS,
CDMA
MBC13916(18c) 100 to 2500 2.7 to 5.0 4.7 � 19 @900 MHz
16.5 @900 MHz
0.9 @900 MHz
1404/SOT-343R
GeneralPurposeCascodeAmp forVCOs,
Buffers, &LNAs
(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.
FREESCALE SEMICONDUCTOR 8
WIRELESS RF PRODUCTSELECTOR GUIDE
RF Front End Integrated Circuit Packages
CASE 419B
(SOT−363)
CASE 1345
(QFN−12)
SCALE 1:1
CASE 1383
(7x7 Module)
CASE 1404
(SOT−343R)
9FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF/IF Subsystems
Table of ContentsPage
Tranceivers 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Miscellaneous Functions 10. . . . . . . . . . . . . . . . . . . . . . . . . .
ADCs/DACs 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Encoders/Decoders 10. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Packages 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FREESCALE SEMICONDUCTOR 10
WIRELESS RF PRODUCTSELECTOR GUIDE
RF/IF Subsystems
TranceiversSupplyCurrent
�A
Product
SupplyVoltage
V
�ATyp
@ 1% DutyCycle
Freq.BandGHz
SensitivityTypdBM
SerialInterface
Data RateSpeckbps
Comm.Protocol
SystemApplicability Pkg
MC13192(46a) 2.0-3.4 500, Idle34, TX37, RX
2.4-2.5 -92@
1% PER
SP1 250 802.15.4 ZigBee, 2.4 GHz ISM
1311/QFN-32
MC13191(46a) 2.0-3.4 500, Idle34, TX37, RX
2.4-2.5 -91@
1% PER
SP1 250 DSSS 2.4 GHz ISM 1311/QFN-32
Miscellaneous Functions
ADCs/DACs
Number of
Product Function I/O Format Resolution
Number ofAnalog
ChannelsOn-ChipOscillator Other Features
Suffix/Packaging
MC144110 DAC Serial 6 Bits 6 n/a Emitter -FollowerOutputs
DW/751D
MC144111 DAC Serial 6 Bits 4 n/a Emitter -FollowerOutputs
DW/751G
Encoders/Decoders
Product Function
Number ofAddress
LinesMaximum Numberof Address Codes
Number of DataBits Operation
Suffix/Packaging
MC145026 Encoder Depends onDecoder
Depends onDecoder
Depends onDecoder
Simplex P/648, D/751B
MC145027 Decoder 5 243 4 Simplex P/648, DW/751G
MC145028 Decoder 9 19,683 0 Simplex P/648, DW/751G
(46)To be introduced: a) 2Q04; b) 3Q04; c) 4Q04; d) 1Q05
11FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
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RF/IF Subsystems Packages
CASE 648
P SUFFIX
(DIP−16)
CASE 751D
DW SUFFIX
(SO−20L)
CASE 751B
D SUFFIX
(SO−16)
CASE 751G
DW SUFFIX
(SO−16W)
CASE 1311
(QFN−32)
FREESCALE SEMICONDUCTOR 12
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13FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
Frequency Synthesis
Table of ContentsPage
Single PLL Synthesizers 14. . . . . . . . . . . . . . . . . . . . . . . . . . Packages 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FREESCALE SEMICONDUCTOR 14
WIRELESS RF PRODUCTSELECTOR GUIDE
Frequency Synthesis
Single PLL Synthesizers
Product
MaximumFrequency
(MHz)
SupplyVoltage
(V)
NominalSupply
Current (mA) Features Packaging
MC145151-2 20 @ 5.0 V 3.0 to 9.0 7.5 @ 5 V Parallel Interface DW/751F
MC145152-2 20 @ 5.0 V 3.0 to 9.0 7.5 @ 5 V Parallel Interface, Uses External Dual-ModulusPrescaler
DW/751F
MC145170-2 100 @ 3.0 V185 @ 4.5 V
2.7 to 5.5 2 @ 3 V6 @ 5 V
Serial Interface, Auxiliary Reference Divider,Evaluation Kit - MC145170EVK
P/648,D/751B,DT/948C
Frequency Synthesis Packages
CASE 648
P SUFFIX
(DIP−16)
CASE 751B
D SUFFIX
(SO−16)
CASE 751F
DW SUFFIX
(SO−28L)
CASE 751G
DW SUFFIX
(SO−16W)
CASE 948C
DT SUFFIX
(TSSOP−16)
15FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF TransistorsFreescale Semiconductor(1) continues to be the industryleader in RF transistor technology. Our current portfolioranges from high gain and low noise devices at microwavefrequencies to high power devices for fixed RF and microwaveapplications. Technical innovation combined with world-classmanufacturing capability allows Freescale to offer world classproduct, service and support to its customers.From our LDMOS and GaAs portfolio, the user can choosefrom a variety of packages. They include plastic and ceramicthat are microstrip circuit compatible or surface mountable.Many are designed for automated assembly equipment.
Table of ContentsPage
RF High Power LDMOS Transistors 16. . . . . . . . . . . . . . . . . Mobile - To 520 MHz 16. . . . . . . . . . . . . . . . . . . . . . . . . . . TV Broadcast - To 1000 MHz 16. . . . . . . . . . . . . . . . . . . Cellular - To 1000 MHz 17. . . . . . . . . . . . . . . . . . . . . . . . . PCS and 3G - To 2100 MHz 18. . . . . . . . . . . . . . . . . . . . MMDS - To 2600 MHz 18. . . . . . . . . . . . . . . . . . . . . . . . .
RF Power GaAs Transistors 21. . . . . . . . . . . . . . . . . . . . . . . Linear Transistors - To 3500 MHz 21. . . . . . . . . . . . . . . .
RF Low Power Transistors 22. . . . . . . . . . . . . . . . . . . . . . . . . RF High Power Amplifier Line-ups 23. . . . . . . . . . . . . . . . . . Packages 30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(1) The Semiconductor Products sector of Motorola, Inc. became FreescaleSemiconductor, Inc. in 2004.
FREESCALE SEMICONDUCTOR 16
WIRELESS RF PRODUCTSELECTOR GUIDE
RF Transistors
RF High Power LDMOS TransistorsFreescale Semiconductor LDMOS technology is ideally suited for RF power amplifier applications. Several families of productshave been targeted for specific markets including VHF and UHF portable/land mobile, 900 MHz linear cellular, GSM, TDMA andCDMA, digital television, GSM EDGE, PCS, UMTS, and W-CDMA.With the unique LDMOS characteristics, these parts offer superior thermal performance. This is due to the simplified packagedesign, which offers excellent Class AB intermodulation performance under medium peak- to-average ratios providing a superiordevice choice for advanced digital modulations formats or high gain applications.
Table 1. Mobile - To 520 MHz Designed for broadband VHF and UHF commercial and industrial applications. The high gain and broadband performanceof these devices make them ideal for large-signal, common-source amplifier applications in 12.5/7.5 volt mobile, portableand base station operation.
Frequency Gain ηBand(37) Pout Test VDD (Typ)/Freq. Eff. (Typ) θJC
Product MHz Watts Signal Volts dB/MHz % °C/W Pkg/Style
VHF & UHF, Land Mobile Radio, Class AB
MRF1513T1(18f) U 400-520 3 CW 1-Tone 7.5/12.5 11/520 55 4.0 466/1MRF1511T1(18f) U 135-175 8 CW 1-Tone 7.5 11.5/175 55 2.0 466/1MRF1517T1(18f) U 430-520 8 CW 1-Tone 7.5 11/520 55 2.0 466/1MRF1518T1(18f) U 400-520 8 CW 1-Tone 12.5 11/520 55 2.0 466/1MRF1535T1(18j) U 400-520 35 CW 1-Tone 12.5 10(Min)/520 50(Min) 0.90 1264/1MRF1535FT1(18j) U 400-520 35 CW 1-Tone 12.5 10(Min)/520 50(Min) 0.90 1264A/1MRF1550T1(18j) U 135-175 50 CW 1-Tone 12.5 10(Min)/175 50(Min) 0.75 1264/1MRF1550FT1(18j) U 135-175 50 CW 1-Tone 12.5 10(Min)/175 50(Min) 0.75 1264A/1MRF1570T1(18j) U 400-470 70 CW 1-Tone 12.5 10(Min)/470 50(Min) 0.75 1366/1MRF1570FT1(18j) U 400-470 70 CW 1-Tone 12.5 10(Min)/470 50(Min) 0.75 1366A/1
Table 2. TV Broadcast - To 1000 MHz
Frequency Gain ηBand (37) Pout Test VDD (Typ)/Freq. Eff. (Typ) θJC
Product MHz Watts Signal Volts dB/MHz % °C/W Pkg/Style
470 - 1000 MHz, Class AB
MRF373ALR1(18a) U 470-860 75 CW 1-Tone 32 18.2/860 60 0.89 360B/1MRF373ALSR1(18a) U 470-860 75 CW 1-Tone 32 18.2/860 60 0.63 360C/1MRF374A U 470-860 130 PEP 2-Tone 32 17.3/860 41.2 0.58 375F/1MRF372 I 470-860 180 PEP 2-Tone 32 17/860 36 0.5 375G/1MRF372R5(18p) I 470-860 180 PEP 2-Tone 32 17/860 36 0.5 375G/1MRF377 I/O 470-860 45 AVG OFDM 32 18.2/860 23 0.36 375G/1MRF377R3(18i) I/O 470-860 45 AVG OFDM 32 18.2/860 23 0.36 375G/1MRF377R5(18p) I/O 470-860 45 AVG OFDM 32 18.2/860 23 0.36 375G/1
(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.(37)U = Unmatched; I = Input; I/O = Input/Output.
17FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF High Power LDMOS Transistors (continued)
Table 3. Cellular - To 1000 MHz
Frequency Pout Gain ηBand(37) (Typ) Test VDD (Typ)/Freq. Eff. (Typ) θJC Pkg/
Product MHz Watts Signal Volts dB/MHz % °C/W Style
800 - 1000 MHz, Class AB
MRF9002R2(18e) U 960 (3x) 2 PEP(41) 2-Tone 26 18/960 50 12 978/-MRF9030MBR1(18a) U 945 30 PEP 2-Tone 26 20/945 41 1.08 1337/1MRF9030MR1(18a) U 945 30 PEP 2-Tone 26 20/945 41 1.08 1265/1MRF9030LR1(18a) U 945 30 PEP 2-Tone 26 19/945 41.5 1.9 360B/1MRF9030LSR1(18a) U 945 30 PEP 2-Tone 26 19/945 41.5 1.5 360C/1MRF9045MBR1(18a) U 945 45 PEP 2-Tone 28 19/945 41 0.85 1337/1MRF9045MR1(18a) U 945 45 PEP 2-Tone 28 19/945 41 0.85 1265/1MRF9045LR1(18a) U 945 45 PEP 2-Tone 28 18.8/945 42 1.4 360B/1MRF9045LSR1(18a) U 945 45 PEP 2-Tone 28 18.8/945 42 1.0 360C/1MRF5S9070NR1(18a)★ U 880 14 AVG N-CDMA 26 17.8/880 30 0.80 1265/1MRF9060MBR1(18a) U 945 60 PEP 2-Tone 26 18/945 40 0.56 1337/1MRF9060MR1(18a) U 945 60 PEP 2-Tone 26 18/945 40 0.56 1265/1MRF9060LR1(18a) U 945 60 PEP 2-Tone 26 17/945 40 1.1 360B/1MRF9060LSR1(18a) U 945 60 PEP 2-Tone 26 17/945 40 0.8 360C/1MRF6522-70R3(18i) I 921-960 70 CW 1-Tone 26 16/921,960 58 1.1 465D/1MRF9080R3(18i) I 921-960 70 CW 1-Tone 26 18.5/921,960 52 0.7 465/1MRF9080LSR3(18i) I 921-960 70 CW 1-Tone 26 18.5/921,960 52 0.7 465A/1MRF9085R3(18i) I 880 90 PEP 2-Tone 26 17.9/880 40 0.7 465/1MRF9085LSR3(18i) I 880 90 PEP 2-Tone 26 17.9/880 40 0.7 465A/1MRF5S9100NR1(18a)★ I 880 20 AVG N-CDMA 26 19.5/880 28 0.52 1486/1MRF5S9100NBR1(18a)★ I 880 20 AVG N-CDMA 26 19.5/880 28 0.52 1484/1MRF5S9100MR1(18a)★ I 880 20 AVG N-CDMA 26 19.5/880 28 0.52 1486/1MRF5S9100MBR1(18a)★ I 880 20 AVG N-CDMA 26 19.5/880 28 0.52 1484/1MRF9100R3(18i) I/O 921-960 100 CW 1-Tone 26 17.2/960 60 1.0 465/1MRF9100SR3(18i) I/O 921-960 100 CW 1-Tone 26 17.2/960 60 1.0 465A/1MRF5S9101NR1(18a)★ I 869-960 100 CW 1-Tone 26 17.5/960 60 0.41 1486/1MRF5S9101NBR1(18a)★ I 869-960 100 CW 1-Tone 26 17.5/960 60 0.41 1484/1MRF5S9101MR1(18a)★ I 869-960 100 CW 1-Tone 26 17.5/960 60 0.41 1486/1MRF5S9101MBR1(18a)★ I 869-960 100 CW 1-Tone 26 17.5/960 60 0.41 1484/1MRF9120R3(18i) I 880 120 PEP 2-Tone 26 16.5/880 39 0.45 375B/1MRF9130LR3(18i) I 921-960 130 CW 1-Tone 28 16.5/921,960 48 0.6 465/1MRF9130LSR3(18i) I 921-960 130 CW 1-Tone 28 16.5/921,960 48 0.6 465A/1MRF9135LR3(18i) I 880 25 AVG N-CDMA 26 17.8/880 25 0.6 465/1MRF9135LSR3(18i) I 880 25 AVG N-CDMA 26 17.8/880 25 0.6 465A/1MRF9180R6(18o) I 880 170 PEP 2-Tone 26 17.5/880 39 0.45 375D/1MRF9200LR3(18i,46a) I/O 880 40 AVG N-CDMA 26 17.5/880 25 0.37 465B/1MRF9200LSR3(18i,46a) I/O 880 40 AVG N-CDMA 26 17.5/880 25 0.37 465C/1MRF9210R3(18i)★ I/O 880 40 AVG N-CDMA 26 16.5/880 25.5 0.31 375G/1
(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.(37)U = Unmatched; I = Input; I/O = Input/Output.(41)Three individual transistors in a single package.(46)To be introduced: a) 2Q04; b) 3Q04; c) 4Q04; d)1Q05
★New Product
FREESCALE SEMICONDUCTOR 18
WIRELESS RF PRODUCTSELECTOR GUIDE
RF High Power LDMOS Transistors (continued)
Table 4. PCS and 3G - To 2100 MHz
Frequency Pout Gain ηBand(37) (Typ) Test VDD (Typ)/Freq. Eff. (Typ) θJC Pkg/
Product MHz Watts Signal Volts dB/MHz % °C/W Style
1805 - 1990 MHz, Class AB (GSM1800, GSM1900, GSM EDGE and PCS TDMA)
MRF18030ALR3(18i) I/O 1805-1880 30 CW 1-Tone 26 14/1805,1880 50 2.1 465E/1MRF18030ALSR3(18i) I/O 1805-1880 30 CW 1-Tone 26 14/1805,1880 50 2.1 465F/1MRF18030BLR3(18i) I/O 1930-1990 30 CW 1-Tone 26 14/1930,1990 50 2.1 465E/1MRF18030BLSR3(18i) I/O 1930-1990 30 CW 1-Tone 26 14/1930,1990 50 2.1 465F/1MRF6S18060N(46c) I/O 1800-2000 60 CW 1-Tone 26 15/1990 56 � 1486/1MRF6S18060NB(46c) I/O 1800-2000 60 CW 1-Tone 26 15/1990 56 � 1484/1MRF18060AR3(18i) I/O 1805-1880 60 CW 1-Tone 26 13/1805,1880 45 0.97 465/1MRF18060ASR3(18i) I/O 1805-1880 60 CW 1-Tone 26 13/1805,1880 45 0.97 465A/1MRF18060ALSR3(18i) I/O 1805-1880 60 CW 1-Tone 26 13/1805,1880 45 0.97 465A/1MRF18060BR3(18i) I/O 1930-1990 60 CW 1-Tone 26 13/1930,1990 45 0.97 465/1MRF18060BSR3(18i) I/O 1930-1990 60 CW 1-Tone 26 13/1930,1990 45 0.97 465A/1MRF18060BLSR3(18i) I/O 1930-1990 60 CW 1-Tone 26 13/1930,1990 45 0.97 465A/1MRF18085AR3(18i) I/O 1805-1880 85 CW 1-Tone 26 15/1805,1880 52 0.79 465/1MRF18085ALSR3(18i) I/O 1805-1880 85 CW 1-Tone 26 15/1805,1880 52 0.79 465A/1MRF18085BR3(18i) I/O 1930-1990 85 CW 1-Tone 26 12.5/1930,1990 50 0.79 465/1MRF18085BLSR3(18i) I/O 1930-1990 85 CW 1-Tone 26 12.5/1930,1990 50 0.79 465A/1MRF6S18090N(46d) I/O 1800-2000 90 CW 1-Tone 26 15/1990 52 � 1486/1MRF6S18090NB(46d) I/O 1800-2000 90 CW 1-Tone 26 15/1990 52 � 1484/1MRF18090AR3(18i) I/O 1805-1880 90 CW 1-Tone 26 13.5/1805,1880 52 0.70 465B/1MRF18090BR3(18i) I/O 1930-1990 90 CW 1-Tone 26 13.5/1930,1990 45 0.70 465B/1MRF18090BSR3(18i) I/O 1930-1990 90 CW 1-Tone 26 13.5/1930,1990 45 0.70 465C/1
1900 MHz, Class AB (2-CH N-CDMA and W-CDMA)
MRF19030LR3(18i) I/O 1930-1990 30 PEP 2-Tone 26 13/1990 36 2.1 465E/1MRF19030LSR3(18i) I/O 1930-1990 30 PEP 2-Tone 26 13/1990 36 2.1 465F/1MRF19045LR3(18i) I/O 1930-1990 9.5 AVG N-CDMA 26 14.5/1990 23.5 1.65 465E/1MRF19045LSR3(18i) I/O 1930-1990 9.5 AVG N-CDMA 26 14.5/1990 23.5 1.65 465F/1MRF6S19060N(46d) I/O 1930-1990 12 AVG N-CDMA 28 15/1990 26 � 1486/1MRF6S19060NB(46d) I/O 1930-1990 12 AVG N-CDMA 28 15/1990 26 � 1484/1MRF5S19060N(46b) I/O 1930-1990 12 AVG N-CDMA 28 14/1990 23 0.80 1486/1MRF5S19060NB(46b) I/O 1930-1990 12 AVG N-CDMA 28 14/1990 23 0.80 1484/1MRF19060R3(18i) I/O 1930-1990 60 PEP 2-Tone 26 12.5/1990 36 0.97 465/1MRF19060SR3(18i) I/O 1930-1990 60 PEP 2-Tone 26 12.5/1990 36 0.97 465A/1MRF19085R3(18i) I/O 1930-1990 18 AVG N-CDMA 26 13/1990 23 0.79 465/1MRF19085LR3(18i) I/O 1930-1990 18 AVG N-CDMA 26 13/1990 23 0.79 465/1MRF19085SR3(18i) I/O 1930-1990 18 AVG N-CDMA 26 13/1990 23 0.79 465A/1MRF19085LSR3(18i) I/O 1930-1990 18 AVG N-CDMA 26 13/1990 23 0.79 465A/1MRF5S19090LR3(18i) I/O 1930-1990 18 AVG N-CDMA 28 14.5/1990 25.8 0.67 465/1MRF5S19090LSR3(18i) I/O 1930-1990 18 AVG N-CDMA 28 14.5/1990 25.8 0.67 465A/1MRF19090R3(18i) I/O 1930-1990 90 PEP 2-Tone 26 11.5/1990 35 0.65 465B/1MRF19090SR3(18i) I/O 1930-1990 90 PEP 2-Tone 26 11.5/1990 35 0.65 465C/1MRF6S19100N(46d) I/O 1930-1990 22 AVG N-CDMA 28 14.5/1990 25.5 � 1486/1MRF6S19100NB(46d) I/O 1930-1990 22 AVG N-CDMA 28 14.5/1990 25.5 � 1484/1
(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.(37)U = Unmatched; I = Input; I/O = Input/Output.(46)To be introduced: a) 2Q04; b) 3Q04; c) 4Q04; d)1Q05
19FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF High Power LDMOS Transistors (continued)
Table 4. PCS and 3G - To 2100 MHz (continued)
Frequency Pout Gain ηBand(37) (Typ) Test VDD (Typ)/Freq. Eff. (Typ) θJC Pkg/
Product MHz Watts Signal Volts dB/MHz % °C/W Style
1900 MHz, Class AB (2-CH N-CDMA and W-CDMA) (continued)
MRF5S19100HR3(18i)★ I/O 1930-1990 22 AVG N-CDMA 28 13.9/1990 25.5 0.64 465/1MRF5S19100HSR3(18i)★ I/O 1930-1990 22 AVG N-CDMA 28 13.9/1990 25.5 0.64 465A/1MRF6S19100H(46b) I/O 1930-1990 22 AVG N-CDMA 28 16/1990 28 � 465/1MRF6S19100HS(46b) I/O 1930-1990 22 AVG N-CDMA 28 16/1990 28 � 465A/1MRF19125R3(18i) I/O 1930-1990 24 AVG N-CDMA 26 13.5/1990 22 0.53 465B/1MRF5S19130R3(18i) I/O 1930-1990 26 AVG N-CDMA 28 13/1990 25 0.54 465B/1MRF5S19130SR3(18i) I/O 1930-1990 26 AVG N-CDMA 28 13/1990 25 0.54 465C/1MRF6S19140H(46c) I/O 1930-1990 29 AVG N-CDMA 28 16/1990 28 � 465B/1MRF6S19140HS(46c) I/O 1930-1990 29 AVG N-CDMA 28 16/1990 28 � 465C/1MRF5S19150R3(18i) I/O 1930-1990 32 AVG N-CDMA 28 14/1990 26 0.49 465B/1MRF5S19150SR3(18i) I/O 1930-1990 32 AVG N-CDMA 28 14/1990 26 0.49 465C/1MRF5P20180R6 I/O 1930-1990 38 AVG W-CDMA 28 14/1990 26 0.43 375D/1
2000 MHz, Class A, AB
MRF281SR1(18a) U 1930-2000 4 PEP 2-Tone 26 12.5/2000 33 5.74 458B/1MRF281ZR1(18a) U 1930-2000 4 PEP 2-Tone 26 12.5/2000 33 5.74 458C/1MRF282SR1(18a) U 1930-2000 10 PEP 2-Tone 26 11.5/2000 28(min) 4.2 458B/1MRF282ZR1(18a) U 1930-2000 10 PEP 2-Tone 26 11.5/2000 28(min) 4.2 458C/1MRF284LR1(18a) U 1930-2000 30 PEP 2-Tone 26 10.5/2000 35 2.0 360B/1MRF284LSR1(18a) U 1930-2000 30 PEP 2-Tone 26 10.5/2000 35 2.0 360C/1
2100 MHz, Class AB (2-CH W-CDMA, UMTS)
MRF21010LR1(18a) U 2110-2170 10 PEP 2-Tone 28 13.5/2170 35 5.5 360B/1MRF21010LSR1(18a) U 2110-2170 10 PEP 2-Tone 28 13.5/2170 35 5.5 360C/1MRF21030LR3(18i) I/O 2110-2170 30 PEP 2-Tone 28 13/2170 33 2.1 465E/1MRF21030LSR3(18i) I/O 2110-2170 30 PEP 2-Tone 28 13/2170 33 2.1 465F/1MRF21045LR3(18i) I/O 2110-2170 10 AVG W-CDMA 28 15/2170 23.5 1.65 465E/1MRF21045LSR3(18i) I/O 2110-2170 10 AVG W-CDMA 28 15/2170 23.5 1.65 465F/1MRF6S21060N(46d) I/O 2110-2170 14 AVG W-CDMA 28 15/2170 26 � 1486/1MRF6S21060NB(46d) I/O 2110-2170 14 AVG W-CDMA 28 15/2170 26 � 1484/1MRF21060R3(18i) I/O 2110-2170 60 PEP 2-Tone 28 12.5/2170 34 1.02 465/1MRF21060SR3(18i) I/O 2110-2170 60 PEP 2-Tone 28 12.5/2170 34 1.02 465A/1MRF21085R3(18i) I/O 2110-2170 19 AVG W-CDMA 28 13.6/2170 23 0.78 465/1MRF21085LSR3(18i) I/O 2110-2170 19 AVG W-CDMA 28 13.6/2170 23 0.78 465A/1MRF21085SR3(18i) I/O 2110-2170 19 AVG W-CDMA 28 13.6/2170 23 0.78 465A/1MRF21090R3(18i) I/O 2110-2170 90 PEP 2-Tone 28 11.7/2170 33 0.65 465B/1MRF21090SR3(18i) I/O 2110-2170 90 PEP 2-Tone 28 11.7/2170 33 0.65 465C/1MRF5S21090LR3(18i) I/O 2110-2170 19 AVG W-CDMA 28 14.5/2170 26 0.78 465/1MRF5S21090LSR3(18i) I/O 2110-2170 19 AVG W-CDMA 28 14.5/2170 26 0.78 465A/1MRF6S21100N(46c) I/O 2110-2170 23 AVG W-CDMA 28 14.5/2170 25.5 � 1486/1MRF6S21100NB(46c) I/O 2110-2170 23 AVG W-CDMA 28 14.5/2170 25.5 � 1484/1MRF5S21100HR3(18i)★ I/O 2110-2170 23 AVG W-CDMA 28 13.5/2170 26 0.57 465/1MRF5S21100HSR3(18i)★ I/O 2110-2170 23 AVG W-CDMA 28 13.5/2170 26 0.57 465A/1MRF6S21100HR3(18i)★ I/O 2110-2170 23 AVG W-CDMA 28 15.9/2170 27.6 0.45 465/1MRF6S21100HSR3(18i)★ I/O 2110-2170 23 AVG W-CDMA 28 15.9/2170 27.6 0.45 465A/1
(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.(37)U = Unmatched; I = Input; I/O = Input/Output.(46)To be introduced: a) 2Q04; b) 3Q04; c) 4Q04; d)1Q05
★New Product
FREESCALE SEMICONDUCTOR 20
WIRELESS RF PRODUCTSELECTOR GUIDE
RF High Power LDMOS Transistors (continued)
Table 4. PCS and 3G - To 2100 MHz (continued)
Frequency Pout Gain ηBand(37) (Typ) Test VDD (Typ)/Freq. Eff. (Typ) θJC Pkg/
Product MHz Watts Signal Volts dB/MHz % °C/W Style
2100 MHz, Class AB (2-CH W-CDMA, UMTS) (continued)
MRF21120R6(3,18o) I/O 2110-2170 120 PEP 2-Tone 28 11.4/2170 34.5 0.45 375D/1MRF21125R3(18i) I/O 2110-2170 20 AVG W-CDMA 28 13/2170 18 0.53 465B/1MRF21125SR3(18i) I/O 2110-2170 20 AVG W-CDMA 28 13/2170 18 0.53 465C/1MRF5S21130HR3(18i)★ I/O 2110-2170 28 AVG W-CDMA 28 13.5/2170 26 � 465B/1MRF5S21130HSR3(18i)★ I/O 2110-2170 28 AVG W-CDMA 28 13.5/2170 26 � 465C/1MRF6S21140H(46c) I/O 2110-2170 30 AVG W-CDMA 28 16/2170 28 � 465B/1MRF6S21140HS(46c) I/O 2110-2170 30 AVG W-CDMA 28 16/2170 28 � 465C/1MRF5S21150R3(18i) I/O 2110-2170 33 AVG W-CDMA 28 12.5/2170 25 0.47 465B/1MRF5S21150SR3(18i) I/O 2110-2170 33 AVG W-CDMA 28 12.5/2170 25 0.47 465C/1MRF5P21180HR6(18o)★ I/O 2110-2170 38 AVG W-CDMA 28 14/2170 25.5 0.31 375D/1MRF21180R6(3,18o) I/O 2110-2170 38 AVG W-CDMA 28 12.1/2170 22 0.46 375D/1MRF6P21190H(46b) I/O 2110-2170 44 AVG W-CDMA 28 15.5/2170 27 � 375D/1MRF5P21240R6(18o) I/O 2110-2170 52 AVG W-CDMA 28 13/2170 24 0.35 375D/1
Table 5. MMDS � To 2600 MHz
Frequency Pout Gain ηBand(37) (Typ) Test VDD (Typ)/Freq. Eff. (Typ) θJC Pkg/
Product MHz Watts Signal Volts dB/MHz % °C/W Style
2600-2700 MHz, Class AB
MRF6S27085H(46c) I/O 2600-2700 20 AVG N-CDMA 28 15.5/2655 25.5 � 465/1MRF6S27085HS(46c) I/O 2600-2700 20 AVG N-CDMA 28 15.5/2655 25.5 � 465A/1MRF6P27160H(46c) I/O 2600-2700 37 AVG N-CDMA 28 15/2655 23.5 � 375D/1
(3)Internal Impedance Matched Push-Pull Transistors(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.(37)U = Unmatched; I = Input; I/O = Input/Output.(46)To be introduced: a) 2Q04; b) 3Q04; c) 4Q04; d)1Q05
★New Product
21FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF Power GaAs TransistorsFreescale Semiconductor power GaAs transistors are made using an InGaAs PHEMT epitaxial structure for superior RF efficiencyand linearity. The FETs listed in this section are designed for operation in base station infrastructure RF power amplifiers and aregrouped according to frequency range and type of application. Parts are listed first by order of operating voltage, then by increasingoutput power.
Table 1. Linear Transistors � To 3500 MHz
Frequency Pout Gain Eff.Band(37) (Typ)/Freq Test VDD (Typ)/Freq. (Typ)/Freq. θJC Pkg/
Product MHz Watts/MHz Signal Volts dB/MHz %/MHz °C/W Style
3500 MHz, Class AB (WLL, BWA, W-CDMA)
MRFG35003MT1(18f)★ U DC-5800 0.3 AVG/3550
W-CDMA(44) 12 11.5/3550 25/3550 � 466/1
MRFG35003M6T1(18f) U DC-5800 0.45 AVG/3550
W-CDMA(44) 6 9/3550 24/3550 � 466/1
MRFG35005MT1(18f)★ U DC-5800 0.45 AVG/3550
W-CDMA(44) 12 11/3550 25/3550 � 466/1
MRFG35010 U DC-5800 1 AVG/3550
W-CDMA(44) 12 10/3550 30/3550 4.8(15) 360D/1
MRFG35010MT1(18f) U DC-5800 0.9 AVG/3550
W-CDMA(44) 12 10/3550 28/3550 � 466/1
MRFG35030R5(18p)★ I/O 3400-3600 3.5 AVG/3550
W-CDMA(44) 12 12/3550 21/3550 � 1490/1
(15)Class A = 5.3(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.(37)U = Unmatched; I = Input; I/O = Input/Output.(44)Peak-to-Average Power Ratio = 10 dB
★New Product
FREESCALE SEMICONDUCTOR 22
WIRELESS RF PRODUCTSELECTOR GUIDE
RF Low Power Transistors
Gain - Bandwidth NFmin @ f Gain @ f Maximum Ratings
Product
fτTyp
GHz
ICmA
TypdB GHz
TypdB GHz
V(BR)CEOVolts
ICmA Packaging
MBC13900(18c) 15 20 1.0 1.0 17 1.0 7.0 20 318M/
1.3 2.0 14 2.0 SOT-343
(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.
23FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF High Power Amplifier Line-ups
Mobile - UHF 400 - 520 MHz
221 mW 35 W
MRF1513T1 MRF1535
238 mW 3 W
MRF1513T1
11 dB
11 dB 11 dB
Mobile - VHF 135 - 175 MHz
562 mW 100 W
MRF1511T1 MRF1550
566 mW 8 W
MRF1511T1
11.5 dB
11.5 dB 11 dB
Mobile - UHF 400 - 470 MHz
440 mW 70 W
MRF1518T1 MRF1570
635 mW 8 W
MRF1518T1
11 dB
11 dB 11 dB
FREESCALE SEMICONDUCTOR 24
WIRELESS RF PRODUCTSELECTOR GUIDE
RF High Power Amplifier Line-ups (continued)
Broadcast 470 - 860 MHz
5760 W
4 � MRF372
5.7 W
MRF372
4 � MRF372
1
•••8
180 W
15 dB
15 dB
Broadcast 470 - 860 MHz
4800 W
4 � MRF373A
4.8 W
MRF373A
4 � MRF373A
150 W
1
•••
16
MRF373A
15 dB
15 dB
25FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF High Power Amplifier Line-ups (continued)
4160 W
4 � MRF374A
4.2 W
4 � MRF374A
130 W
1
•••8
Broadcast 470 - 860 MHz
MRF374A
15 dB
15 dB
7680 W
4 � MRF377
7.7 W
4 � MRF377
240 W
1
•••8
Broadcast 470 - 860 MHz
MRF377
15 dB
15 dB
FREESCALE SEMICONDUCTOR 26
WIRELESS RF PRODUCTSELECTOR GUIDE
RF High Power Amplifier Line-ups (continued)
GSM and EDGE - 900 MHz
Ceramic MRF9030 MRF9045
MRF9060
MRF9100
MRF9080 MRF9130
MRF9180
MRF9200
MRF9135MRF9085
Plastic
MHVIC915R2
MW4IC915
MRF9045M
MRF9060M
MRF9120
MRF9210
MRF9002R2
MWIC930
MRF9030M
Hybrid MHL9838
MHL9236
MHL9318
MHVIC910HR2
MRF5S9070N
MRF5S9100N
MRF5S9101N
GSM and EDGE - 1800 MHz
Ceramic MRF18060A
MRF18085A
MRF18090A
Hybrid
MRF18030A
MHL18336
MHL18926
Plastic MHVIC2114R2
MHPA18010
MW4IC2020M
MW5IC2030M
MRF6S18060N
MRF6S18090N
27FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF High Power Amplifier Line-ups (continued)
GSM and EDGE - 1900 MHz
Ceramic MRF18060BMRF18030B
MRF18085B
MRF18090B
Hybrid MHPA19010
MHL19338
MHL19926
MHL19936
Plastic MHVIC2114R2
MW4IC2020M
MRF6S18060N
MRF6S18090N
N-CDMA - 1900 MHz
Ceramic MRF21010 MRF19030 MRF19060
MRF19045 MRF19085
MRF5S19090
Hybrid MHL19338
MRF19090 MRF19125
MRF5S19150
MRF5S19130
MHL19936
MHL19926
MRF5S19100
MRF5P20180
MHPA19010
Plastic MHVIC2114R2
MW4IC2020M
MRF5S19060N
MW4IC2230M
MRF6S19100
MRF6S19140
MRF6S19060N
MRF6S19100N
FREESCALE SEMICONDUCTOR 28
WIRELESS RF PRODUCTSELECTOR GUIDE
RF High Power Amplifier Line-ups (continued)
W-CDMA - 2200 MHz
Ceramic MRF21010 MRF21030 MRF21060
MRF21045 MRF21085
MRF5S21090
Hybrid MHL21336
MRF21090
MRF21120
MRF21125
MRF21180
MHPA21010
MRF5S21100
MRF5S21130
MRF5S21150
MRF5P21180
MRF5P21240
Plastic MHVIC2114R2
MW4IC2230M
MW5IC2030M
MRF6S21100
MRF6S21140
MRF6P21190
MRF6S21060N
MRF6S21100N
MMDS - 2700 MHz
Ceramic MRF6S27085 MRF6P27160
29FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF High Power Amplifier Line-ups (continued)
60 mW 60 W
WLL - 3500 MHz
Ceramic MRFG35010 MRFG35030R5
Plastic
MRFG35003M6T1
MRFG35005MT1
MRFG35010MT1
MRFG35003MT1
MMG3001T1
MMG3002T1
MMG3003T1
FREESCALE SEMICONDUCTOR 30
WIRELESS RF PRODUCTSELECTOR GUIDE
RF Transistor Packages
CASE 360B
STYLE 1
(NI−360)
CASE 360C
STYLE 1
(NI−360S)
CASE 375B
STYLE 1
(NI−860)
CASE 375D
STYLE 1
(NI−1230)
SCALE 1:1
CASE 360D
STYLE 1
(NI−360HF)
CASE 375F
STYLE 1
(NI−650)
CASE 375G
STYLE 1
(NI−860C3)
CASE 375H
STYLE 1
(NI−860S)
CASE 458B
STYLE 1
(NI−200S)
CASE 458C
STYLE 1
(NI−200Z)
CASE 465F
STYLE 1
(NI−400S)
CASE 465A
STYLE 1
(NI−780S)
CASE 466
STYLE 1
PLASTIC
(PLD−1.5)
CASE 465B
STYLE 1
(NI−880)
CASE 465C
STYLE 1
(NI−880S)
CASE 465D
STYLE 1
(NI−600)
CASE 465E
STYLE 1
(NI−400)
CASE 465
STYLE 1
(NI−780)
CASE 318M
(SOT−343)
31FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF Transistor Packages (continued)
SCALE 1:1
CASE 1366
STYLE 1
PLASTIC
(TO−272−8 Wrap)
CASE 1329A
STYLE 1
PLASTIC
(TO−272 WB−16 Gull)
CASE 1366A
STYLE 1
PLASTIC
(TO−272−8)
CASE 1329
STYLE 1
PLASTIC
(TO−272 WB−16)
CASE 1265
STYLE 1
PLASTIC
(TO−270−2)
CASE 1264
STYLE 1
PLASTIC
(TO−272−6 Wrap)
CASE 978
PLASTIC
(PFP−16)
CASE 1264A
STYLE 1
PLASTIC
(TO−272−6)
CASE 1337
STYLE 1
PLASTIC
(TO−272−2)
CASE 1484
STYLE 1
PLASTIC
(TO−272 WB−4)
CASE 1486
STYLE 1
PLASTIC
(TO−270 WB−4)
CASE 1490
STYLE 1
(HF−600)
FREESCALE SEMICONDUCTOR 32
WIRELESS RF PRODUCTSELECTOR GUIDE
33FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF Amplifier ICs andModulesFreescale Semiconductor�s RF portfolio includes manyhybrid designs optimized to perform in narrowband basestation transmitter applications and IC designs optimized forwideband applications. Freescale modules feature two ormore active transistors (LDMOS or GaAs die technology)and their associated 50 ohm matching networks. Circuitsubstrate and metallization have been selected for optimumperformance and reliability. For PA designers, IC driverdevices offer the benefits of multiple gain stages in onepackage with most of the decoupling and matching circuitryincorporated into a single low-cost plastic device.Freescale WLAN power amplifier ICs are designed to addressthe high efficiency, high linearity requirements of 802.11WLAN power amplifier applications. Supplied from a single3.3 V supply and featuring built - in detectors, these amplifiersoffer a range of gain and performance.
Table of ContentsPage
RF Amplifier ICs and Modules 33. . . . . . . . . . . . . . . . . . . . . Base Stations 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . WLAN Power Amplifiers 35. . . . . . . . . . . . . . . . . . . . . . . . Packages 36. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FREESCALE SEMICONDUCTOR 34
WIRELESS RF PRODUCTSELECTOR GUIDE
RF Amplifier ICs and Modules Complete amplifiers with 50 ohm input impedances are available for all popular base station transmitter systems, includingGSM and CDMA, covering frequencies from 800 MHz up to 2.2 GHz.
Base StationsDesigned for applications such as macrocell drivers and microcell output stage, these Class AB amplifiers are ideal for base stationsystems with power requirements up to 30 watts.
Table 1. Base Station IC Drivers
SupplyFrequency P1dB Gain (Typ) Voltage System Die
Product MHz Watts dB Volts Class Application Technology Pkg/Style
MHVIC915R2(18e) 746-960 15 30 26 AB N-CDMA,GSM/GSM
EDGE
LDMOS 978/-
MWIC930R1(18a) 746-960 30 30 27 AB N-CDMA,GSM/GSM
EDGE
LDMOS 1329/-
MWIC930GR1(18a) 746-960 30 30 27 AB N-CDMA,GSM/GSM
EDGE
LDMOS 1329A/-
MW4IC915MBR1(18a) 860-960 15 30 26 AB N-CDMA,GSM/GSM
EDGE
LDMOS 1329/-
MW4IC915GMBR1(18a) 860-960 15 30 26 AB N-CDMA,GSM/GSM
EDGE
LDMOS 1329A/-
MW4IC001MR4(18n)★ 880-2170 0.85 13 28 AB N-CDMA,W-CDMA,GSM/GSM
EDGE
LDMOS 466/1
MHVIC910HR2(18e) 921-960 10 39 26 AB GSM900 LDMOS 978/-MW4IC2020MBR1(18a) 1805-1990 20 29 26 AB N-CDMA,
GSM/GSMEDGE
LDMOS 1329/-
MW4IC2020GMBR1(18a) 1805-1990 20 29 26 AB N-CDMA,GSM/GSM
EDGE
LDMOS 1329A/-
MW5IC2030MBR1(18a)★ 1930-1990 30 23 27 AB GSM/GSMEDGE,
W-CDMA,PHS
LDMOS 1329/-
MW5IC2030GMBR1(18a)★ 1930-1990 30 23 27 AB GSM/GSMEDGE,
W-CDMA,PHS
LDMOS 1329A/-
MHVIC2115R2(18e) 2110-2170 15 34 26 AB W-CDMA LDMOS 978/-MHVIC2114R2(18e,46a) 2110-2170 15 32 27 AB W-CDMA LDMOS 978/-MW4IC2230MBR1(18a) 2110-2170 30 31.5 28 AB W-CDMA LDMOS 1329/-MW4IC2230GMBR1(18a) 2110-2170 30 31.5 28 AB W-CDMA LDMOS 1329A/-
(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.(46)To be introduced: a) 2Q04; b) 3Q04; c) 4Q04; d) 1Q05
★New Product
35FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF Amplifier ICs and Modules: Base Stations (continued)
Table 2. Base Station Module DriversDesigned for applications such as macrocell drivers and microcell output stage, these Class AB amplifiers are ideal for basestation systems with power requirements up to 10 watts.
SupplyFrequency P1dB Gain (Min) Voltage System Die
Product MHz Watts dB Volts Class Application Technology Pkg/Style
MHPA18010 1805-1880 10 24.5 28 AB N-CDMA LDMOS 301AP/3MHPA19010 1930-1990 10 24.5 28 AB PCS1900 LDMOS 301AP/3MHPA21010 2110-2170 10 23.7 28 AB W-CDMA LDMOS 301AP/3
Table 3. Base Station Module Pre-DriversThese 50 ohm amplifiers are recommended for modern multi - tone CDMA, TDMA and UMTS base station pre-driverapplications. Their high third-order intercept point, tight phase and gain control, and excellent group delay characteristics makethese devices ideal for use in high-power feedforward loops.
Ultra-Linear (for CDMA, W-CDMA, TDMA, Analog) - Class A (LDMOS Die) - Lateral MOSFETs
Gain 3rd OrderFrequency VDD IDD Gain Flatness P1dB Intercept NF
Band (Nom.) (Nom.) (Nom.) (Typ) (Typ) (Typ) (Typ) Pkg/Product MHz Volts mA dB dB dBm dBm dB Style
MHL9838 800 - 925 28 770 31 .1 39 50 3.7 301AP/1MHL9236 800 - 960 26 550 30.5 .1 34 47 3.5 301AP/1MHL9236M 800 - 960 26 550 30.5 .1 34 47 3.5 301AP/2MHL9318 860 - 900 28 500 17.5 .1 35.5 49 3.0 301AS/1MHL18336 1800 - 1900 26 500 30 .2 36 46 4.2 301AP/1MHL18926 1805 - 1880 26 1100 28.6 .3 40 50 4.2 301AY/1MHL19338 1900 - 2000 28 500 30 .1 36 46 4.2 301AP/1MHL19926 1930 - 1990 26 1000 29.4 .3 40 50 4.2 301AY/1MHL19936 1900 - 2000 26 1400 29 .2 41 49.5 4.2 301AY/1MHL21336 2110 - 2170 26 500 31 .15 35 45 4.5 301AP/1
WLAN Power AmplifiersThese devices are optimized for wireless LAN (WLAN) applications.
Table 1. Wireless LAN Power Amplifiers � Class AB � GaAs HBT
TotalQuiescent
Frequency VCC Current Itotal Gain P1dB EVMBand (Typ) (Typ) (Typ)/Pout (Typ)/Pout (Typ) (Typ)/Pout Pkg/
Product MHz Volts dBm mA/dBm dB/dBm dBm %rms/dBm Style
MMG2401 (46b) 2400-2500 3.3 156 210/19 27.5/19 26.5 3/19 1483/-MMG5004 (9) 4900-5900 3.3 115 200/18 24/18 25 3/18 1483/-
(9)In development.(46)To be introduced: a) 2Q04; b) 3Q04; c) 4Q04; d) 1Q05
FREESCALE SEMICONDUCTOR 36
WIRELESS RF PRODUCTSELECTOR GUIDE
RF Amplifier ICs and Modules Packages
CASE 301AP
STYLE 1, 2, 3
CASE 301AS
STYLE 1
CASE 301AW
STYLE 1
CASE 978
PLASTIC
(PFP−16)
CASE 301AY
STYLE 1
SCALE 1:1
CASE 1329A
STYLE 1
PLASTIC
(TO−272 WB−16 Gull)
CASE 1329
STYLE 1
PLASTIC
(TO−272 WB−16)
Case 466
Style 1
PLASTIC
(PLD−1.5)
CASE 1483
(QFN 3x3)
SCALE 4:1
37FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF General PurposeLinear Amplifier ICs andModulesFreescale Semiconductor general purpose linear amplifiermodules and ICs are designed to address a broad rangeof general purpose RF and IF applications where linearityand dynamic range are essential.
Table of ContentsPage
RF General Purpose Linear Amplifier ICs and Modules 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Packages 39. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FREESCALE SEMICONDUCTOR 38
WIRELESS RF PRODUCTSELECTOR GUIDE
RF General Purpose Linear Amplifier ICs and ModulesThese devices have been optimized for 50 ohm applications and are designed for multi -purpose applications where linearityand dynamic range are of primary concern.
Table 1. General Purpose Linear Amplifier ICs � Class A � InGaP HBT
Frequency VCC ICC Gain P1dB 3rd Order NFFrequency VCC ICC Gain P1dB 3rd Order NFBand (Nom) (Nom) (Nom)
@900 MHz
(Typ)@
900 MHz
Intercept(Typ)
(Typ)@
900 MHzProduct MHz Volts mA dB dBm dBm dB Pkg/Style
MMG3001NT1(18f)★ 40-3600 5.5 58 20 18.5 32 4 1514/1MMG3002NT1(18f)★ 40-3600 5.2 110 20 21 37 4 1514/1MMG3003NT1(18f)★ 40-3600 6.2 180 20 24 40.5 4 1514/1MMG3005T1(9) 400-2400 5 480 16* 30* 45* 6* 1543/-
*@ 2140 MHz *@ 2140 MHz *@ 2140 MHz *@ 2140 MHz
Table 2. General Purpose Linear Amplifier Modules � Class A � Silicon Bipolar
Frequency VCC ICC Gain Gain P1dB 3rd Order NFFrequency VCC ICC Gain Gain P1dB 3rd Order NFBand (Nom) (Nom) (Nom)
@100 MHz
Flatness(Typ)
(Typ)@
200 MHz
Intercept(Typ)
(Typ)@
200 MHzProduct MHz Volts mA dB dB dBm dBm dB Pkg/Style
MHW1345 10 - 200 24 310 34.5 1.0 28 44 3.8 1302/1
Note: Possible replacement for CA2830C.
(9)In development.(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.
★New Product
39FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF General Purpose Linear Amplifier Module Package
CASE 1302
STYLE 1
SCALE 1:2 SCALE 2:1
CASE 1514
STYLE 1
PLASTIC
(SOT−89)
SCALE 2:1
CASE 1543
PLASTIC
(PQFN 5x5)
FREESCALE SEMICONDUCTOR 40
WIRELESS RF PRODUCTSELECTOR GUIDE
41FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CATV DistributionAmplifier ModulesFreescale Semiconductor Hybrids are manufactured using thelatest CATV generation technology which has set newstandards for CATV system performance and reliability. Thesehybrids have been optimized to provide premium performancein all CATV systems up to 152 channels. Additions to our CATVproduct family include 40-870 MHz high output galliumarsenide (GaAs) power doublers as well as low distortion, lowpower consumption reverse amplifiers.
Table of ContentsPage
CATV Distribution Amplifier Modules 41. . . . . . . . . . . . . . . . Forward Amplifier Modules 42. . . . . . . . . . . . . . . . . . . . . . Reverse Amplifier Modules 45. . . . . . . . . . . . . . . . . . . . . . Packages 47. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FREESCALE SEMICONDUCTOR 42
WIRELESS RF PRODUCTSELECTOR GUIDE
CATV Distribution Amplifier ModulesFreescale Semiconductor Hybrids are manufactured using the latest generation technology which has set new standards forCATV system performance and reliability. These hybrids have been optimized to provide premium performance in all CATVsystems up to 152 channels.
Forward Amplifier Modules40-1000 MHz Hybrids, VCC = 24 Vdc, Class A � Silicon Bipolar
HybridMaximum Distortion Specifications
NoiseHybridGain Output 2nd Composite Cross
NoiseFigureGain
(Nom) ChannelOutputLevel
2ndOrder
CompositeTriple Beat
CrossModulation DC
Figure@ 1000(Nom)
@ChannelLoading
Level OrderTest
Triple Beat Modulation DCCurrent
@ 1000MHz@
50 MHzLoadingCapacity
TestdBc dBc
Current MHz
Product dB
p y
dBmV/CH dBc 152 CH 152 CHmATyp
dBMax
Pkg/Style
Preamplifiers
MHW9182B 18.5 152 +38 -63(40) -61 -61 210 7.5 714Y/1MHW9242A 23.2 152 +38 -61(40) -58 -59 318 8.0 1302/1
40-870 MHz High Output Hybrids, VCC = 24 Vdc, Class A � GaAs
HybridMaximum Distortion Specifications
NoiseHybridGain Output 2nd Composite Cross
NoiseFigureGain
(Nom) ChannelOutputLevel
2ndOrder
CompositeTriple Beat
CrossModulation DC
Figure@ 870(Nom)
@ChannelLoading
Level OrderTest
Triple Beat Modulation DCCurrent
@ 870MHz@
870 MHzLoadingCapacity
TestdBc dBc
Current MHz
Product dB
p y
dBmV/CH dBc 132 CH 132 CHmATyp
dBMax
Pkg/Style
Preamplifiers
MHW9146 14.3 132 +44 -60(36) -60 -55 245 5.5 1302/1MHW9186 18.5 132 +44 -60(36) -58 -52 250 5.0 1302/1MHW9206 20.2 132 +44 -59(36) -57 -51 245 4.5 1302/1MHW9236 23.8 132 +44 -60(36) -60 -50 255 6.5 1302/1MHW9276 27.9 132 +44 -60(36) -60 -53 250 6.5 1302/1
Power Doublers
MHW9187 20 132 +48 -62(34) -56 -55 425 4.5 1302/1MHW8188A★ 20.3 112 +48 -64(34) -58* -56* 425 4.5 (Typ) 1302/1MHW9188 20.3 132 +48 -62(34) -56 -55 425 4.5 1302/1MHW9188A★ 20.3 132 +48 -62(34) -56 -55 425 5.0 1302/1MHW9189(35) 20.3 132 +48 -62(34) -56 -55 425 4.5 1302/2MHW9189A★ 20.3 132 +48 -62(34) -56 -55 425 5.0 1302/2MHW8207A★ 21.3 112 +48 -62(34) -57* -55* 425 4.5 (Typ) 1302/2MHW9207A★ 21.3 132 +48 -62(34) -56 -55 425 5.0 1302/2MHW8227A★ 22.1 112 +48 -64(34) -58* -56* 425 4.5 (Typ) 1302/1MHW9227 22.1 132 +48 -62(34) -56 -55 425 4.5 1302/1MHW9227A★ 22.1 132 +48 -62(34) -56 -55 425 4.5 1302/1MHW8247A★ 24.9 112 +48 -62(34) -57* -55* 440 6.0 (Typ) 1302/1MHW9247 24.9 132 +48 -62(34) -56 -54 440 7.0 1302/1MHW9247A★ 24.9 132 +48 -62(34) -56 -54 440 7.0 1302/1MHW8267A★ 27.6 112 +48 -62(34) -57* -55* 440 6.0 (Typ) 1302/1MHW9267 27.6 132 +48 -60(34) -56 -54 440 7.0 1302/1MHW9267A★ 27.6 132 +48 -60(34) -56 -54 440 7.0 1302/1
*112 CH *112 CH
(34)Composite 2nd Order; Vout = +48 dBmV/ch(35)Mirror image of MHW9188(36)Composite 2nd Order; Vout = +44 dBmV/ch(40)Composite 2nd Order; Vout = +38 dBmV/ch
★New Product
43FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CATV Distribution: Forward Amplifier Modules (continued)
40-870 MHz High Output MMIC, VCC = 24 Vdc, Class A � GaAs
HybridMaximum Distortion Specifications
NoiseHybridGain Output 2nd Composite Cross
NoiseFigureGain
(Nom) ChannelOutputLevel
2ndOrder
CompositeTriple Beat
CrossModulation DC
Figure@ 870(Nom)
@ChannelLoading
Level OrderTest
Triple Beat Modulation DCCurrent
@ 870MHz@
870 MHzLoadingCapacity
TestdBc dBc
Current MHz
Product dB
p y
dBmV/CH dBc 132 CH 132 CHmATyp
dBMax
Pkg/Style
Preamplifiers
MMG1001R2(18e) 19 132 +44 -58 -56 -52 250 5.0 978/�
Power Doublers
MMG2001R2(18e) 21 132 +48 -60 -54 -53 425 4.5 978/�
40-870 MHz Hybrids, VCC = 24 Vdc, Class A � Silicon Bipolar
HybridMaximum Distortion Specifications
NoiseHybridGain Output 2nd Composite Cross
NoiseFigureGain
(Nom) ChannelOutputLevel
2ndOrder
CompositeTriple Beat
CrossModulation DC
Figure@ 870(Nom)
@ChannelLoading
Level OrderTest
Triple Beat Modulation DCCurrent
@ 870MHz@
870 MHzLoadingCapacity
TestdBc dBc
Current
A dB Pk /Product dB
p y
dBmV/CH dBc 128 CH 128 CHmATyp
dBMax
Pkg/Style
Preamplifiers
MHW8202B 20.9 128 +38 -66(40) -63 -62 220 7.0 1302/1MHW8272A 27.2 128 +38 -64(40) -64 -62 310 7.0 1302/1
40-860 MHz Hybrids, VCC = 24 Vdc, Class A � Silicon Bipolar
Maximum Distortion Specifications
HybridG i
Cross NoiseFi
yGain
(Nom) ChannelOutputLevel
2ndOrder
CompositeTriple Beat
ModulationFM = 55 MHz DC
Figure@ 860(Nom)
@ChannelLoading
Level OrderTest
Triple Beat FM = 55 MHz DCCurrent
@ 860MHz@
50 MHzLoadingCapacity
TestdBc dBc
Current
A
MHz
dB Pk /Product dB
p y
dBmV/CH dBc 128 CH 128 CHmATyp
dBMax
Pkg/Style
Preamplifiers
MHW8182B 18.5 128 +38 -64(40) -66 -65 220 7.5 714Y/1MHW8222B 21.9 128 +38 -60(40) -64 -63 220 7.0 1302/1MHW8242A 24 128 +38 -62(40) -64 -62 318 7.5 1302/1MHW8342★ 34 132 +44 -44(36) -46* -50* 325 6.5* 1302/1
*132 CH *132 CH *@ 870 MHz
Power Doublers
MHW8185L(21) 18.5 128 +40 -62(39) -63 -64 365 8.5* 714Y/1MHW8185 18.8 128 +40 -62(39) -64 -64 400 8.0 714Y/1MHW8205L(22) 19.5 128 +40 -60(39) -63 -64 365 8.5* 714Y/1MHW8205 19.8 128 +40 -60(39) -63 -64 400 8.0 714Y/1
*@ 870 MHz
(18)Tape and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units;
g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units;
o) R6 = 150 units; p) R5 = 50 units.(21)Low DC Current Version of MHW8185; Typical ICC @ Vdc = 24 V is 365 mA.(22)Low DC Current Version of MHW8205; Typical ICC @ Vdc = 24 V is 365 mA.(36)Composite 2nd Order; Vout = +44 dBmV/ch(39)Composite 2nd Order; Vout = +40 dBmV/ch(40)Composite 2nd Order; Vout = +38 dBmV/ch
★New Product
FREESCALE SEMICONDUCTOR 44
WIRELESS RF PRODUCTSELECTOR GUIDE
CATV Distribution: Forward Amplifier Modules (continued)
40-750 MHz Hybrids, VCC = 24 Vdc, Class A � Silicon Bipolar
Maximum Distortion Specifications
HybridG i
Cross NoiseFi
yGain
(Nom) ChannelOutputLevel
2ndOrder
CompositeTriple Beat
ModulationFM = 55 MHz DC
Figure@ 750(Nom)
@ChannelLoading
Level OrderTest
Triple Beat FM = 55 MHz DCCurrent
@ 750MHz@
50 MHzLoadingCapacity
TestdBc dBc
Current
A
MHz
dB Pk /Product dB
p y
dBmV/CH dBc 110 CH 110 CHmATyp
dBMax
Pkg/Style
Preamplifiers
MHW7182B 18.5 110 +40 -63(39) -66 -64 220 6.5 714Y/1MHW7222B 21.9 110 +40 -60(39) -61 -60 220 6.5 1302/1MHW7242A 24 110 +40 -62(39) -63 -61 318 7.0 1302/1MHW7272A 27.2 110 +40 -64(39) -64 -60 310 6.5 1302/1MHW7292A 29 110 +40 -60(39) -60 -60 310 6.5* 1302/1MHW7342 ★ 34 112 +44 -50(36) -50 -53 325 6.0 1302/1
*@ 770 MHz
Power Doublers
MHW7185CL 18.5 110 +44 -64(36) -61 -63 370 7.5 714Y/1MHW7185C 18.8 110 +44 -64(36) -62 -63 400 7.5 714Y/1MHW7205CL 19.5 110 +44 -63(36) -61 -62 365 7.5 714Y/1MHW7205C 19.8 110 +44 -63(36) -61 -62 400 7.5 714Y/1
40-550 MHz Hybrids, VCC = 24 Vdc, Class A � Silicon Bipolar
HybridMaximum Distortion Specifications
NoiseHybridGain Output 2nd Composite Cross
NoiseFigureGain
(Nom) ChannelOutputLevel
2ndOrder
CompositeTriple Beat
CrossModulation DC
Figure@ 550(Nom)
@ChannelLoading
Level OrderTest
Triple Beat ModulationFM = 55 MHz
DCCurrent
@ 550MHz@
50 MHzLoadingCapacity
TestdBc
FM = 55 MHzdBc
Current
A dB Pk /Product dB
p y
dBmV/CH dBc 77 CH 77 CHmATyp
dBMax
Pkg/Style
Forward Amplifiers
MHW6342T 34.5 77 +44 -57(36) -57 -57 310 6.5 1302/1
(36)Composite 2nd Order; Vout = +44 dBmV/ch(39)Composite 2nd Order; Vout = +40 dBmV/ch
★New Product
45FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
Reverse Amplifier Modules5 -200 MHz Hybrids, VCC = 24 Vdc, Class A � Silicon Bipolar
H b idMaximum Distortion Specifications
HybridGain
Composite Cross NoiseGain(Nom) Channel Output 2nd
CompositeTriple Beat
CrossModulation
NoiseFigure(Nom)
@ChannelLoading
OutputLevel
2ndOrder
Triple Beat ModulationDC
Figure@ 175@
10 MHzLoadingCapacity
Level OrderTest dBc dBc
DCCurrent
@MHz
Product
10 MHz
dB
Capacity
dBmV/CH
Test
dBc22CH
26CH
22CH
26CH
mATyp
dBMax
Pkg/Style
MHW1244 24 22, 26 +50 -72(30) -68 -67.5(19) -61 -61(19) 210 5.0 1302/1MHW1346 ★ 35* 22, 26 +50 -72(31)* -68 -70(19) -60 -63(19) 325 5.0* 1302/1
*5 MHz *22 CH *@ 200 MHz
Low Current Amplifiers � 5 -200 MHz Hybrids, VCC = 24 Vdc, Class A � Silicon Bipolar
H b idMaximum Distortion Specifications
HybridGain
2nd Composite Cross NoiseGain(Nom) Channel Output
2ndOrder Test
CompositeTriple Beat
CrossModulation
NoiseFigure(Nom)
@ChannelLoading
OutputLevel
Order Test Triple Beat ModulationDC
Figure@ 200@
5 MHzLoadingCapacity
LeveldBc dBc dBc
DCCurrent
@MHz
Product
5 MHz
dB
Capacity
dBmV/CH
6CH
10CH
6CH
10CH
6CH
10CH
mATyp
dBMax
Pkg/Style
MHW1223LA 22.7 6,10 +50 -68 -65 -75 -66 -65 -60 95 7.0 1302/1MHW1253LA 25.5 6,10 +50 -68 -66 -75 -66 -65 -61 95 6.5 1302/1MHW1303LA 30.8 6,10 +50 -68 -65 -74 -64 -64 -58 95 5.7 1302/1
Low Current Amplifiers � 5 -150 MHz Hybrids, VCC = 24 Vdc, Class A � Silicon Bipolar
H b idMaximum Distortion Specifications
HybridGain
2nd Composite Cross NoiseGain(Nom) Channel Output
2ndOrder Test
CompositeTriple Beat
CrossModulation
NoiseFigure(Nom)
@ChannelLoading
OutputLevel
Order Test Triple Beat ModulationDC
Figure@ 150@
5 MHzLoadingCapacity
LeveldBc dBc dBc
DCCurrent
@MHz
Product
5 MHz
dB
Capacity
dBmV/CH
6CH
10CH
6CH
10CH
6CH
10CH
mATyp
dBMax
Pkg/Style
MHW1353LA 35.2 6,10 +50 -68 -65 -73 -62 -63 -57 95 5.4 1302/1
Low Current Amplifiers � 5 -65 MHz Hybrids, VCC = 24 Vdc, Class A � Silicon Bipolar
H b idMaximum Distortion Specifications
HybridGain
2nd Composite Cross NoiseGain(Nom) Channel Output
2ndOrder Test
CompositeTriple Beat
CrossModulation
NoiseFigure(Nom)
@ChannelLoading
OutputLevel
Order Test Triple Beat ModulationDC
Figure@ 65@
5 MHzLoadingCapacity
LeveldBc dBc dBc
DCCurrent
@MHz
Product
5 MHz
dB
Capacity
dBmV/CH
6CH
10CH
6CH
10CH
6CH
10CH
mATyp
dBMax
Pkg/Style
MHW1224LA 22.7 6,10 +50 -68 -65 -75 -66 -65 -60 95 7.0 1302/1MHW1254LA 25.5 6,10 +50 -68 -66 -75 -66 -65 -61 95 6.5 1302/1MHW1304LA 30.8 6,10 +50 -68 -65 -74 -64 -64 -58 95 5.7 1302/1MHW1354LA 35.2 6,10 +50 -68 -65 -73 -62 -63 -57 95 5.4 1302/1
(19)Typical(30)Channels 2 and A @ 7(31)26 Ch. Composite Second Order Test
★New Product
FREESCALE SEMICONDUCTOR 46
WIRELESS RF PRODUCTSELECTOR GUIDE
CATV Distribution: Reverse Amplifier Modules (continued)
Low Current Amplifiers � 5-50 MHz Hybrids, VCC = 24 Vdc, Class A � Silicon Bipolar
HybridMaximum Distortion Specifications
NoiseHybridGain Output 2nd Composite Cross
NoiseFigureGain
(Nom) ChannelOutputLevel
2ndOrder
CompositeTriple Beat
CrossModulation DC
Figure@ 50(Nom)
@ChannelLoading
Level OrderTest(30)
Triple Beat Modulation DCCurrent
@ 50MHz@
5 MHzLoadingCapacity
Test( )
dBc dBcCurrent MHz
Product dB
p y
dBmV/CH dBc 3 CH 4 CHmATyp
dBMax
Pkg/Style
MHW1254L 25 4 +50 -70 -70 -62 115 4.5 1302/1
(30)Channels 2 and A @ 7
47FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CATV Distribution Amplifier Module Packages
CASE 714Y
STYLE 1
CASE 1302
STYLE 1, 2
SCALE 1:2
FREESCALE SEMICONDUCTOR 48
WIRELESS RF PRODUCTSELECTOR GUIDE
49FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
RF and IF Tape and Reel Specifications
Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as theshipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a securecavity for the product when sealed with the �peel -back� cover tape.
• Two Reel Sizes Available (7″ and 13″)• Used for Automatic Pick and Place Feed Systems• Minimizes Product Handling• EIA 481, -1, -2• SOT-363 in 8 mm Tape• Micro-8, QFN-32, PLD-1, PLD-1.5, NI-200S, NI-200Z
in 12 mm Tape• SO-16/16L, TSSOP-16 in 16 mm Tape
• SO-20L, SO-28L, TO-270-2 in 24 mm Tape• NI-360, NI-360S, NI-400, NI-400S, NI-600,
TO-270 WB-4 in 32 mm Tape• TO-272-2, TO-272-6 Wrap, TO-272-6, TO-272-8
Wrap, TO-272-8, TO-272 WB-4, TO-272 WB-16 in 44 mm Tape
• NI-780, NI-780S, NI-860, NI-880, NI-880S, NI-1230 in56 mm Tape
Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individualreels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size isone full reel for each line item, and orders are required to be in increments of the single reel quantity.
Micro-8SO-16/16L
PFP-16
PLD-1 PLD-1.5SO-20L, SO-28L
NI-200S, NI-200Z
(12 mm)
(24 mm) (12 mm) (12 mm)
(12 mm)
(16 mm)
(16 mm)
OF FEED
DIRECTION
TSSOP-16 (16 mm)
DRAINLEAD
PIN 1
GATELEAD
TO-270-2 (24 mm)
DRAINLEAD
FREESCALE SEMICONDUCTOR 50
WIRELESS RF PRODUCTSELECTOR GUIDE
OF FEED
DIRECTION
NI-600 (32 mm)
NI-360, NI-360S (32 mm) NI-400, NI-400S (32 mm)
NI-780, NI-780S (56 mm)
DRAINLEAD
DRAINLEAD
DRAINLEAD
DRAINLEAD
DRAINLEAD
TO-272 WB-4, TO-272 WB-16 (44 mm)
TO-272 WB-16 Gull (44 mm)
DRAINLEAD
DRAINLEAD
TO-272-2, TO-272-6 Wrap, TO-272-6,TO-272-8, TO-272-8 Wrap (44 mm)
TO-270 WB-4 (32 mm)
DRAINLEAD
51FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
OF FEED
DIRECTION
NI-880, NI-880S (56 mm)
NI-1230 (56 mm)
DRAINLEAD
NI-860 (56 mm)
DRAINLEAD
DRAINLEAD
FREESCALE SEMICONDUCTOR 52
WIRELESS RF PRODUCTSELECTOR GUIDE
RF and IF EMBOSSED TAPE AND REEL ORDERING INFORMATION
PackageTape Width
(mm)Pitch
mm (inch)Reel Size
mm (inch)
Devices Per Reeland Minimum
Order Quantity DeviceSuffix
Micro-8 12 8.0 ± 0.1 (.315 ± .003) 330 (13) 2,500 R2
NI-200S (458B) 12 12.0 ± 0.1 (.471 ± .004) 178 (7) 500 R1
NI-200Z (458C) 12 12.0 ± 0.1 (.471 ± .004) 178 (7) 500 R1
NI-360 (360B) 32 24.0 ± 0.1 (.945 ± .004) 330 (13) 500 R1
NI-360S (360C) 32 24.0 ± 0.1 (.945 ± .004) 330 (13) 500 R1
NI-400 (465E) 32 32.0 ± 0.1 (1.26 ± .004) 330 (13) 250 R3
NI-400S (465F) 32 32.0 ± 0.1 (1.26 ± .004) 330 (13) 250 R3
NI-600 (465D) 32 32.0 ± 0.1 (1.26 ± .004) 330 (13) 250 R3
NI-780 (465) 56 32.0 ± 0.1 (1.26 ± .004) 330 (13) 250 R3
NI-780S (465A) 56 32.0 ± 0.1 (1.26 ± .004) 330 (13) 250 R3
NI-860 (375B, 375G)NI-860 (375G)
5656
28.0 ± 0.1 (1.10 ± .004)28.0 ± 0.1 (1.10 ± .004)
330 (13)330 (13)
25050
R3R5
NI-880 (465B) 56 32.0 ± 0.1 (1.26 ± .004) 330 (13) 250 R3
NI-880S (465C) 56 32.0 ± 0.1 (1.26 ± .004) 330 (13) 250 R3
NI-1230 (375D) 56 32.0 ± 0.1 (1.26 ± .004) 330 (13) 150 R6
PLD-1 12 8.0 ± 0.1 (.315 ± .004) 178 (7) 1,000 T1
PLD-1.5 12 8.0 ± 0.1 (.315 ± .004) 178 (7) 1,000 T1
PFP-16 16 12.0 ± 0.1 (.472 ± .004) 330 (13) 1,500 R2
QFN-24 12 8.0 ± 0.1 (.315 ± .004) 178 (7) 2,500 R2
QFN-32 (5x5 mm) 12 8.0 ± 0.1 (.315 ± .004) 178 (7) 2,500 R2
SO-16/16L 16 8.0 ± 0.1 (.315 ± .004) 330 (13) 2,500 R2
SO-20L 24 12.0 ± 0.1 (.472 ± .004) 330 (13) 1,000 R2
SO-28L 24 12.0 ± 0.1 (.472 ± .004) 330 (13) 1,000 R2
SOT-363 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1
TO-270-2 (1265) 24 16.0 ± 0.1 (.631 ± .004) 330 (13) 500 R1
TO-270 WB-4 (1486) 32 24.0 ± 0.1 (.944 ± .004) 330 (13) 500 R1
TO-272-6 Wrap (1264), TO-272-6 (1264A)
44 16.0 ± 0.1 (.631 ± .004) 330 (13) 500 T1
TO-272-8 Wrap (1366),TO-272-8 (1366A)
44 20.0 ± 0.1 (.787 ± .004) 330 (13) 500 T1
TO-272-2 (1337) 44 16.0 ± 0.1 (.631 ± .004) 330 (13) 500 R1
TO-272 WB-16 (1329) 44 20.0 ± 0.1 (.788 ± .004) 330 (13) 500 R1
TO-272 WB-16 Gull(1329A)
44 16.0 ± 0.1 (.631 ± .004) 330 (13) 500 R1
TO-272 WB-4 (1484) 44 20.0 ± 0.1 (.788 ± .004) 330 (13) 500 R1
TSSOP-16 16 8.0 ± 0.1 (.315 ± .004) 330 (13) 2,500 R2
53FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS
P0K
t
B1 K0
Top Cover
Tape
Embossment
User Direction of Feed
Center Lines
of Cavity
DP2
10 Pitches Cumulative Tolerance on Tape
± 0.2 mm
(± 0.008″)
E
F W
P
B0
A0
D1
For Components
2.0 mm x 1.2 mm and Larger
* Top Cover Tape
Thickness (t1)
0.10 mm
(.004″) Max.
Embossment
Embossed Carrier
R Min
Bending Radius
Maximum Component Rotation
Typical Component
Cavity Center Line
Typical Component
Center Line
100 mm
(3.937″)
250 mm
(9.843″)
1 mm
(.039″) Max
1 mm Max
10°
Tape and Components
Shall Pass Around Radius �R"
Without Damage
Tap
e
For Machine Reference Only
Including Draft and RADII
Concentric Around B0
Camber (Top View)
Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
See
Note 1
Bar Code Label
FREESCALE SEMICONDUCTOR 54
WIRELESS RF PRODUCTSELECTOR GUIDE
DIMENSIONS
TapeSize B1 Max
D1.5�+�0.1�mm D1 E1 F K P0 P2 R Min t Max W Max
12�mm 8.2�mm
1.5�+�0.1�mm
−�0.0
( 059 004 ″ 1.5�mm�Min 1.75�±�0.1�mm 5.5�±�0.05�mm 6.4�mm�Max 4.0�±�0.1�mm 2.0�±�0.1�mm 30�mm 0.4�mm 12�±�.30�mm12�mm 8.2�mm
(.323″)(.059�+�.004 ″
−0 0)
1.5�mm�Min
(.060″)
1.75�±�0.1�mm
(.069�±�.004″)
5.5�±�0.05�mm
(.217�±�.002″)
6.4�mm�Max
(.252″)
4.0�±�0.1�mm
(.157�±�.004″)
2.0�±�0.1�mm
(.079�±�.004″)
30�mm
(1.18″)
0.4�mm
(.016″)
12�±�.30�mm
(.470�±�.012″)
16�mm 12.1�mm
(.476″)
−�0.0)(.060 ) (.069�±�.004 )
7.5�±�0.10�mm
(.295�±�.004″)
7.9�mm�Max
(.311″)
(.157�±�.004 ) (.079�±�.004 ) (1.18 ) (.016 )
16.3�mm
(.642″)
24�mm 20.1�mm
(.791″)
11.5�±�0.1�mm
(.453�±�.004″)
11.9�mm�Max
(.468″)
24.3�mm
(.957″)
32�mm 23.0�mm
(.906″)
1.5�mm�Min
(.059″)
14.2�±�0.1�mm
(.559 ±�.004″)
4.6 mm
(.181″)
NI−360/S
50�mm
(1.969″)
0.6�mm
(.024″)
32.2�mm
(1.272″)
4.3 mm
(.169″)
NI−400/S
5.34 mm
(.210″)
NI−600/S
19.7�mm
(.776″)
TO−270
WB−4
2.0�mm�Min
(.079″)
3.5 mm
(.138″)
TO−270
WB−4
32.0�mm±�
0.3�mm
(1.260±� .012″)
TO−270
WB−4
44�mm 35.0 mm
(1.378″)
11.5�±�0.1�mm
(.453�±�.004″)
15.9�mm�Max
(.625″)
2.0�±�0.15�mm
(.079�±�.006″)
44�±�.30�mm
(1.732±� .012″)(.453�±�.004 ) (.625 ) (.079�±�.006 )
24.0 mm
(.946″)
TO−272
WB−4,
TO−272
WB−16
20.2±�0.15�mm
(0.796±.006″)
2.92 mm
(.115″)
TO−272
WB−4,
TO−272
WB−16
20.0±�0.1�mm
(.788�±�.004″)
TO−272
WB−4,
TO−272
WB−16
.318 mm
(.012″)
TO−272
WB−4,
TO−272
WB−16
23.77 mm
(.936″)
TO−272
WB−16
Gull
3.20 mm
(.126″)
TO−272
WB−16 Gull
16.0±�0.1�mm
(.630�±�.004″)
TO−272
WB−16 Gull
.343 mm
(.013″)
TO−272
WB−16
Gull
56�mm 34.7 mm
(1.366″)
26.2
� ±�0.15�mm
(1.031�±�.006″)
4.5�mm
(0.177″)
NI−780/S
4.0�±�0.1�mm
(.157�±�.004″)
0.6�mm
(.024″)
56�±�.30�mm
(2.205� ±� .012″)(1.031�±�.006 )
5.0 mm
(0.197″)
NI−860
� .012 )
5.23�mm
(0.206″)
NI−880/S
41.6 mm
(1.638″)
NI−1230
5.2�mm
(0.205″)
NI−1230
Metric dimensions govern � English are in parentheses for reference only.NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max.,NOTE 1: the component cannot rotate more than 10° within the determined cavity.NOTE 2: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 52.
55FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
A
Full Radius
T Max
G
20.2 mm Min
(.795″)
1.5 mm Min
(.06″)13.0 mm ± 0.5 mm
(.512″ ± .002″)
50 mm Min
(1.969″)
Outside Dimension
Measured at Edge
Inside Dimension
Measured Near Hub
Size A Max G T Max
12 mm 330 mm(12.992″)
12.4 mm + 2.0 mm, - 0.0(.49″ + .079″, - 0.00)
18.4 mm(.72″)
16 mm 360 mm(14.173″)
16.4 mm + 2.0 mm, - 0.0(.646″ + .078″, - 0.00)
22.4 mm(.882″)
24 mm 360 mm(14.173″)
24.4 mm + 2.0 mm, - 0.0(.961″ + .070″, - 0.00)
30.4 mm(1.197″)
32 mm 360 mm(14.163″)
32.4 mm + 2.0 mm, - 0.0(1.276″+ 0.79″, - 0.00)
38.4 mm(1.512″)
44 mm 330 mm(12.992″)
44.4 mm + 2.0 mm, - 0.0(1.748″+ 0.79″, - 0.00)
50.4 mm(1.984″)
44 mmTO-272WB-4,
WB-16,WB-16
Gull
330 mm(12.992″)
45.3 mm + 0.5 mm, - 0.0(1.785″+ 0.02″, - 0.00)
50.4 mm(1.984″)
56 mm 330 mm(12.992″)
56.4 mm + 2.0 mm, - 0.0(2.220″+ 0.79″, - 0.00)
62 mm(2.441″)
Reel DimensionsMetric Dimensions Govern � English are in parentheses for reference only
FREESCALE SEMICONDUCTOR 56
WIRELESS RF PRODUCTSELECTOR GUIDE
Kraft Paper
Tape, Blue
Item 3.2
(Cathode)
Reel
Roll Pad
Container
Tape, White
Item 3.2
(Anode)
Item 3.1.1
Max Off
Alignment
E
Item 3.3.5
Both Sides0.250
Item 3.3.2
0.031
Item 3.3.5
D1 D2
A
Overall�LG
Item�3.1.2
Figure 1. Reel Packing Figure 2. Component Spacing
Optional Design
1.188
Item 3.4
3.5�Dia.
CD
Figure 3. Reel Dimensions
B
57FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
Applications and Product LiteratureApplication Notes, Engineering Bulletins and Article Reprints of special interest to designers of RF and RF/IF equipment are listedbelow. This technical documentation is available on the Freescale Semiconductor Product Sector Web site or is available throughthe Freescale Semiconductor Literature Distribution Center. Phone and fax numbers for ordering literature are listed on the backcover of this book and in our Accessing Data On- line section.
Application NotesAN211A Field Effect Transistors in Theory and PracticeAN419 UHF Amplifier Design Using Data Sheet
Design CurvesAN423 Field Effect Transistor RF Amplifier Design
TechniquesAN535 Phase-Locked -Loop Design FundamentalsAN548A Microstrip Design Techniques for UHF AmplifiersAN721 Impedance Matching Networks Applied to
RF Power TransistorsAN923 800 MHz Test Fixture DesignAN955 A Cost Effective VHF Amplifier for Land
Mobile RadiosAN1022 Mechanical and Thermal Considerations in Using
RF Linear Hybrid AmplifiersAN1024 RF Linear Hybrid AmplifiersAN1025 Reliability Considerations in Design and Use of
RF Integrated CircuitsAN1026 Extending the Range of an Intermodulation
Distortion TestAN1027 Reliability/Performance Aspects of CATV
Amplifier DesignAN1032 How Load VSWR Affects Non-Linear CircuitsAN1033 Match Impedances in Microwave AmplifiersAN1034 Three Balun Designs for Push-Pull AmplifiersAN1040 Mounting Considerations for Power
SemiconductorsAN1207 The MC145170 in Basic HF and VHF OscillatorsAN1253 An Improved PLL Design Method Without
ϖn and ζAN1526 RF Power Device Impedances: Practical
ConsiderationsAN1530 Advanced Amplifier Concept PackageAN1602 3.6 V and 4.8 V GSM/DCS1800 Dual Band PA
Application with DECT Capability Using Standard RFIC�s
AN1617 Mounting Recommendations for Copper Tungsten Flanged Transistors
AN1639 Phase Noise Measurement Using the Phase Lock Technique
AN1643 RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit
AN1670 60 Watts, GSM 900 MHz, LDMOS Two-StageAmplifier
AN1671 MC145170 PSpice Modeling KitAN1696 Broadband Intermodulation Performance
Development Using the Rohde & Schwarz Vector Network Analyzer ZVR
AN1697 GSM900/DCS/1800 Dual-Band 3.6 V PowerAmplifier Solution with Open Loop Control Scheme
AN1907 Surface Mount Solder Attach Method for theMRF9045MR1 in the TO-270 Plastic RF Package
AN1908 Solder Mounting Method for the MRF19090Sand Similar Packages
AN1923 Mounting Method with Mechanical Fastenersfor the MRF19090 and Similar Packages
AN1938 Sensitivity of High Power RF Transistors to Source and Output Loads
AN1941 Modeling Thermal Effects in RF LDMOS Transistors
AN1944 Generating Temperature -Dependent IV Curves Using ADS
AN1949 Mounting Method for the MHVIC910HR2 (PFP-16) and Similar Surface Mount Packages
AN1955 Thermal Measurement Methodology of RF PowerAmplifiers
AN1987 Quiescent Current Control for the RF IntegratedCircuit Device Family
AN4005 Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Article ReprintsAR164 Good RF Construction Practices and TechniquesAR254 Phase-Locked Loop Design ArticlesAR510 VSWR Protection of Solid State RF Power
AmplifiersAR511 Biasing Solid State Amplifiers to Linear OperationAR579 CAD of a Broadband, Class-C 65 Watt
UHF Power AmplifierAR581 Procedure Performs Thermal Measurements
on Pulsed DevicesAR612 Plastic Packages Hold Power RF MOSFETsAR624 Aluminum-Based Metallization Enhances Device
ReliabilityAR628 Impedance Measurements for High Power RF
Transistors Using the TRL MethodAR629 Digital Predistortion Techniques for RF Power
Amplifiers with CDMA Applications
FREESCALE SEMICONDUCTOR 58
WIRELESS RF PRODUCTSELECTOR GUIDE
Engineering BulletinsEB38 Measuring the Intermodulation Distortion of
Linear AmplifiersEB105 A 30 Watt, 800 MHz Amplifier DesignEB209 Mounting Method for RF Power Leadless Surface
Mount TransistorsEB211 Thermal Management and Solder Mounting
Method for the MRF286, 60 Watt Power Device in a CuW (Copper Tungsten) Base Package
EB213 Surge-Ringing Wave Clamp for GaAs CATV Module Protection
Product LiteratureDL110/D Wireless RF Product Device Data LibraryDL209/D CATV Distribution Amplifier Module
Device Data BookSG46/D Wireless RF Product Selector Guide
59FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
Case Dimensions
NOTES:1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION "F" TO CENTER OF LEADS.
STYLE 1:PIN 1. RF INPUT
2. VDD13. VDD24. RF OUTPUT
CASE: GROUND
G
W
N
L
H
R
K
J
AM0.020 (0.51) T M
M0.020 (0.51) T
1 2 3 4
FE
C
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.760 1.780 44.70
B 1.370 1.390 34.80 35.31
C 0.245 0.265 6.22 6.73
D 0.017 0.023 0.43 0.58
E 0.080 0.100 2.03 2.54
F 0.086 BSC 2.18 BSC
G 1.650 BSC 41.91 BSC
H 1.290 BSC 32.77 BSC
J 0.266 0.280 6.76 7.11
K 0.125 0.165 3.18 4.19
L 0.990 BSC 25.15 BSC
0.390 BSC 9.91 BSCN
P
0.118 0.132 3.00 3.35Q
R 0.535 0.555 13.59 14.10
S 0.445 0.465 11.30 11.81
W
45.21
CASE 301AP-02ISSUE C
BM0.020 (0.51) T M
MSM0.008 (0.20) A MT
0.090 BSC 2.29 BSC
0.008 0.013 0.20 0.33
STYLE 2:PIN 1. RF OUTPUT
2. VDD23. VDD14. RF INPUT
CASE: GROUND
STYLE 3:PIN 1. RF INPUT
2. VBIAS3. VDD4. RF OUTPUT
CASE: GROUND
D4X
Q2X
B
A
S
S
A
T
P4X
CASE 301AS-01ISSUE A
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. DIMENSION F TO CENTER OF LEADS.
STYLE 1:PIN 1. RF INPUT
2. VDD3. RF OUTPUT
CASE: GROUND
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.760 1.780 44.70 45.21
B 1.370 1.390 34.80 35.31
C 0.245 0.265 6.22 6.73
D 0.017 0.023 0.43 0.58
E 0.080 0.100 2.03 2.54
F 0.086 BSC 2.18 BSC
G 1.650 BSC 41.91 BSC
H 1.290 BSC 32.77 BSC
J 0.266 0.280 6.76 7.11
K 0.125 0.165 3.18 4.19
N 0.390 BSC 9.91 BSC
P 0.008 0.013 0.20 0.33
Q 0.118 0.132 3.00 3.35
R 0.535 0.555 13.59 14.10
S 0.445 0.465 11.30 11.81
W 0.090 BSC 2.29 BSC
G
3 PL
J
K
R
-A-
D
2 PLQ
MAM0.51 (0.020) T
1 2 3
H
W
3 PLP
EF
CSEATING
PLANE
MSM0.20 (0.008) T
-B-
MA
-S-
N
-T-
MBM0.51 (0.020) T
M0.51 (0.020) T
FREESCALE SEMICONDUCTOR 60
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 301AY-01ISSUE O
NOTES:1. CONTROLLING DIMENSION: MILLIMETER.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ANSI Y14.5M, 1982.3. DIMENSION F TO CENTER LINE OF LEADS.
0.2 (0.008) M T S M
0.51 (0.020) M T A M
R
B
G
1 2 3 4
M
E
C
SEATING PLANE
Q2X
STYLE 1:PIN 1. RF INPUT
2. VDD1 3. VDD2 4. VDD3 5. RF OUTPUT
CASE: GROUND
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 44.7 45.21 1.760 1.780
B 34.8 35.31 1.370 1.390
C 6.22 6.73 0.245 0.265
D 0.43 0.58 0.017 0.023
E 2.03 2.54 0.080 0.100
F 2.18 BSC 0.086 BSC
G 41.91 BSC 1.650 BSC
H 32.77 BSC 1.290 BSC
J 6.76 7.11 0.266 0.280
K 3.18 4.19 0.125 0.165
L 25.15 BSC 0.990 BSC
M 7.37 BSC 0.290 BSC
N 9.91 BSC 0.390 BSC
P 0.2 0.33 0.008 0.013
Q 3 3.35 0.118 0.132
R 13.59 14.1 0.535 0.555
S 11.3 11.81 0.445 0.465
W 2.29 BSC 0.090 BSC
J
K5X
5
W
NL
HD5X
A
A M
S
0.51 (0.020) M T B M
A
B S
F
T
P5X
0.51 (0.020) M T B M
61FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 318M-01ISSUE O
ÉÉÉÉÉÉÇÇÇÇÇÇ
ÉÉÉÉÉÉ
A−BM0.10 DC
A
NOTES:1. DIMENSIONS ARE IN MILLIMETERS.2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.3. DIMENSION D DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,PROTRUSIONS OR GATE BURRS SHALL NOTEXCEED 0.15mm PER END. DIMENSION E1 DOESNOT INCLUDE INTERLEAD FLASH ORPROTRUSION. INTERLEAD FLASH OR PROTRUSIONSHALL NOT EXCEED 0.15mm PER SIDE.
4. DIMENSIONS D AND E1 ARE DETERMINED AT THEOUTMOST EXTREMES OF THE PLASTIC BODYEXCLUSIVE OF MOLD FLASH, TIE BAR BURRS,GATE BURRS AND INTERLEAD FLASH, BUTINCLUDING ANY MISMATCH BETWEEN THE TOPAND BOTTOM OF PLASTIC BODY.
5. DATUMS A, B AND D TO BE DETERMINED 0.10mmFROM THE LEAD TIP.
6. TERMINAL NUMBERS ARE SHOWN FORREFERENCE ONLY.
7. THESE DIMENSIONS APPLY TO THE FLAT SECTIONOF THE LEAD BETWEEN 0.08mm AND 0.15mm FROMTHE LEAD TIP.
0.15 C
0.20 C
0.10 C
E1/2
L2
E/2
E1
VIEW CB
B
b1
c1
b
c
SECTION B-B(SEE NOTE 7)
BASE METAL
WITH PLATING
3X
�4X
E D
D
2X b
B
PIN 1 IDENTIFIERIN THIS ZONE
2X
1
3
4
2
A2A1
A
4X
SE
AT
ING
PL
AN
E
1
�4X 1
�
(L1)
C
SEATING PLANE
GAUGE PLANE
L
VIEW C
DIM MIN MAX
MILLIMETERS
A − − − 1.10
A1 0.00 0.10
A2 0.80 1.00
b 0.25 0.40
b1 0.25 0.35
B 0.55 0.70
B1 0.55 0.65
c 0.10 0.25
c1 0.08 0.20
D 2.00 BSC
E 2.10 BSC
E1 1.25 BSC
e1 1.30 BSC
e2 0.65 BSC
e3 1.15 BSC
e4 0.50 BSC
L 0.26 0.46
L1 0.425 REF
L2 0.15 BSC
� 0 8
� 4 10 1
e2
e1
e4B (
B1)
e3
� �
� �
0.15
C
2X
SOT-343
FREESCALE SEMICONDUCTOR 62
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 360B-05ISSUE FNI-360
G
E C
SEATING
PLANE
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.795 0.805 20.19 20.45
INCHES
B 0.225 0.235 5.72 5.97
C 0.125 0.175 3.18 4.45
D 0.210 0.220 5.33 5.59
E 0.055 0.065 1.40 1.65
F 0.004 0.006 0.10 0.15
G 0.562 BSC 14.28 BSC
H 0.077 0.087 1.96 2.21
K 0.220 0.250 5.59 6.35
M 0.355 0.365 9.02 9.27
Q 0.125 0.135 3.18 3.43
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
1
2
3
Q2X
MAMaaa B MT NOTES:1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R 0.227 0.233 5.77 5.92
S 0.225 0.235 5.72 5.97
N 0.357 0.363 9.07 9.22
aaa 0.005 REF 0.13 REF
bbb 0.010 REF 0.25 REF
ccc 0.015 REF 0.38 REF
MAMbbb B MT
D2XK2X
B
B(FLANGE)
HF
MAMccc B MT
MAMbbb B MT
A
M(INSULATOR)
A
T
N(LID)
MAMccc B MT
R(LID)
S(INSULATOR)
MAMaaa B MT
CASE 360C-05ISSUE DNI-360S
STYLE 1:PIN 1. DRAIN
2. GATE3. SOURCE
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.375 0.385 9.53 9.78
INCHES
B 0.225 0.235 5.72 5.97
C 0.105 0.155 2.67 3.94
D 0.210 0.220 5.33 5.59
E 0.035 0.045 0.89 1.14
F 0.004 0.006 0.10 0.15
H 0.057 1.45
K 0.085 0.115 2.16 2.92
M 0.355 0.365 9.02 9.27EC
SEATING
PLANE
2
0.067 1.70
1
NOTES:1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
S 0.225 0.235 5.72 5.97
aaa 0.005 REF 0.13 REF
bbb 0.010 REF 0.25 REF
ccc 0.015 REF 0.38 REF
HF
MAMccc B MT
R(LID)
S(INSULATOR)
MAMaaa B MT
MAMbbb B MT
D2X
B
B(FLANGE)
MAMccc B MT
MAMbbb B MT
M(INSULATOR)
T
N(LID)
A(FLANGE)
A
K2X
PIN 3
N 0.357 0.363 9.07 9.22
R 0.227 0.23 5.77 5.92
63FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 360D-02ISSUE B
G
E
N (LID)
C
SEATING
PLANE
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.795 .805 20.19 20.45
INCHES
B .225 .235 5.72 5.97
C .125 .176 3.18 4.47
D .034 .044 0.89 1.12
E .055 .065 1.40 1.65
F .004 .006 0.10 0.15
G .562 BSC 14.28 BSC
H .077 .087 1.96 2.21
K .085 .115 2.16 2.92
M .355 .365 9.02 9.27
N .355 .365 9.96 10.16
STYLE 1:PIN 1. GATE
2. DRAIN 3. SOURCE
1
2
3
Q2 x
MAMbbb B MT
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.3. DIMENSION H IS MEASURED .030 (0.762) AWAY
FROM PACKAGE BODY.
Q .125 .135 3.18 3.43
R .225 .235 5.72 5.97S .225 .235 5.72 5.97
aaa
bbb
ccc
.005 0.13
.010 0.25
.015 0.38
MAMbbb B MT
S(INSULATOR)
K2 x
B(FLANGE)
D2 x
MAMbbb B MT
B
MAMccc B MT
H
R (LID)
FMAMccc B MT
T
AA
M
MAMaaa B MT
(INSULATOR)
NI-360HF
CASE 375B-04ISSUE ENI-860
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.335 1.345 33.91 34.16
B 0.380 0.390 9.65 9.91
C 0.180 0.224 4.57 5.69
D 0.325 0.335 8.26 8.51
E 0.060 0.070 1.52 1.78
F 0.004 0.006 0.10 0.15
G 1.100 BSC 27.94 BSC
H 0.097 0.107 2.46 2.72
K 0.085 0.115 2.16 2.92
L 0.425 BSC 10.80 BSC
N 0.851 0.869 21.62 22.07
Q 0.118 0.138 3.00 3.51
R 0.395 0.405 10.03 10.29
NOTES:1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.4. RECOMMENDED BOLT CENTER DIMENSION OF
1.140 (28.96) BASED ON M3 SCREW.
STYLE 1:PIN 1. DRAIN
2. DRAIN 3. GATE 4. GATE 5. SOURCE
G
L
K
1 2
3 4
EC
SEATING
PLANE
5
4X
S 0.394 0.406 10.01 10.31
M 0.852 0.868 21.64 22.05
bbb 0.010 REF 0.25 REF
ccc 0.015 REF 0.38 REF
HF
MAMccc B MT
R(LID)
S(INSULATOR)
MAMbbb B MT
Q2X
MAMbbb B MT
MAMbbb B MT
D4X
B
A
B (FLANGE)
A
MAMccc B MT
MAMbbb B MT
M(INSULATOR) T
N(LID)
PIN 5
4
FREESCALE SEMICONDUCTOR 64
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 375D-05ISSUE DNI-1230
NOTES:1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
STYLE 1:PIN 1. DRAIN
2. DRAIN 3. GATE 4. GATE 5. SOURCE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.615 1.625 41.02 41.28
B 0.395 0.405 10.03 10.29
C 0.150 0.200 3.81 5.08
D 0.455 0.465 11.56 11.81
E 0.062 0.066 1.57 1.68
F 0.004 0.007 0.10 0.18
G 1.400 BSC 35.56 BSC
H 0.082 0.090 2.08 2.29
K 0.117 0.137 2.97 3.48
L 0.540 BSC 13.72 BSC
N 1.218 1.242 30.94 31.55
Q 0.120 0.130 3.05 3.30
R 0.355 0.365 9.01 9.27
A
G
L
DK4X
Q2X
1 2
43
M 1.219 1.241 30.96 31.52
S 0.365 0.375 9.27 9.53
aaa 0.013 REF 0.33 REF
bbb 0.010 REF 0.25 REF
ccc 0.020 REF 0.51 REFSEATING
PLANE
N
C
E
M
MAMaaa B MT
B
B(FLANGE)
HF
MAMccc B MT
R(LID)
S(INSULATOR)
MAMbbb B MT
4X
A
T
MAMbbb B MT
(INSULATOR)
MAMccc B MT
(LID)
PIN 5
MAMbbb B MT
4
65FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 375F-04ISSUE DNI-650
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
F
EH
2
3
1
R (LID)
Q2X
C
SEATING
PLANE
K4 PL
STYLE 1:PIN 1. DRAIN
2. DRAIN3. GATE4. GATE5. SOURCE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.135 1.145 28.80 29.10
B 0.225 0.235 5.72 5.97
C 0.135 0.178 3.43 4.52
D 0.210 0.220 5.33 5.59
E 0.055 0.065 1.40 1.65
F 0.004 0.006 0.11 0.15
G
H 0.077 0.087 1.96 2.21
K
L
N 0.638 0.650 16.20 16.50
Q
R 0.227 0.233 5.77 5.92
4
0.900 BSC
0.220 0.2500.260 BSC
22.86 BSC
5.59 6.356.60 BSC
G
BMbbb MLMAMbbb B MT
B
B(FLANGE)
M
N
T
MAMbbb B MT
(INSULATOR)MAMccc B MT
(LID)
A(FLANGE)
A M
S (INSULATOR)
MAMbbb B MT
MAMccc B MT
5
A
M 0.643 0.657 16.33 16.69
S 0.225 0.235 5.715 5.97
.125 .135 3.175 3.43
bbb 0.010 BSC 0.254 BSC
ccc 0.015 BSC 0.381 BSC
T
CASE 375G-04ISSUE ENI-860C3
1 2
3 4
5
D
QGL
K
2X
HE
F
CSEATING
PLANE
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.3. DIMENSION H TO BE MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.4. RECOMMENDED BOLT CENTER DIMENSION
OF 1.140 (28.96) BASED ON 3M SCREW.
4X
B
A
T
DIM
A
MIN MAX MIN MAX
MILLIMETERS
1.335 1.345 33.91 34.16
INCHES
B 0.380 0.390 9.65 9.91
C 0.180 0.224 4.57 5.69
D 0.325 0.335 8.26 8.51
E 0.060 0.070 1.52 1.78
F 0.004 0.006 0.10 0.15
G
H 0.097 0.107 2.46 2.72
K 0.135 0.165 3.43 4.19
L
N 0.851 0.869 21.62 22.07
Q 0.118 0.138 3.00 3.30
R 0.395 0.405 10.03 10.29
STYLE 1:PIN 1. DRAIN
2. DRAIN 3. GATE 4. GATE 5. SOURCE
1.100 BSC
0.425 BSC
27.94 BSC
10.8 BSC
J 0.2125 BSC 5.397 BSC
M 0.852 0.868 21.64 22.05
S 0.394 0.406 10.01 10.31
bbb 0.010 REF 0.25 REFccc 0.015 REF 0.38 REF
MAMbbb B MT
MAMbbb B MT
B (FLANGE)
4X
MAMbbb B MT
MAMccc B MT
R (LID)
S (INSULATOR)
J
MAMbbb B MT
MAMccc B MT
N(LID)
M(INSULATOR)
A
4
FREESCALE SEMICONDUCTOR 66
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 419B-01ISSUE G
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.
DIM
A
MIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B 1.15 1.350.045 0.053
C 0.80 1.100.031 0.043
D 0.10 0.300.004 0.012
G 0.65 BSC0.026 BSC
H − − − 0.10− − −0.004
J 0.10 0.250.004 0.010
K 0.10 0.300.004 0.012
N 0.20 REF0.008 REF
S 2.00 2.200.079 0.087
V 0.30 0.400.012 0.016
B0.2 (0.008) M M
1 2 3
A
GV
S
H
C
N
J
K
6 5 4
-B-
D 6 PL
S0T-363
CASE 458B-03ISSUE D
CF
E
H
K2X
1
2
3
NOTES:1. CONTROLLING DIMENSIONS: INCHES.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT
CENTERLINE UNLESS OTHERWISE NOTED.
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
D2X
Z4X
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.180 0.190 4.572 4.83
INCHES
B 0.140 0.150 3.556 3.81
C 0.082 0.116 2.083 2.946
D 0.047 0.053 1.194 1.346
E 0.004 0.010 0.102 0.254
F 0.004 0.006 0.102 0.152
H 0.025 0.031 0.635 0.787
K 0.060 0.110 1.524 2.794
M 0.197 0.203 5.004 5.156
N 0.177 0.183 4.496 4.648
R 0.147 0.153 3.734 3.886
S 0.157 0.163 3.988 4.14
Z − − − 0.020 − − − 0.508
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
MAMbbb B MT
MAMccc B MT
MAMccc B MT
R (LID)
S (INSULATOR)
SEATING
PLANET
MAMccc B MT
N(LID)
A A(FLANGE)
M(INSULATOR)
MAMccc B MT
B
B(FLANGE)
NI-200S
67FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 458C-03ISSUE D
CE
K2X
1
2
3
NOTES:1. CONTROLLING DIMENSIONS: INCHES.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. DIMENSION H (PACKAGE COPLANARITY): THE
BOTTOM OF LEADS AND REFERENCE PLANE TMUST BE COPLANAR WITHIN DIMENSION H.
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
D2X
Z4X
YF
H
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.180 0.190 4.572 4.830
INCHES
B 0.140 0.150 3.556 3.810
C 0.082 0.116 2.083 2.946
D 0.047 0.053 1.194 1.346
E 0.004 0.010 0.102 0.254
H 0.000 0.004 0.000 0.102
F 0.004 0.006 0.102 0.152
K 0.050 0.090 1.270 2.286
M 0.197 0.203 5.004 5.156
N 0.177 0.183 4.496 4.648
R 0.147 0.153 3.734 3.886
S 0.157 0.163 3.988 4.140
Z − − − R .020 − − − R .508
MAMbbb B MT
MAMccc B MT
MAMccc B MT
R (LID)
S (INSULATOR)B
(FLANGE)
MAMccc B MT
N(LID)
SEATING
PLANETA A
(FLANGE)
M(INSULATOR)
MAMccc B MT
B
Y 0.020 0.040 0.508 1.016
bbb .010 REF 0.254 REF
ccc .015 REF 0.381 REF
NI-200Z
CASE 465-06ISSUE FNI-780
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DELETED4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.335 1.345 33.91 34.16
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
N 0.772 0.788 19.60 20.00
Q .118 .138 3.00 3.51
R 0.365 0.375 9.27 9.53
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
1
3
2
D
G
K
C
E
H
S
FS 0.365 0.375 9.27 9.52
M 0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
MAMbbb B MT
MAMbbb B MT
B
B(FLANGE)
SEATING
PLANE
MAMccc B MT
MAMbbb B MT
A A(FLANGE)
T
N (LID)
M (INSULATOR)
MAMaaa B MT
(INSULATOR)
R
MAMccc B MT
(LID)
FREESCALE SEMICONDUCTOR 68
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 465A-06ISSUE FNI-780S
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DELETED4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.805 0.815 20.45 20.70
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.61 20.02
R 0.365 0.375 9.27 9.53
STYLE 1:PIN 1. DRAIN
2. GATE5. SOURCE
1
2
D
K
C
E
H
F3
U(FLANGE)
4X
Z(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S 0.365 0.375 9.27 9.52
N 0.772 0.788 19.61 20.02
U − − − 0.040 − − − 1.02
Z − − − 0.030 − − − 0.76
MAMbbb B MT
B
B(FLANGE)
2X
SEATING
PLANE
MAMccc B MT
MAMbbb B MT
A A(FLANGE)
T
N (LID)
M (INSULATOR)
MAMccc B MT
MAMaaa B MT
R (LID)
S (INSULATOR)
CASE 465B-03ISSUE CNI-880
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.335 1.345 33.91 34.16
B 0.535 0.545 13.6 13.8
C 0.147 0.200 3.73 5.08
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.175 0.205 4.44 5.21
N 0.871 0.889 19.30 22.60
Q .118 .138 3.00 3.51
R 0.515 0.525 13.10 13.30
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q2X
MAMbbb B MT
MAMbbb B MT
B
B(FLANGE)
SEATING
PLANE
MAMccc B MT
MAMbbb B MT
A A(FLANGE)
T
N (LID)
M (INSULATOR)
S
MAMaaa B MT
(INSULATOR)
R
MAMccc B MT
(LID)
S 0.515 0.525 13.10 13.30
M 0.872 0.888 22.15 22.55
aaa 0.007 REF 0.178 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
4
69FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 465C-02ISSUE A
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.905 0.915 22.99 23.24
B 0.535 0.545 13.60 13.80
C 0.147 0.200 3.73 5.08
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
N 0.871 0.889 19.30 22.60
R 0.515 0.525 13.10 13.30
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
MAMbbb B MT
B
B(FLANGE)
MAMccc B MT
MAMbbb B MT
A A(FLANGE)
T
N (LID)
M (INSULATOR)
MAMccc B MT
MAMaaa B MT
R (LID)
S (INSULATOR)
S 0.515 0.525 13.10 13.30
M 0.872 0.888 22.15 22.55
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.007 REF 0.178 REF
NI-880S
CASE 465D-05ISSUE DNI-600
D
G
1
2
3
K
A
C
HE SEATING
PLANE
F
NOTES:1. INTERPRET DIMENSIONS AND TOLERANCES
PER ANSI Y14.5M−1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.065 1.075 27.05 27.30
B 0.380 0.390 9.65 9.91
C 0.160 0.205 4.06 5.21
D 0.425 0.435 10.80 11.05
E 0.060 0.070 1.52 1.78
F 0.004 0.006 0.10 0.15
G 0.870 BSC 22.10 BSC
H 0.096 0.106 2.44 2.69
K 0.190 0.223 4.83 5.66
M 0.594 0.606 15.09 15.39
Q 0.124 0.130 3.15 3.30
R 0.394 0.404 10.01 10.26
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
Q2X
MAMbbb B MT
MAMbbb B MT
B
B(FLANGE)
MAMccc B MT
MAMbbb B MT
A
T
N (LID)
M (INSULATOR)
S
MAMaaa B MT
(INSULATOR)
R
MAMccc B MT
(LID)S 0.395 0.405 10.03 10.29
N 0.591 0.601 15.01 15.27
aaa 0.005 REF 0.13 REF
bbb 0.010 REF 0.25 REF
ccc 0.015 REF 0.38 REF
FREESCALE SEMICONDUCTOR 70
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 465E-04ISSUE ENI-400
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005(1.52±0.13) x 45° CHAMFER.
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
SEATING
PLANE
2X D
N (LID)
ER (LID)
F
2X K
A
T
C
MBMbbb A MT
H
B
B
G
A
MAMccc B MT
MAMbbb B MT
1
2
3
2X Q
M(INSULATOR)
S(INSULATOR)
MAMccc B MT
MAMaaa B MT
MAMaaa B MT
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.795 .805 20.19 20.44
INCHES
B .380 .390 9.65 9.9
C .125 .163 3.17 4.14
D .275 .285 6.98 7.24
E .035 .045 0.89 1.14
F .004 .006 0.10 0.15
G
H .057 .067 1.45 1.7
K .092 .122 2.33 3.1
M .395 .405 10 10.3
N .395 .405 10 10.3
Q .120 .130 3.05 3.3
R .395 .405 10 10.3
S .395 .405 10 10.3
aaa
bbb
ccc
.600 BSC 15.24 BSC
.005 BSC 0.127 BSC
.010 BSC 0.254 BSC
.015 BSC 0.381 BSC
SEE NOTE 4
CASE 465F-04ISSUE CNI-400S
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
1
SEATING
PLANE
2
E F
2X K
MAMbbb B MT
A T
C
H
B
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.395 .405 10.03 10.29
INCHES
B .395 .405 10.03 10.29
C .125 .163 3.18 4.14
D .275 .285 6.98 7.24
E .035 .045 0.89 1.14
F .004 .006 0.10 0.15
H .057 .067 1.45 1.70
K .092 .122 2.34 3.10
M .395 .405 10.03 10.29
S .395 .405 10.03 10.29
aaa .005 REF 0.127 REF
2X D
MAMccc B MT
bbb .010 REF 0.254 REFccc .015 REF 0.38 REF
N .395 .405 10.03 10.29
R .395 .405 10.03 10.29
MAMccc B MT
MAMaaa B MT
N (LID)
M (INSULATOR)
(FLANGE)
3
B(FLANGE)
R (LID)
S (INSULATOR)
MAMaaa B MT
71FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 466-03ISSUE CPLD-1.5PLASTIC
0.115
2.92
0.020
0.51
0.115
2.92
mm
inches
0.095
2.41
0.146
3.71
SOLDER FOOTPRINT
NOTES:1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.2. CONTROLLING DIMENSION: INCH3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.255 0.265 6.48 6.73
B 0.225 0.235 5.72 5.97
C 0.065 0.072 1.65 1.83
D 0.130 0.150 3.30 3.81
E 0.021 0.026 0.53 0.66
F 0.026 0.044 0.66 1.12
G 0.050 0.070 1.27 1.78
H 0.045 0.063 1.14 1.60
K 0.273 0.285 6.93 7.24
L 0.245 0.255 6.22 6.48
N 0.230 0.240 5.84 6.10
P 0.000 0.008 0.00 0.20
Q 0.055 0.063 1.40 1.60
R 0.200 0.210 5.08 5.33
S 0.006 0.012 0.15 0.31
U 0.006 0.012 0.15 0.31
ZONE V 0.000 0.021 0.00 0.53
ZONE W 0.000 0.010 0.00 0.25
ZONE X 0.000 0.010 0.00 0.25
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE 4. SOURCE
J 0.160 0.180 4.06 4.57
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
A
B D
F
LR
3
4
21
KN
ZONE V
ZONE W
ZONE XGS
HU
�10 DRAFT
P
CE
0.35 (0.89) X 45 5�
Y Y
Q
VIEW Y-Y
� �
4
21
3
FREESCALE SEMICONDUCTOR 72
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 648-08ISSUE RDIP-16
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.5. ROUNDED CORNERS OPTIONAL.
-A-
B
F C
S
HG
D
J
L
M
16 PL
SEATING
1 8
916
K
PLANE-T-
MAM0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.740 0.770 18.80 19.55
B 0.250 0.270 6.35 6.85
C 0.145 0.175 3.69 4.44
D 0.015 0.021 0.39 0.53
F 0.040 0.70 1.02 1.77
G 0.100 BSC 2.54 BSC
H 0.050 BSC 1.27 BSC
J 0.008 0.015 0.21 0.38
K 0.110 0.130 2.80 3.30
L 0.295 0.305 7.50 7.74
M 0 10 0 10
S 0.020 0.040 0.51 1.01����
73FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 714Y-04ISSUE E
2
NOTES:1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.2. CONTROLLING DIMENSION: INCH.
STYLE 1:PIN 1. RF INPUT
2. GROUND3. GROUND4. DELETED5. VDC6. DELETED7. GROUND8. GROUND9. RF OUTPUT
1 5 8 9
1.085 MAX
1.500
.1682X
4X
2X
3 7
A1.775 MAX
F
Z
.156
.250MAX
.600MAX
.148
AM0.010 T F
.325
.300
T
.165
.0227X
.510
.465
.840MAX
.018
EM0.010 T A
.100.163
2X .152
AM0.010 T F
.200
.400
1.000
#6-32 UNC-2B
AM0.010 Z T
E
.156
.355
.315.435MIN
FREESCALE SEMICONDUCTOR 74
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 751B-05ISSUE JSO-16
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.127 (0.005) TOTALIN EXCESS OF THE D DIMENSION ATMAXIMUM MATERIAL CONDITION.
1 8
16 9
SEATING
PLANE
F
JM
R X 45�
G
8 PLP-B-
-A-
M0.25 (0.010) B S
-T-
D
K
C
16 PL
SBM0.25 (0.010) A ST
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.80 10.00 0.386 0.393
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27 BSC 0.050 BSC
J 0.19 0.25 0.008 0.009
K 0.10 0.25 0.004 0.009
M 0 7 0 7
P 5.80 6.20 0.229 0.244
R 0.25 0.50 0.010 0.019
� � � �
20
1
11
10
B20X
H10X
C
L
18X A1
A
SEATING
PLANE
h X 45�
CASE 751D-06ISSUE G
E
D
M0.25 MB
M0.25 A BT
eT
B
A
DIM MIN MAX
MILLIMETERS
A 2.35 2.65
A1 0.10 0.25
B 0.35 0.49
C 0.23 0.32
D 12.65 12.95
E 7.40 7.60
e 1.27 BSC
H 10.05 10.55
h 0.25 0.75
L 0.40 1.00
� 0 7
NOTES:1. DIMENSIONS ARE IN MILLIMETERS.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION SHALLBE 0.13 TOTAL IN EXCESS OF B DIMENSION ATMAXIMUM MATERIAL CONDITION.
� �
M
SO-20L
75FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
A1
CASE 751F-05ISSUE F
1
15
14
28
BSAM0.025 B SC
M0.
25B
M
SEATING
PLANE
A
NOTES:1. DIMENSIONS ARE IN MILLIMETERS.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSIONS.4. MAXIMUM MOLD PROTRUSION 0.015 PER SIDE.5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.13 TOTAL IN EXCESSOF B DIMENSION AT MAXIMUM MATERIALCONDITION.
DIM MIN MAX
MILLIMETERS
A 2.35 2.65
A1 0.13 0.29
B 0.35 0.49
C 0.23 0.32
D 17.80 18.05
E 7.40 7.60
e 1.27 BSC
H 10.05 10.55
L 0.41 0.90
� 0 8 � �
L
�
C
PIN 1 IDENT
A
B
DE H
e
0.10
C
SO-28L
CASE 751G-04ISSUE C
D
14X
B16X
SEATING
PLANE
AM0.25 BT
16 9
81
h X 45�
MBM0.25
H8X
E
B
A
eT
A1
A
L
C
NOTES:1. DIMENSIONS ARE IN MILLIMETERS.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. DIMENSIONS D AND E DO NOT INLCUDE MOLD
PROTRUSION.4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.13 TOTAL IN EXCESSOF THE B DIMENSION AT MAXIMUM MATERIALCONDITION.
DIM MIN MAX
MILLIMETERS
A 2.35 2.65
A1 0.10 0.25
B 0.35 0.49
C 0.23 0.32
D 10.15 10.45
E 7.40 7.60
e 1.27 BSC
H 10.05 10.55
h 0.25 0.75
L 0.40 1.00
0 7 ��M
M
SO-16W
FREESCALE SEMICONDUCTOR 76
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 948C-03ISSUE B
A
B
PIN 1IDENTIFICATION
L
1 8
916
D
C
SEATING
G H
F
M
DIM
A
MIN MAX MIN MAX
INCHES
− − − 5.10 − − − 0.200
MILLIMETERS
B 4.30 4.50 0.169 0.177
C − − − 1.20 − − − 0047
D 0.05 0.25 0.002 0.010
F 0.45 0.55 0.018 0.022
G 0.65 BSC 0.026 BSC
H 0.22 0.23 0.009 0.010
J 0.09 0.24 0.004 0.009
K 0.16 0.32 0.006 0.013
L 6.30 6.50 0.248 0.256
M 0 10 0 10
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.MOLD FLASH OR GATE BURRS SHALL NOTEXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEADFLASH OR PROTRUSION. INTERLEAD FLASHOR PROTRUSION SHALL NOT EXCEED 0.25(0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.08 (0.003) TOTALEXCESS OF THE K DIMENSION AT MAXIMUMMATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FORREFERENCE ONLY.
7. DIMENSIONS A AND B ARE TO BE DETERMINEDAT DATUM PLANE −U−.
° ° ° °
J1 0.09 0.18 0.004 0.007
K1 0.16 0.26 0.006 0.010
KK1
J
J1
SECTION A-A
A
A
16x REFK
0.100 (0.004) M
0.200 (0.008) M T
PLANE
-P-
-T-
-U-
TSSOP-16
77FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 978-03ISSUE BPFP-16
PLASTIC
DIM MIN MAX
MILLIMETERS
A 2.000 2.300
A1 0.025 0.100
A2 1.950 2.100
D 6.950 7.100
D1 4.372 5.180
E 8.850 9.150
E1 6.950 7.100
E2 4.372 5.180
L 0.466 0.720
L1 0.250 BSC
b 0.300 0.432
b1 0.300 0.375
c 0.180 0.279
c1 0.180 0.230
e 0.800 BSC
h − − − 0.600
� 0 7
aaa 0.200
bbb 0.200
ccc 0.100
NOTES:1. CONTROLLING DIMENSION: MILLIMETER.2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEADWHERE THE LEAD EXITS THE PLASTIC BODY ATTHE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLDPROTRUSION. ALLOWABLE PROTRUSION IS0.250 PER SIDE. DIMENSIONS D AND E1 DOINCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION IS 0.127 TOTAL IN EXCESS OF THEb DIMENSION AT MAXIMUM MATERIALCONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED ATDATUM PLANE −H−.
BOTTOM VIEW
D1
E2
16
98
1
� �
e/2
SBMbbb C
D
X 45�
he
14 x
E1
8X E
A2A
SEATING
PLANE
DATUM
PLANE
GAUGE
L1
PLANE
1.000
LW
W
0.039
A1
ccc C
DETAIL Y
SECT W-W
c c1
b1
b
ÇÇÇÇÇÇÇÇÇÉÉ
SAMaaa C
�
A
B
H
C
Y
FREESCALE SEMICONDUCTOR 78
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
TO-272-6 Wrap
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
CASE 1264-09ISSUE J
NOTES:1. CONTROLLING DIMENSION: INCH .2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERETHE LEAD EXITS THE PLASTIC BODY AT THETOP OF THE PARTING LINE.
4. DIMENSION D AND E1 DO NOT INCLUDE MOLDPROTRUSION. ALLOWABLE PROTRUSION IS0.006 PER SIDE. DIMENSION D AND E1 DOINCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS b1 AND b3 DO NOT INCLUDEDAMBAR PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.005 TOTAL IN EXCESSOF THE b1 AND b2 DIMENSIONS AT MAXIMUMMATERIAL CONDITION.
6. CROSSHATCHING REPRESENTS THE EXPOSEDAREA OF THE HEAT SLUG.
L A1
�
c1
H
D
C
A
B
Maaa D
SEATING
PLANE
DATUM
PLANE
SEATING
PLANE
2X b1
AE1
r1
DRAIN ID
e4X
D
4X b2
D1
A
Maaa D A
Maaa D A
E
DRAIN ID
YY
A2
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.098 0.108 2.49 2.74
INCHES
A1 0.000 0.004 0.00 0.10
A2 0.100 0.104 2.54 2.64
D 0.928 0.932 23.57 23.67
D1 0.806 0.814 20.47 20.68
E 0.296 0.304 7.52 7.72
E1 0.248 0.252 6.30 6.40
L 0.060 0.070 1.52 1.78
b1 0.193 0.199 4.90 5.05
b2 0.078 0.084 1.98 2.13
c1 0.007 0.011 0.18 0.28
e
r1 0.063 0.068 1.60 1.73
0 6 0 6
aaa
1
2
3
4
5
6
3
2
1
6
5
4
VIEW Y-Y
0.193 BSC
�
0.004� �
4.90 BSC
0.10� �
STYLE 1:PIN 1. SOURCE (COMMON)
2. DRAIN3. SOURCE (COMMON)4. SOURCE (COMMON)5. GATE6. SOURCE (COMMON)
4X
b3
b3 0.088 0.094 2.24 2.39
NOTE 6
E2
E2
E2 0.241 0.245 6.12 6.22
PLASTIC
79FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 1264A-02ISSUE B
TO-272-6
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS0.006 PER SIDE. DIMENSIONS D AND E1 DOINCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.
4. DIMENSIONS b1 AND b3 DO NOT INCLUDEDAMBAR PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.005 TOTAL IN EXCESSOF THE b1 AND b2 DIMENSIONS AT MAXIMUMMATERIAL CONDITION.
5. CROSSHATCHING REPRESENTS THE EXPOSEDAREA OF THE HEAT SLUG.
6. DIMENSION A2 APPLIES WITHIN ZONE J ONLY.
D
A
B
Maaa D
SEATING
PLANE
2X b1
AE1
DRAIN ID
e4X
D
4X b2
D1
A
Maaa D A
Maaa D A
E
DRAIN ID
YY
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.098 0.106 2.49 2.69
INCHES
A1 0.038 0.044 0.96 1.12
D 0.926 0.934 23.52 23.72
D1
D2
E 0.492 0.500 12.50 12.70
E1 0.246 0.254 6.25 6.45
E2
P 0.126 0.134 3.20 3.40
b1 0.193 0.199 4.90 5.05
b3 0.088 0.094 2.24 2.39
e
c1 0.007 0.011 0.178 0.279
bbb
1
2
3
4
5
6
3
2
1
6
5
4
VIEW Y-Y
0.193 BSC
0.008
4.90 BSC
0.20
STYLE 1:PIN 1. SOURCE (COMMON)
2. DRAIN3. SOURCE (COMMON)4. SOURCE (COMMON)5. GATE6. SOURCE (COMMON)
4X
b3
b2 0.078 0.084 1.98 2.13
NOTE 5
aaa 0.004 0.10
0.170 BSC 4.32 BSC
0.608 BSC 15.44 BSC0.810 BSC 20.57 BSC
D2
E2
Abbb BC
A1
c1
2X PMaaa D A B
ZONE "J"
F
F 0.025 BSC 0.64 BSC
A2 0.040 0.042 1.02 1.07
A26
PLASTIC
FREESCALE SEMICONDUCTOR 80
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
TO-270-2
CASE 1265-08ISSUE G
DATUM
PLANE
BOTTOM VIEW
A1
2X
E
D1
E4
E1
D2
E3
A2
EXPOSEDHEATSINK AREA
A
B
D
H
PIN ONE ID
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
D
AMaaa D
AMaaa D2Xb1
2XD3
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERETHE LEAD EXITS THE PLASTIC BODY AT THETOP OF THE PARTING LINE.
4. DIMENSIONS �D1" AND �E1" DO NOT INCLUDEMOLD PROTRUSION. ALLOWABLE PROTRUSIONIS .006 PER SIDE. DIMENSIONS �D1" AND �E1" DOINCLUDE MOLD MISMATCH AND ARE DETER−MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE .005 TOTAL IN EXCESSOF THE b1 DIMENSION AT MAXIMUM MATERIALCONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED ATDATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE �J" ONLY.8. DIMENSIONS �D" AND �E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSIONIS .003 PER SIDE. DIMENSIONS �D" AND �E2" DOINCLUDE MOLD MISMATCH AND ARE DETER−MINED AT DATUM PLANE −D−.
NOTE 7
c1F
ZONE J
E22X
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.078 .082 1.98 2.08
INCHES
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .416 .424 10.57 10.77
D1 .378 .382 9.60 9.70
D2 .290 .320 7.37 8.13
D3 .016 .024 0.41 0.61
E .436 .444 11.07 11.28
E1 .238 .242 6.04 6.15
E2 .066 .074 1.68 1.88
E3 .150 .180 3.81 4.57
E4 .058 .066 1.47 1.68
F
b1 .193 .199 4.90 5.06
c1 .007 .011 0.18 0.28
aaa
.025 BSC
.004
0.64 BSC
0.10
PIN 1PIN 2
PIN 3
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
E5
E5
E5 .231 .235 5.87 5.97
PLASTIC
81FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 1302-01ISSUE B
2
STYLE 1:PIN 1. RF INPUT
2. GROUND3. GROUND4. DELETED5. VDC6. DELETED7. GROUND8. GROUND9. RF OUTPUT
1 5 8 9
J
BS
RV
Q2X
MFM0.010 A MT
MAM0.020 T
N
G
U
C
LMAM0.010 Z T
MAM0.010 Z T
6−32UNC−2B2X
W
P
K
3 7
X
A
F
F
A
Z
Y2X
2X
D7X4X
E
E
T X
Z
NOTES:1. DIMENSIONS ARE IN INCHES.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
X
DIM
A
MIN MAX MIN MAX
MILLIMETERS
− − − 1.775 − − − 45.085
INCHES
B − − − 1.085 − − − 27.559
C − − − 0.840 − − − 21.336
D 0.015 0.021 0.381 0.533
E 0.465 0.510 11.811 12.954
F 0.300 0.325 7.62 8.255
G
J
K 0.315 0.355 8.001 9.017
L
N
P
Q 0.148 0.168 3.759 4.267
R − − − 0.600 − − − 15.24
S
U
V − − − 0.250 − − − 6.350
W 0.435 − − − 11.049 − − −
X
Y 0.152 0.163 3.861 4.140
Z 0.009 0.011 0.229 0.279
0.100 BSC
0.156 BSC
0.400 BSC
1.000 BSC
0.165 BSC
0.100 BSC
1.500 BSC
0.200 BSC
2.540 BSC
3.962 BSC
10.160 BSC
25.400 BSC
4.191 BSC
2.540 BSC
38.100 BSC
5.080 BSC
FREESCALE SEMICONDUCTOR 82
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 1311-03ISSUE E
QFN-32, 5x5 mm
N
PIN 1INDEX AREA
EXPOSED DIEATTACH PAD
2.95
25
8
1
32
3.25
32X 0.18
G
5
B
C0.1
2X
2X
C0.1
A 5
24
17
16 9
0.5
M0.1 C
M0.05 C
A B
32X0.5
C0.1 A B
C0.1 A B
M
M
VIEW M-M
NOTES:1. ALL DIMENSIONS ARE IN MILLIMETERS.2. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.3. THE COMPLETE JEDEC DESIGNATOR FOR THIS
PACKAGE IS: HF−PQFP−N.4. CORNER CHAMFER MAY NOT BE PRESENT.
DIMENSIONS OF OPTIONAL FEATURES ARE FORREFERENCE ONLY.
5. COPLANARITY APPLIES TO LEADS, CORNERLEADS, AND DIE ATTACH PAD.
6. FOR ANVIL SINGULATED QFN PACKAGES,MAXIMUM DRAFT ANGLE IS 12°.
0.25
28X
DETAIL MPIN 1 INDEX
1.0 1.00
0.05
C0.1
C0.05
C SEATING PLANE
5
DETAIL GVIEW ROTATED 90 CLOCKWISE°
(0.5)(0.25)
0.8 0.75
0.00
2.95
3.25
0.300.3
(1.73)
4
PREFERRED CORNER CONFIGURATIONDETAIL N
(0.25)
4
DETAIL NCORNER CONFIGURATION OPTION
0.60
DETAIL MBACKSIDE PIN 1 INDEX OPTION
DETAIL T
DETAIL TBACKSIDE PIN 1 INDEX OPTION
(90 )
2X
°
DETAIL MBACKSIDE PIN 1 INDEX OPTION
0.06532X
(45 )°
0.015
2X 0.390.31
0.24
0.10.0
1.6
0.4750.425
1.5 BACKSIDEPIN 1 INDEX
0.250.15R
0.600.24
DETAIL MPREFERRED BACKSIDE PIN 1 INDEX
DETAIL S
DETAIL SPREFERRED BACKSIDE PIN 1 INDEX
0.2170.137
(0.25)
0.2170.137
(0.1)
83FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
TO-272 WB-16
.224 BSC
CASE 1329-09ISSUE J
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THELEAD EXITS THE PLASTIC BODY AT THE TOP OFTHE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDEMOLD PROTRUSION. ALLOWABLE PROTRUSIONIS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"DO INCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOTINCLUDE DAMBAR PROTRUSION. ALLOWABLEDAMBAR PROTRUSION SHALL BE .005 (0.13)TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OFTHE HEAT SLUG.
7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
C
H
A
SEATING
PLANE
DATUM
PLANE
YY
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
M .600 − − − 15.24 − − −
N .270 − − − 6.86 − − −
D .928 .932 23.57 23.67
D1
E .551 .559 14.00 14.20
E1 .353 .357 8.97 9.07
b .011 .017 0.28 0.43
b1 .037 .043 0.94 1.09
b2 .037 .043 0.94 1.09
c1 .007 .011 .18 .28
e
r1 .063 .068 1.6 1.73
aaa
.054 BSC
.004
1.37 BSC
.10
e1 .040 BSC 1.02 BSC
e2 5.69 BSC
b3 .225 .231 5.72 5.87
c1
B
b3
AE1
r1
eD
4X b1
D1
E
10X b
PIN ONEINDEX
6Xe1
4Xe2
b2Maaa C A
Maaa C A
Maaa C A
Maaa C A
Maaa C A
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
M
N
VIEW Y-Y
.150 BSCe3 3.81 BSC
2Xe3
A1
A1 .038 .044 0.96 1.12
.810 BSC 20.57 BSC
NOTE 62X
B
ZONE "J"
A27
F .025 BSC 0.64 BSC
F
E1
E2 .346 .350 8.79 8.89
A2 .040 .042 1.02 1.07
E2
PLASTIC
FREESCALE SEMICONDUCTOR 84
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
TO-272 WB-16 Gull
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
.224 BSC
CASE 1329A-03ISSUE B
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THELEAD EXITS THE PLASTIC BODY AT THE TOP OFTHE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDEMOLD PROTRUSION. ALLOWABLE PROTRUSIONIS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"DO INCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOTINCLUDE DAMBAR PROTRUSION. ALLOWABLEDAMBAR PROTRUSION SHALL BE .005 (0.13)TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OFTHE HEAT SINK.
DATUM
PLANE
YY DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
M .600 − − − 15.24 − − −
N .270 − − − 6.86 − − −
D .928 .932 23.57 23.67
D1
E .429 .437 10.90 11.10
E1 .353 .357 8.97 9.07
b .011 .017 0.28 0.43
b1 .037 .043 0.94 1.09
b2 .037 .043 0.94 1.09
c1 .007 .011 .18 .28
e
r1 .063 .068 1.6 1.73
aaa
.054 BSC
.004
1.37 BSC
.10
e1 .040 BSC 1.02 BSC
e2 5.69 BSC
b3 .225 .231 5.72 5.87
B
b3
AE1
eD
4X b1
D1
E
10X b
PIN ONEINDEX
6Xe1
4Xe2
b2Maaa C A
Maaa C A
Maaa C A
Maaa C A
Maaa C A
M
N
VIEW Y-Y
.150 BSCe3 3.81 BSC
2Xe3
A1 .001 .004 0.02 0.10
L1
LA1
GAGEPLANE
t
DETAIL Y
t 2 8 2 8
L .018 .024 4.90 5.06
L1
A2 .099 .110 2.51 2.79
.01 BSC 0.25 BSC
A2
C
H
c1
A
DETAIL Y
SEATINGPLANE
° ° ° °
.810 BSC 20.57 BSC
NOTE 6
2X r1B
E2
E2
E2 .346 .350 8.79 8.89
PLASTIC
85FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
TO-272-2
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
CASE 1337-03ISSUE B
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEADWHERE THE LEAD EXITS THE PLASTIC BODY ATTHE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDEMOLD PROTRUSION. ALLOWABLE PROTRUSIONIS .006 PER SIDE. DIMENSIONS "D" AND "E1" DOINCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE .005 TOTAL IN EXCESSOF THE "b1" DIMENSION AT MAXIMUM MATERIALCONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED ATDATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
H
C
A
B
SEATING
PLANE
DATUM
PLANE
2X b1
AE1
r1
DRAINLEAD
D
D1
E
NOTE 8
YY
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .928 .932 23.57 23.67
D1
E .438 .442 11.12 11.23
E1 .248 .252 6.30 6.40
F
b1 .193
c1 .007 .011 .18
r1 .063 .068 1.60
aaa
1
VIEW Y-Y
.810 BSC
.004
20.57 BSC
.10
STYLE 1:PIN 1. DRAIN
2. GATE3. SOURCE
.025 BSC
.28
1.73
PIN 3
A1
A2
F
ZONE "J"
7
Baaa M C A
aaa M C A
2X
.199 4.90
0.64 BSC
5.05
c1
2
DRAIN ID
GATELEAD
E2
E2
E2 .241 .245 6.12 6.22
PLASTIC
FREESCALE SEMICONDUCTOR 86
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 1345-01ISSUE AQFN-12
LASER MARK FOR PIN 1IDENTIFICATION INTHIS AREA
G
1.0 1.00
0.05
3
B
C0.1
2X
2X
C0.1
A3 M
M
C0.1
C0.05
C SEATING PLANE
5
DETAIL GVIEW ROTATED 90 CLOCKWISE°
NOTES:1. DIMENSIONS ARE IN MILLIMETERS.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. THE COMPLETE JEDEC DESIGNATOR FOR THIS
PACKAGE IS: HF−PQFP−N.4. CORNER CHAMFER MAY NOT BE PRESENT.
DIMENSIONS OF OPTIONAL FEATURES ARE FORREFERENCE ONLY.
5. COPLANARITY APPLIES TO LEADS, CORNERLEADS, AND DIE ATTACH PAD.
(0.5)(0.24)
PIN 1 BACKSIDE IDENTIFIERDETAIL M
DETAIL S
DETAIL SPIN 1 BACKSIDE IDENTIFIER
(90 )
2X
2X
4
CORNER CONFIGURATIONDETAIL N
(0.18)
N
EXPOSED DIEATTACH PAD
10
3
1
12
0.95
8X 0.5
9
7
6 4
M0.1 C
M0.05 C
A B
12X 0.75
C0.1 A B
VIEW M-M
DETAIL MPIN 1 IDENTIFIER
1.25
0.951.25 C0.1 A B
0.5
12X 0.30.18
(1.177)
(45 )
0.0650.015
(R0.09)3X
4X
8X
4X
12X
°
0.8 0.75
0.00
0.390.31
0.10.0
8X (0.777)
4X (0.25)
°
87FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
TO-272-8 Wrap
CASE 1366-04ISSUE C
NOTES:1. CONTROLLING DIMENSION: INCH .2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERETHE LEAD EXITS THE PLASTIC BODY AT THETOP OF THE PARTING LINE.
4. DIMENSION D AND E1 DO NOT INCLUDE MOLDPROTRUSION. ALLOWABLE PROTRUSION IS0.006 PER SIDE. DIMENSION D AND E1 DOINCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS b1 AND b2 DO NOT INCLUDEDAMBAR PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.005 TOTAL IN EXCESSOF THE b1 AND b2 DIMENSIONS AT MAXIMUMMATERIAL CONDITION.
6. CROSSHATCHING REPRESENTS THE EXPOSEDAREA OF THE HEAT SLUG.
L A1
�
c1
D
C
A
A
Maaa D
SEATING
PLANE
SEATING
PLANE
BE1
P
e4X
D
4X b2
D1
B
Maaa D B
Maaa D A
E
YY
A2
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.098 0.108 2.49 2.74
INCHES
A1 0.000 0.004 0.00 0.10
A2 0.100 0.104 2.54 2.64
D 0.928 0.932 23.57 23.67
D1
E 0.296 0.304 7.52 7.72
E1 0.248 0.252 6.30 6.40
L 0.060 0.070 1.52 1.78
b1 0.088 0.094 2.24 2.39
b2 0.066 0.072 1.68 1.83
c1 0.007 0.011 0.178 0.279
e
e1
0 6 0 6
aaa
1
2
3
5
6
7
0.104 BSC
�
0.004� �
2.64 BSC
0.10� �
4X
b1
b3 0.067 0.073 1.70 1.85
0.810 BSC 20.57 BSC
bbb 0.008 0.20
0.210 BSC 5.33 BSC
P 0.126 0.134 3.20 3.40
D2 0.608 BSC 15.44 BSC
E2 0.170 BSC 4.32 BSC
HDATUM
PLANE
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
4
2
1
6
5
7
VIEW Y-Y
3
8
bbb C
E2
D2A
DRAIN ID
B
48
B
2X
e14X
2X
b3(b1)
STYLE 1:PIN 1. SOURCE (COMMON)
2. DRAIN3. DRAIN4. SOURCE (COMMON)5. SOURCE (COMMON)6. GATE7. GATE8. SOURCE (COMMON)
NOTE 6
E3
E3
E3 0.241 0.245 6.12 6.22
PLASTIC
FREESCALE SEMICONDUCTOR 88
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 1366A-02ISSUE A
TO-272-8
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSIONIS 0.006 PER SIDE. DIMENSIONS "D" AND "E1" DOINCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.
4. DIMENSIONS "b" AND "b1" DO NOT INCLUDEDAMBAR PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.005 TOTAL IN EXCESSOF THE "b1" AND "b2" DIMENSIONS AT MAXIMUMMATERIAL CONDITION.
5. CROSSHATCHING REPRESENTS THE EXPOSEDAREA OF THE HEAT SLUG.
6. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
A
Maaa D
B
E1
P
e4X
D
4X b2
D1
B
Maaa D B
Maaa D A
E
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.098 0.106 2.49 2.69
INCHES
A1 0.038 0.044 0.96 1.12
D 0.926 0.934 23.52 23.72
D1
E 0.492 0.500 12.50 12.70
E1 0.246 0.254 6.25 6.45
b 0.105 0.111 2.67 2.82
b1 0.088 0.094 2.24 2.39
c1 0.007 0.011 0.178 0.279
e
e1
aaa
1
2
3
5
6
7
0.104 BSC
0.004
2.64 BSC
0.10
4X
b1
b2 0.066 0.072 1.68 1.83
0.810 BSC 20.57 BSC
bbb 0.008 0.20
0.210 BSC 5.33 BSC
P 0.126 0.134 3.20 3.40
D2 0.608 BSC 15.44 BSC
E2 0.170 BSC 4.32 BSC
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
4
2
1
6
5
7
VIEW Y-Y
3
8
bbb C
E2
D2
A
DRAIN ID
B
48
B
2X
e14X
2X
b3
STYLE 1:PIN 1. SOURCE (COMMON)
2. DRAIN3. DRAIN4. SOURCE (COMMON)5. SOURCE (COMMON)6. GATE7. GATE8. SOURCE (COMMON)
NOTE 5
D
A
SEATING
PLANE
YYA1
c1
e2 0.229 BSC 5.82 BSC
b3 0.067 0.073 1.70 1.85
b4 0.077 0.083 1.96 2.11
(b1)
3X b
Maaa D B
e23X
4X
ZONE "J"
6
F
A2A2 0.040 0.042 1.02 1.07
F 0.025 BSC 0.64 BSC
b4
PLASTIC
89FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 1383-02ISSUE A
7
B
0.1
A7
NOTES:1. CONTROLLING DIMENSION: MILLIMETERS.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.3.
APPLIES TO ALL PAD LOCATIONS.
A
0
0.1
1.01 ± 0.1
0.5±0.05
03±0.05
BOTTOM VIEWB0.1 L CA
0.7 ± 0.05
2.37±0.05
0.5±0.05
0.5±0.050.8±0.05
1.2±0.05
2.9
0.97
2.4
3.152.4
1.65
1.032.8
2.4
2.55
0.07
1.02
1.77
2.52
3.15
2.2
0.3
0.7
2.24
3.15
2.215
0.5±0.05 SQ
0.8±0.05
9X
PIN ONEIDENT
1±0.05
0.5±0.05
2.45±0.052.95±0.05
7x7 mm Module
FREESCALE SEMICONDUCTOR 90
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 1404-01ISSUE OPlastic
SOT-343R
ÉÉÉÉÉÉÇÇÇÇÇÇ
ÉÉÉÉÉÉ
AM0.10 BC
A
NOTES:1. DIMENSIONS ARE IN MILLIMETERS.2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.3. DIMENSION AT DATUM A AND B DOES NOT
INCLUDE MOLD FLASH, PROTRUSIONS OR GATEBURRS.
4. DIMENSION AT DATUM A AND B ARE DETERMINEDAT THE OUTMOST EXTREMES OF THE PLASTICBODY EXCLUSIVE OF MOLD FLASH, TIE BARBURRS, GATE BURRS AND INTERLEAD FLASH, BUTINCLUDING ANY MISMATCH BETWEEN THE TOPAND BOTTOM OF PLASTIC BODY.
5. TERMINAL NUMBERS ARE SHOWN FORREFERENCE ONLY.
6. THESE DIMENSIONS APPLY TO THE FLAT SECTIONOF THE LEAD BETWEEN 0.08mm AND 0.15mm FROMTHE LEAD TIP.
0.10 C
1.15
0.15
1.3
VIEW CB
B 0.35
0.080.40
0.25
SECTION B-B(SEE NOTE 6)
BASE METAL
WITH PLATING
3X4X
2X 2 TIPS
0.35B
PIN 1 IDENTIFIERIN THIS ZONE
3
2
1
4
1.0
0.1
1.1 MAX4X
SEATING PLANE
10
(0.425)
C
SEATING PLANE
0.46/0.26
VIEW C
2.2
4°°
80
°°
4X104
°°
0.10
0.200.25
0.25
0.0
0.8
0.25
AM0.15 BC
0.65
0.5
2.0
0.65/0.55(0.70/0.55 WITH PLATING)
AM0.10 BC
1.351.15
2.11.9
91FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
B
3
3
A
2X
0.1 C
C0.1
2X
PIN 1 INDEXAREA
EXPOSED DIEATTACH PAD
10 12
6 4
9
7
1
3
0.10
8X 0.512X
9
DETAIL G
M
M
1.551.25
1.551.25
0.300.18
12X
DETAIL M
DETAIL N
PIN 1 INDEX
0.750.50
C A B
VIEW M - M
M
NOTES:1. ALL DIMENSIONS ARE IN MILLIMETERS.2. INTERPRET DIMENSIONS AND
TOLERANCES PER ASME Y14.5M, 1994.3. THE COMPLETE JEDEC DESIGNATOR FOR
THIS PACKAGE IS: HF−PQFP−N.4. FOR ANVIL SINGULATED QFN PACKAGES,
MAXIMUM DRAFT ANGLED IS 12 .5. PACKAGE WARPAGE MAX 0.05 MM.6. CORNER CHAMFER MAY NOT BE PRESENT.
DIMENSIONS OF OPTIONAL FEATURES AREFOR REFERENCE ONLY.
7. CORNER LEADS CAN BE USED FORTHERMAL OR GROUND AND ARE TIED TOTHE DIE ATTACH PAD. THESE LEADS ARENOT INCLUDED IN THE LEAD COUNT.
8. COPLANARITY APPLIES TO LEAD, CORNERLEADS, AND DIE ATTACH PAD.
9. THIS DIMENSION APPLIES TO PLATEDTERMINAL AND IS MEASURED BETWEEN0.20 MM AND 0.25 MM FROM TERMINAL TIP.
�
CASE 1483-01ISSUE OQFN 3x3 Page 1 of 3
FREESCALE SEMICONDUCTOR 92
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 1483-01ISSUE OQFN 3x3
6
DETAIL NPREFERRED CORNER CONFIGURATION
6
DETAIL NCORNER CONFIGURATION
�(45 )
(0.25) (0.25)
0.600.24
0.600.24
Page 2 of 3
8
DETAIL GVIEW ROTATED 90 CW
1.00.8
�
1.000.75
0.050.00 SEATING
PLANEC
0.1
0.05
C
C
93FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 1483-01ISSUE OQFN 3x3
Page 3 of 3
�(45 )
DETAIL MPREFERRED BACKSIDE PIN 1 INDEX
0.650.30
TIE BAR MARK OPTION7
PIN 1 ID
4X 0.230.13
4X
(0.35)
DETAIL M
BACKSIDE PIN 1 INDEX OPTION
DETAIL S
DETAIL M
BACKSIDE PIN 1 INDEX OPTION
(0.45)
PIN 1 IDR0.2
DETAIL SBACKSIDE PIN 1 INDEX
0.2170.137
(0.25)
0.2170.137
(0.1)
(0.25)
FREESCALE SEMICONDUCTOR 94
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
CASE 1484-02ISSUE A
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THELEAD EXITS THE PLASTIC BODY AT THE TOP OFTHE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDEMOLD PROTRUSION. ALLOWABLE PROTRUSIONIS .006 PER SIDE. DIMENSIONS "D" AND "E1" DOINCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE .005 TOTAL IN EXCESSOF THE "b1" DIMENSION AT MAXIMUM MATERIALCONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED ATDATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.8. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
DATUM
PLANE
YY
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
D2 .600 − − − 15.24 − − −
E2 .270 − − − 6.86 − − −
D .928 .932 23.57 23.67
D1
E .551 .559 14 14.2
E1 .353 .357 8.97 9.07
b1 .164 .170 4.17 4.32
c1 .007 .011 .18 .28
e
r1 .063 .068 1.60 1.73
aaa
.106 BSC
.004
2.69 BSC
.10
BA
E1
D
4X b1
D1
E
GATE LEAD
Maaa C A
Maaa C A
D2
E2
VIEW Y-Y
4Xe
A1 .039 .043 0.99 1.09
F
A2 .040 .042 1.02 1.07
.025 BSC 0.64 BSC
A1
C
H
c1
A
ZONE J
SEATINGPLANE
.810 BSC 20.57 BSC
PIN 5
2X r1B
DRAIN LEAD
F
A2
7
NOTE 8
1
2
3
4
STYLE 1:PIN 1. DRAIN
2. DRAIN 3. GATE 4. GATE 5. SOURCE
E3
E3
E3 .346 .350 8.79 8.89
TO-272 WB-4PLASTIC
95FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
CASE 1486-03ISSUE B
DATUM
PLANE
BOTTOM VIEW
A1
2X
D1
E3
E1
D3
E4
A2
PIN 5
NOTE 8
AB
C
H
DRAIN LEAD
D
AMaaa C
4Xb1
2XD2
NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEADWHERE THE LEAD EXITS THE PLASTIC BODY ATTHE TOP OF THE PARTING LINE.
4. DIMENSIONS �D" AND �E1" DO NOT INCLUDEMOLD PROTRUSION. ALLOWABLE PROTRUSIONIS .006 PER SIDE. DIMENSIONS �D" AND �E1" DOINCLUDE MOLD MISMATCH AND ARE DETER−MINED AT DATUM PLANE −H−.
5. DIMENSION �b1" DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE .005 TOTAL IN EXCESSOF THE �b1" DIMENSION AT MAXIMUM MATERIALCONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED ATDATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE �J" ONLY.8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
c1F
ZONE J
E22X
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .712 .720 18.08 18.29
D1 .688 .692 17.48 17.58
D2 .011 .019 0.28 0.48
D3 .600 − − − 15.24 − − −
E .551 .559 14 14.2
E1 .353 .357 8.97 9.07
E2 .132 .140 3.35 3.56
E3 .124 .132 3.15 3.35
E4 .270 − − − 6.86 − − −
F
b1 .164 .170 4.17 4.32
c1 .007 .011 0.18 0.28
e
.025 BSC
.106 BSC
0.64 BSC
2.69 BSC
1
STYLE 1:PIN 1. DRAIN
2. DRAIN 3. GATE 4. GATE 5. SOURCE
aaa .004 0.10
GATE LEAD
4Xe
2XE
SEATING
PLANE
4
23
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
NOTE 7
E5
E5
E5 .346 .350 8.79 8.89
TO-270 WB-4PLASTIC
FREESCALE SEMICONDUCTOR 96
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED .030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.948 0.958 24.08 24.33
INCHES
B 0.680 0.690 17.27 17.53
C 0.147 0.182 3.73 4.62
D 0.055 0.065 1.40 1.65
E 0.035 0.045 0.89 1.14
F
G 0.803 BSC 20.40 BSC
H
0.315 BSC 8.00J
0.057 0.067 1.45 1.70
K 0.095 0.125 2.41 3.18
M
N
Q 0.092 0.112 2.34 2.84
R 0.678 0.692 17.22 17.58
S 0.680 0.690 17.27 17.23
aaa 0.004 0.10
bbb 0.015 0.38
STYLE 1:PIN 1. GATE
2. DRAIN 3. SOURCE
CASE 1490-01ISSUE O
0.003 0.006 0.08 0.15
0.595 0.605 15.11 15.37
0.594 0.606 15.09 15.39
G
1
2
3
JB(FLANGE)
K
S (INSULATOR)
R (LID)
F
M (INSULATOR)
N (LID)
A(FLANGE)
C
HE
aaa M T A M
B
B M
D2X
Q4X
aaa M T A M B M
A
aaa M T A M B M
T SEATING
PLANE
bbb M T A M B M
aaa M T A M B M
bbb M T A M B M
HF-600
97FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
CASE DIMENSIONS (continued)
2X 4 TYPE.P.
2X R0.20
SEATING PLANE
4X
C
0.10 C
1.50
1.50
0.460.40
1.701.40
2X 4 TYP
1.351.25
0.650.55
1.651.55
CASE 1514-01 ISSUE A
°
°
3
0.15 M AC B
3 4
A4.704.40
0.600.40
B
2.702.40
1.300.70
4
5
0.480.38
0.580.48
1 2 3
0.480.38
4.503.70
2X
2X R0.15 TYP
1.871.79
0.15 M AC B
0.15 M AC B
0.20 M C B
BOTTOM VIEW
STYLE 1:PIN 4. RF INPUT
5. GROUND 6. RF OUTPUT
STYLE 2:PIN 1. GATE
2. SOURCE 3. DRAIN
NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2. ALL DIMENSIONS ARE IN MILLIMETERS.3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATEBURRS SHALL NOT EXCEED 0.5MM PER END. DIMENSION DOESNOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEADFLASH OR PROTRUSION SHALL NOT EXCEED 0.5MM PER SIDE.
4. DIMENSIONS ARE DETERMINED AT THE OUTMOST EXTREMESOF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BARBURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDINGANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THEPLASTIC BODY.
5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
0.15 M AC B
SOT-89
FREESCALE SEMICONDUCTOR 98
WIRELESS RF PRODUCTSELECTOR GUIDE
CASE DIMENSIONS (continued)
B
5
2.5
5
0.15 C
2X
0.15 C
2X
PIN 1 INDEX
DETAIL G
M
M
2.21.8
AM0.1 BC
1
13
14 16
9
8 6
5
1
8X0.8
2.21.8
AM0.1 BC
1.2012X0.95
0.1 M AC B
0.05 M C
0.6212X0.48
1
EXPOSED DIEATTACH PAD
DETAIL M
C
0.05 C
16X
4
SEATING PLANE
0.1 C
2.22.0
2.201.95
2.201.95 (0.8)
(0.55)
0.70.3
0.1 M AC B
0.05 M C
0.920.78
(0.2)(0.2)
0.1 M AC B
0.05 M C
0.920.78
0.3712X0.23
0.70.3
(0.05)12X
NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. DIMENSIONING AND TOLERANCING PER ASMEY14.5M, 1994.
3. THE COMPLETE JEDEC DESIGNATOR FOR THISPACKAGE IS: HF−PQFP−N.
4. COPLANARITY APPLIES TO LEADS AND DIEATTACH PAD.
5. MINIMUM METAL GAP SHOULD BE 0.25MM
VIEW M - M
DETAIL MCORNER CONFIGURATION
DETAIL GVIEW ROTATED 90� CLOCKWISE
CASE 1543-02ISSUE A
PQFN 5x5
99FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
SELECTOR GUIDE PRODUCT INDEX
PageDevice Number Number
MBC13720 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MBC13900 22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MBC13916 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC13191 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC13192 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC13770 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC144110 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC144111 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC145026 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC145027 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC145028 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC145151-2 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC145152-2 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC145170-2 14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHL18336 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHL18926 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHL19338 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHL19926 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHL19936 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHL21336 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHL9236 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHL9236M 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHL9318 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHL9838 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHPA18010 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHPA19010 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHPA21010 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHVIC2114R2 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHVIC2115R2 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHVIC910HR2 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHVIC915R2 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1223LA 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1224LA 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1244 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1253LA 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1254L 46. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1254LA 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1303LA 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1304LA 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1345 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1346 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PageDevice Number Number
MHW1353LA 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW1354LA 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW6342T 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW7182B 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW7185C 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW7185CL 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW7205C 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW7205CL 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW7222B 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW7242A 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW7272A 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW7292A 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW7342 44. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8182B 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8185 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8185L 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8188A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8202B 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8205 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8205L 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8207A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8222B 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8227A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8242A 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8247A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8267A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8272A 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW8342 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9146 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9182B 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9186 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9187 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9188 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9188A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9189 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9189A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9206 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9207A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9227 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9227A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9236 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FREESCALE SEMICONDUCTOR 100
WIRELESS RF PRODUCTSELECTOR GUIDE
Selector Guide Product Index (continued)
PageDevice Number Number
MHW9242A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9247 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9247A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9267 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9267A 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MHW9276 42. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMG1001R2 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMG2001R2 43. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMG2401 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMG3001NT1 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMG3002NT1 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMG3003NT1 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMG3005T1 38. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMG5004 35. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MMM5063 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF1511T1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF1513T1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF1517T1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF1518T1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF1535FT1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF1535T1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF1550FT1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF1550T1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF1570FT1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF1570T1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18030ALR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18030ALSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18030BLR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18030BLSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18060ALSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18060AR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18060ASR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18060BLSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18060BR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18060BSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18085ALSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18085AR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18085BLSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18085BR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18090AR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18090BR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF18090BSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PageDevice Number Number
MRF19030LR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19030LSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19045LR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19045LSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19060R3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19060SR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19085LR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19085LSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19085R3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19085SR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19090R3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19090SR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF19125R3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21010LR1 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21010LSR1 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21030LR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21030LSR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21045LR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21045LSR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21060R3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21060SR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21085LSR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21085R3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21085SR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21090R3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21090SR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21120R6 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21125R3 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21125SR3 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF21180R6 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF281SR1 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF281ZR1 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF282SR1 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF282ZR1 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF284LR1 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF284LSR1 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF372 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF372R5 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF373ALR1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF373ALSR1 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF374A 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF377 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
101FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
Selector Guide Product Index (continued)
PageDevice Number Number
MRF377R3 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF377R5 16. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5P20180R6 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5P21180HR6 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5P21240R6 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S19060N 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S19060NB 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S19090LR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S19090LSR3 18. . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S19100HR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S19100HSR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S19130R3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S19130SR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S19150R3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S19150SR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S21090LR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S21090LSR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S21100HR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S21100HSR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S21130HR3 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S21130HSR3 20. . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S21150R3 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S21150SR3 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S9070NR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S9100MBR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S9100MR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S9100NBR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S9100NR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S9101MBR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S9101MR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S9101NBR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF5S9101NR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6522-70R3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6P21190H 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6P27160H 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S18060N 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S18060NB 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S18090N 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S18090NB 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S19060N 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S19060NB 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S19100H 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PageDevice Number Number
MRF6S19100HS 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S19100N 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S19100NB 18. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S19140H 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S19140HS 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S21060N 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S21060NB 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S21100HR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S21100HSR3 19. . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S21100N 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S21100NB 19. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S21140H 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S21140HS 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S27085H 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF6S27085HS 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9002R2 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9030LR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9030LSR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9030MBR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9030MR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9045LR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9045LSR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9045MBR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9045MR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9060LR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9060LSR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9060MBR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9060MR1 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9080LSR3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9080R3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9085LSR3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9085R3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9100R3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9100SR3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9120R3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9130LR3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9130LSR3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9135LR3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9135LSR3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9180R6 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9200LR3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRF9200LSR3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FREESCALE SEMICONDUCTOR 102
WIRELESS RF PRODUCTSELECTOR GUIDE
Selector Guide Product Index (continued)
PageDevice Number NumberMRF9210R3 17. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRFG35003M6T1 21. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRFG35003MT1 21. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRFG35005MT1 21. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRFG35010 21. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRFG35010MT1 21. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MRFG35030R5 21. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MW4IC001MR4 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MW4IC2020GMBR1 34. . . . . . . . . . . . . . . . . . . . . . . . . . .
PageDevice Number NumberMW4IC2020MBR1 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MW4IC2230GMBR1 34. . . . . . . . . . . . . . . . . . . . . . . . . . .
MW4IC2230MBR1 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MW4IC915GMBR1 34. . . . . . . . . . . . . . . . . . . . . . . . . . . .
MW4IC915MBR1 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MW5IC2030GMBR1 34. . . . . . . . . . . . . . . . . . . . . . . . . . .
MW5IC2030MBR1 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MWIC930GR1 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MWIC930R1 34. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
103FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
END OF LIFE PRODUCT INDEX
Freescale Semiconductor follows the industry standard�EIA-724 Product Life Cycle Data Model� to track the life cycleof its product. This model tracks the product�s life cycle from�Product Newly Introduced� to �Product Phase Out.� Productscan be phased for a variety of reasons: improved productperformance, change in technology roadmap, processobsolescence, market decline, etc. When products are
discontinued, a suggested possible replacement device or analternative source of supply for discontinued devices aremade available when possible.
For a list of discontinued devices with possible alternativesuppliers, please contact your local Freescale sales office orauthorized distributor, or visit the following URL:
http://www.motorola.com/rf
Wireless Infrastructure RF Products
Product Last Order Date Last Ship Date Possible Replacement
Not Recommended for New Design
MHW1224 � � MHW1224LA
MHW1304L � � MHW1304LA
MRF18090ASR3 � � MRF18085ALSR3
MRF19120 � � MRF5S19130R3
MRF19125SR3 � � MRF19125R3 or MRF5S19130SR3
End of Life
CA2810C Past Past MHW6342T
CA2830C Past Past MHW6342T
CA2832C Past Past None
CA901 Past Past MHW8182B
CA901A Past Past MHW8182B
CA922 Past Past MHW8185
CA922A Past Past MHW8185
MHL8018 Past Past None
MHL8115 Past Past None
MHL8118 Past Past None
MHVIC1905R2 � � MW4IC2020GMBR1
MHW1810-001 Past Past MW4IC2020MBR1
MHW1810-002 Past Past MW4IC2020MBR1
MHW1910-001 Past Past MW4IC2020MBR1
MHW5182A Past Past MHW7182B
MHW5222A Past Past None
MHW6181 Past Past MHW7182B
MHW6182 Past Past MHW7182B
MHW6272 Past Past MHW7272A
MHW7222A Past Past MHW7222B
MHW7292 Past Past None
MHW8185LR Past Past None
MHW8185R Past Past None
MHW8205R Past Past None
MHW8292 Past Past None
MHW910 Past Past MHVIC910HR2
FREESCALE SEMICONDUCTOR 104
WIRELESS RF PRODUCTSELECTOR GUIDE
END OF LIFE PRODUCT INDEX � continued
Product Last Order Date Last Ship Date Possible Replacement
End of Life - continued
MHW916 Past Past None
MRF1507T1 Past Past MRF1511T1 or MRF1517T1
MRF182 Past Past MRF9030LR1
MRF182R1 1/31/04 7/31/04 MRF9030LR1
MRF182LSR1 1/31/04 7/31/04 MRF9030LSR1
MRF182SR1 Past Past MRF9030LSR1
MRF183 Past Past MRF9045LR1
MRF183R1 1/31/04 7/31/04 MRF9045LR1
MRF183S Past Past MRF9045MR1 or MRF9045LSR1
MRF183SR1 Past Past MRF9045MR1 or MRF9045LSR1
MRF183LSR1 1/31/04 7/31/04 MRF9045MR1 or MRF9045LSR1
MRF184 Past Past MRF9060LR1
MRF184SR1 Past Past MRF9060LSR1 or MRF9060MR1
MRF184R1 1/31/04 7/31/04 MRF9060LR1
MRF184LSR1 1/31/04 7/31/04 MRF9060LSR1 or MRF9060MR1
MRF185 1/31/04 7/31/04 MRF9080R3
MRF186 1/31/04 7/31/04 MRF9120R3
MRF187 1/31/04 7/31/04 MRF9085R3
MRF187S Past Past MRF9085LSR3
MRF187SR3 1/31/04 7/31/04 MRF9085LSR3
MRF1946 Past Past MRF1535T1
MRF1946A Past Past MRF1535T1
MRF18090AS 12/31/03 6/30/04 MRF18085ALSR3
MRF19120S � � MRF5S19130SR3
MRF19125S 12/31/03 6/30/04 MRF19125R3 or MRF5S19130SR3
MRF20030R Past Past MRF19030LR3
MRF20060R Past Past MRF19060R3
MRF20060RS Past Past MRF19060R3
MRF21120S Past Past MRF21120R6
MRF21180S � � MRF21180R6 or MRF5P21180HR6
MRF247 Past Past MRF1550T1
MRF2628 Past Past None
MRF373 1/31/04 7/31/04 MRF373ALR1
MRF373R1 1/31/04 7/31/04 MRF373ALR1
MRF373S Past Past MRF373ALSR1
MRF373LSR1 1/31/04 7/31/04 MRF373ALSR1
MRF374 1/31/04 7/31/04 MRF374A
MRF492 Past Past MRF1550T1
MRF5015 Past Past None
MRF6401 Past Past None
MRF6404 Past Past MRF9030LR1
105FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
END OF LIFE PRODUCT INDEX � continued
Product Last Order Date Last Ship Date Possible Replacement
End of Life - continued
MRF646 Past Past MRF1550T1
MRF648 Past Past MRF1550T1
MRF650 Past Past MRF1550T1
MRF652 Past Past MRF1518T1
MRF6522-060 1/31/04 7/31/04 MRF9060LR1
MRF6522-10R1 1/31/04 7/31/04 MRF282SR1
MRF6522-5R1 1/31/04 7/31/04 MRF282ZR1 or MRF9002R2
MRF652S Past Past MRF1518T1
MRF847 Past Past MRF9045LR1
MRF857S Past Past MRF9002R2
MRF897 Past Past MRF9045LSR1
MRF897R Past Past MRF9045LR1
MRF898 Past Past MRF9060LR1
MRF899 Past Past MRF9180R6
MRF9120S � � MRF9120R3 or MRF9130LR3
MRF9180S � � MRF9180R6
MRFIC1501R2 1/9/04 7/9/04 None
TPV8100B Past Past None
For information on Wireless RF and IF handset products, see After Market Support at the following URL:http://www.motorola.com/rf
FREESCALE SEMICONDUCTOR 106
WIRELESS RF PRODUCTSELECTOR GUIDE
AFTER MARKET SUPPORT
For a list of discontinued devices with possible alternativesuppliers, please contact your local Freescale Semiconductorsales office or authorized distributor, or visit the following URL:
http://www.motorola.com/rfFor Wireless Infrastructure products transferred to another
manufacturer, see the list of Wireless Infrastructure RF
products below. After market support on these parts isavailable through M/A-COM. For additional information,contact M/A-COM Customer Service at (310) 320-6160 x354 (voice), [email protected] (email) or (310)618-9191 (FAX).
2N6439 MRF137 MRF171A MRF317
MRF10005 MRF140 MRF173 MRF321
MRF1000MB MRF141 MRF173CQ MRF323
MRF10031 MRF141G MRF174 MRF327
MRF1004MB MRF148A MRF175GU MRF392
MRF10120 MRF150 MRF175GV MRF393
MRF10150 MRF151 MRF175LU MRF421
MRF10350 MRF151G MRF176GU MRF422
MRF10502 MRF154 MRF176GV MRF426
MRF1090MA MRF157 MRF177 MRF428
MRF1090MB MRF158 MRF275G MRF429
MRF1150MA MRF160 MRF275L MRF448
MRF1150MB MRF16006 MRF3104 MRF454
MRF134 MRF16030 MRF313 MRF455
MRF136 MRF166C MRF314 MRF587
MRF136Y MRF166W MRF316
107FREESCALE SEMICONDUCTORWIRELESS RF PRODUCT
SELECTOR GUIDE
FREESCALE SEMICONDUCTOR 108
WIRELESS RF PRODUCTSELECTOR GUIDE
How to Reach Us:
USA/Europe/Locations Not Listed:Freescale Semiconductor Literature Distribution CenterP.O. Box 5405Denver, Colorado 802171-800-521-6274 or 480-768-2130
Japan:Freescale Semiconductor Japan Ltd.Technical Information Center3-20-1, Minami-Azabu, Minato-kuTokyo 106-8573, Japan81-3-3440-3569
Asia/Pacific:Freescale Semiconductors Hong Kong Ltd.Silicon Harbour Centre2 Dai King StreetTai Po Industrial EstateTai Po, N.T., Hong Kong852-26668334
Home Page:http://motorola.com/semiconductors
Information in this document is provided solely to enable system andsoftware implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to designor fabricate any integrated circuits or integrated circuits based on theinformation in this document.
Freescale Semiconductor reserves the right to make changes withoutfurther notice to any products herein. Freescale Semiconductor makes nowarranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductorassume any liability arising out of the application or use of any product orcircuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. ìTypicalî parameters that may be provided in Freescale Semiconductor data sheets and/orspecifications can and do vary in different applications and actualperformance may vary over time. All operating parameters, includingìTypicalsî, must be validated for each customer application by customerístechnical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductorproducts are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, orother applications intended to support or sustain life, or for any otherapplication in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. ShouldBuyer purchase or use Freescale Semiconductor products for any suchunintended or unauthorized application, Buyer shall indemnify and holdFreescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages,and expenses, and reasonable attorney fees arising out of, directly orindirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges thatFreescale Semiconductor was negligent regarding the design or manufacture of the part.
Freescaleô and the Freescale logo are trademarks ofFreescale Semiconductor, Inc. All other product or service namesare the property of their respective owners.
© Freescale Semiconductor, Inc. 2004
xxxxxx/DRev. 0xx/2004
FOR USE BEFORE IPO
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SG46/DRev. 265/2004
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