Optoacoplador (MOC 3011) - robotica-up.org · • El TRIAC al igual que el tiristor tiene dos...

• Son conocidos como optoaisladores o dispositivos de acoplamiento óptico, basan su funcionamiento en el empleo de un haz de radiación luminosa para pasar señales de un circuito a otro sin conexión eléctrica.

• Estos dispositivos son muy útiles para proteger nuestros microcontroladores.

• En general pueden sustituir a los relevadores ya que tienen una velocidad de conmutación mayor, así como, la ausencia de rebotes.

• La gran ventaja de un optoacoplador reside en el aislamiento eléctrico que puede establecerse entre los circuitos de entrada y salida.

Optoacoplador (MOC 3011)

• El MOC 3011 es un Opto – TRIAC.

• Fundamentalmente este dispositivo está formado por una fuente emisora de luz, y un fotosensor de silicio (TRIAC), que se adapta a la sensibilidad espectral del emisor luminoso.


• Diagrama de conexión de un MOC 3011 con un microcontrolador.


Verificar en el Datasheet que voltaje soporta el

Diodo emisor.

Diferentes tipos de Optoacopladores:

• Fototriac: se compone de un optoacoplador con una etapa de salida formada por un TRIAC (MOC 3011).

• Fototransistor: se compone de un optoacoplador con una etapa de salida formada por un transistor BJT (4N25 y 4N26).


¿Qué es un TRIAC ?

• El TRIAC (Triode for Alternative Current) es un dispositivo semiconductor de tres terminales que se usa para controlar el flujo de corriente promedio a una carga.

• El TRIAC al igual que el tiristor tiene dos estados de funcionamiento: bloqueo y conducción.

• El TRIAC es equivalente a dos tiristores (SCR) conectados en paralelo, su función es la de interruptor o switch electrónico en corriente alterna únicamente.

TRIAC

El SCR (Rectificador Controlado de Silicio):

Este es un pequeño dispositivo de tres terminales, que hacen el mismo trabajo semiconductor de un diodo normal (deja pasar corriente en un solo sentido), pero con la diferencia de que en éste se puede controlar el momento en el cual pueden comenzar a pasar los electrones.

TRIAC

• Dado que el TRIAC es un dispositivo bidireccional, no es posible identificar sus terminales como ánodo y cátodo.

• Un TRIAC puede ser activado con una sola señal positiva o negativa en la compuerta G.

TRIAC

MOC 3011 TRIAC 6071AG

Conexión:

1 2 3

6 5 4

1 2 G

VDC

MOC 3011 VAC

TRIAC

220 W

nc

nc

1Motorola Optoelectronics Device Data

" ! ! (250 Volts Peak)

The MOC3010 Series consists of gallium arsenide infrared emitting diodes,optically coupled to silicon bilateral switch and are designed for applicationsrequiring isolated triac triggering, low–current isolated ac switching, highelectrical isolation (to 7500 Vac peak), high detector standoff voltage, smallsize, and low cost.

• To order devices that are tested and marked per VDE 0884 requirements, thesuffix ”V” must be included at end of part number. VDE 0884 is a test option.

Recommended for 115 Vac(rms) Applications:

• Solenoid/Valve Controls

• Lamp Ballasts

• Interfacing Microprocessors to 115 Vac Peripherals

• Motor Controls

• Static ac Power Switch

• Solid State Relays

• Incandescent Lamp Dimmers

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

INFRARED EMITTING DIODE

Reverse Voltage VR 3 Volts

Forward Current — Continuous IF 60 mA

Total Power Dissipation @ TA = 25°CNegligible Power in Transistor

Derate above 25°C

PD 100

1.33

mW

mW/°C

OUTPUT DRIVER

Off–State Output Terminal Voltage VDRM 250 Volts

Peak Repetitive Surge Current(PW = 1 ms, 120 pps)

ITSM 1 A

Total Power Dissipation @ TA = 25°CDerate above 25°C

PD 3004

mWmW/°C

TOTAL DEVICE

Isolation Surge Voltage(1)

(Peak ac Voltage, 60 Hz, 1 Second Duration)VISO 7500 Vac(pk)

Total Power Dissipation @ TA = 25°CDerate above 25°C

PD 3304.4

mWmW/°C

Junction Temperature Range TJ –40 to +100 °C

Ambient Operating Temperature Range(2) TA –40 to +85 °C

Storage Temperature Range(2) Tstg –40 to +150 °C

Soldering Temperature (10 s) TL 260 °C1. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating.1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.Preferred devices are Motorola recommended choices for future use and best overall value.GlobalOptoisolator is a trademark of Motorola, Inc.

Order this documentby MOC3010/D

SEMICONDUCTOR TECHNICAL DATA

GlobalOptoisolator

Motorola, Inc. 1995

*Motorola Preferred Device

COUPLER SCHEMATIC

[IFT = 15 mA Max]

STANDARD THRU HOLECASE 730A–04

[IFT = 10 mA Max]

[IFT = 5 mA Max]

1. ANODE2. CATHODE3. NC4. MAIN TERMINAL5. SUBSTRATE

DO NOT CONNECT6. MAIN TERMINAL

1

2

3

6

5

4

STYLE 6 PLASTIC

61

(Replaces MOC3009/D)

2 Motorola Optoelectronics Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

INPUT LED

Reverse Leakage Current(VR = 3 V)

IR — 0.05 100 µA

Forward Voltage(IF = 10 mA)

VF — 1.15 1.5 Volts

OUTPUT DETECTOR (IF = 0 unless otherwise noted)

Peak Blocking Current, Either Direction(Rated VDRM(1))

IDRM — 10 100 nA

Peak On–State Voltage, Either Direction(ITM = 100 mA Peak)

VTM — 1.8 3 Volts

Critical Rate of Rise of Off–State Voltage (Figure 7, Note 2) dv/dt — 10 — V/µs

COUPLED

LED Trigger Current, Current Required to Latch Output(Main Terminal Voltage = 3 V(3)) MOC3010

MOC3011MOC3012

IFT———

853

15105

mA

Holding Current, Either Direction IH — 100 — µA

1. Test voltage must be applied within dv/dt rating.2. This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a function of the load–driving thyristor(s) only.3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max3. IFT (15 mA for MOC3010, 10 mA for MOC3011, 5 mA for MOC3012) and absolute max IF (60 mA).

–800

TYPICAL ELECTRICAL CHARACTERISTICSTA = 25°C

Figure 1. LED Forward Voltage versus Forward Current

2

1.8

1.6

1.4

1.2

11 10 100 1000

IF, LED FORWARD CURRENT (mA)

V F, F

ORW

ARD

VO

LTAG

E (V

OLT

S)

PULSE ONLYPULSE OR DC

85°C

25°C

Figure 2. On–State Characteristics

–3VTM, ON–STATE VOLTAGE (VOLTS)

I

–400

0

+400

+800

–2 –1 0 1 2 3

TM, O

N-S

TATE

CU

RR

ENT

(mA)

TA = –40°C


0.7

Figure 3. Trigger Current versus Temperature

–40TA, AMBIENT TEMPERATURE (°C)

0.9

1.1

1.3

1.5

–20 0 20 40 60 80

FTN

OR

MAL

IZED

I

0.5100

5

1PWin, LED TRIGGER WIDTH (µs)

10

15

20

25

2 5 2010 500

100

FTI, N

OR

MAL

IZED

LED

TR

IGG

ER C

UR

REN

T

NORMALIZED TO:PWin 100 µs

Figure 4. LED Current Required to Trigger versusLED Pulse Width

2

40TA, AMBIENT TEMPERATURE (°C)

4

6

8

10

25 30 50 7060 80

µdv

/dt,

STAT

IC (V

/

010090

12

STATIC dv/dtCIRCUIT IN FIGURE 6

s)

Figure 5. dv/dt versus Temperature

+250Vdc

PULSEINPUT MERCURY

WETTEDRELAY

RTEST

CTEST

R = 10 kΩ

X100SCOPEPROBED.U.T.

APPLIED VOLTAGEWAVEFORM 158 V

0 VOLTSRC

Vmax = 250 V

dvdt 0.63 Vmax

RC

158RC

1. The mercury wetted relay provides a high speed repeatedpulse to the D.U.T.

2. 100x scope probes are used, to allow high speeds andvoltages.

3. The worst–case condition for static dv/dt is established bytriggering the D.U.T. with a normal LED input current, thenremoving the current. The variable RTEST allows the dv/dt to begradually increased until the D.U.T. continues to trigger inresponse to the applied voltage pulse, even after the LEDcurrent has been removed. The dv/dt is then decreased untilthe D.U.T. stops triggering. RC is measured at this point andrecorded.

Figure 6. Static dv/dt Test Circuit


TYPICAL APPLICATION CIRCUITS

NOTE: This optoisolator should not be used to drive a load directly.It is intended to be a trigger device only. Additionalinformation on the use of the MOC3010/3011/3012 isavailable in Application Note AN–780A.

VCC Rin 1

2

6

4

180RL

120 V60 HzMOC3010

MOC3011MOC3012

VCC Rin 1

2

6

4

180120 V60 Hz

MOC3010MOC3011MOC3012

2.4 k

0.1 µF C1

VCC Rin 1

2

6

4

180

ZL

120 V60 HzMOC3010

MOC3011MOC3012

1.2 k

0.2 µF C1

Figure 7. Resistive Load Figure 8. Inductive Load with Sensitive Gate Triac(IGT 15 mA)

Figure 9. Inductive Load with Non–Sensitive Gate Triac(15 mA IGT 50 mA)

ZL


PACKAGE DIMENSIONS

CASE 730A–04ISSUE G

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. DIMENSION L TO CENTER OF LEAD WHEN

FORMED PARALLEL.

6 4

1 3

–A–

–B–

SEATINGPLANE

–T–

4 PLF

K

CN

G

6 PLD6 PLE

MAM0.13 (0.005) B MT

L

M

6 PLJMBM0.13 (0.005) A MT

DIM MIN MAX MIN MAXMILLIMETERSINCHES

A 0.320 0.350 8.13 8.89B 0.240 0.260 6.10 6.60C 0.115 0.200 2.93 5.08D 0.016 0.020 0.41 0.50E 0.040 0.070 1.02 1.77F 0.010 0.014 0.25 0.36G 0.100 BSC 2.54 BSCJ 0.008 0.012 0.21 0.30K 0.100 0.150 2.54 3.81L 0.300 BSC 7.62 BSCM 0 15 0 15 N 0.015 0.100 0.38 2.54

STYLE 6:PIN 1. ANODE

2. CATHODE3. NC4. MAIN TERMINAL5. SUBSTRATE6. MAIN TERMINAL

CASE 730C–04ISSUE D

–A–

–B–

SEATINGPLANE

–T–J

K

L

6 PL

MBM0.13 (0.005) A MT

C

D 6 PL

MAM0.13 (0.005) B MT

H

GE 6 PL

F 4 PL

31

46


Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.


A 0.320 0.350 8.13 8.89B 0.240 0.260 6.10 6.60C 0.115 0.200 2.93 5.08D 0.016 0.020 0.41 0.50E 0.040 0.070 1.02 1.77F 0.010 0.014 0.25 0.36G 0.100 BSC 2.54 BSCH 0.020 0.025 0.51 0.63J 0.008 0.012 0.20 0.30K 0.006 0.035 0.16 0.88L 0.320 BSC 8.13 BSCS 0.332 0.390 8.43 9.90

*Consult factory for leadform option availability


*Consult factory for leadform option availability


Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. DIMENSION L TO CENTER OF LEAD WHEN

FORMED PARALLEL.

CASE 730D–05ISSUE D

6 4

1 3

–A–

–B–

N

C

KG

F 4 PL

SEATING

D 6 PL

E 6 PL

PLANE

–T–

MAM0.13 (0.005) B MT

L

J


A 0.320 0.350 8.13 8.89B 0.240 0.260 6.10 6.60C 0.115 0.200 2.93 5.08D 0.016 0.020 0.41 0.50E 0.040 0.070 1.02 1.77F 0.010 0.014 0.25 0.36G 0.100 BSC 2.54 BSCJ 0.008 0.012 0.21 0.30K 0.100 0.150 2.54 3.81L 0.400 0.425 10.16 10.80N 0.015 0.040 0.38 1.02

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in differentapplications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola doesnot convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure ofthe Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any suchunintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmlessagainst all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:USA / EUROPE: Motorola Literature Distribution; JAPAN : Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: [email protected] – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MOC3010/D

◊

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

http://www.datasheetcatalog.com



© Semiconductor Components Industries, LLC, 2008

March, 2008 - Rev. 81 Publication Order Number:

2N6071/D

2N6071A/B SeriesPreferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed primarily for full‐wave AC control applications, such aslight dimmers, motor controls, heating controls and power supplies; orwherever full‐wave silicon gate controlled solid‐state devices areneeded. Triac type thyristors switch from a blocking to a conductingstate for either polarity of applied anode voltage with positive ornegative gate triggering.

Features

•Sensitive Gate Triggering Uniquely Compatible for Direct Couplingto TTL, HTL, CMOS and Operational Amplifier Integrated CircuitLogic Functions

•Gate Triggering: 4 Mode - 2N6071A, B; 2N6073A, B; 2N6075A, B•Blocking Voltages to 600 V•All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability•Small, Rugged, Thermopad Construction for Low Thermal

Resistance, High Heat Dissipation and Durability•Device Marking: Device Type, e.g., 2N6071A, Date Code

*For additional information on our Pb-Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

MT1

G

MT2

http://onsemi.com

TRIACS4.0 A RMS, 200 - 600 V

TO-225CASE 077STYLE 5

123

REAR VIEWSHOW TAB

x = 1, 3, 5y = A, BY = YearWW = Work WeekG = Pb-Free Package

MARKING DIAGRAM

YWW2N607xyG

1. Cathode2. Anode3. Gate

Preferred devices are recommended choices for future useand best overall value.

See detailed ordering and shipping information in the packagedimensions section on page 7 of this data sheet.

ORDERING INFORMATION

2N6071A/B Series

http://onsemi.com2

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

*Peak Repetitive Off‐State Voltage (Note 1)(TJ = 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)

2N6071A,B2N6073A,B2N6075A,B

VDRM,VRRM

200400600

V

*On‐State RMS Current (TC = 85°C) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 4.0 A

*Peak Non-repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C) ITSM 30 A

Circuit Fusing Considerations (t = 8.3 ms) I2t 3.7 A2s

*Peak Gate Power (Pulse Width ≤ 1.0 s, TC = 85°C) PGM 10 W

*Average Gate Power (t = 8.3 ms, TC = 85°C) PG(AV) 0.5 W

*Peak Gate Voltage (Pulse Width ≤ 1.0 s, TC = 85°C) VGM 5.0 V

*Operating Junction Temperature Range TJ -40 to +110 °C

*Storage Temperature Range Tstg -40 to +150 °C

Mounting Torque (6‐32 Screw) (Note 2) - 8.0 in. lb.

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above theRecommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affectdevice reliability.1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such

that the voltage ratings of the devices are exceeded.2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case‐to‐sink thermal

resistance. Main terminal 2 and heatsink contact pad are common.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

*Thermal Resistance, Junction-to-Case RJC 3.5 °C/W

Thermal Resistance, Junction-to-Ambient RJA 75 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

*Indicates JEDEC Registered Data.

2N6071A/B Series

http://onsemi.com3

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

*Peak Repetitive Blocking Current(VD = VDRM = VRRM; Gate Open) TJ = 25°C

TJ = 110°C

IDRM,IRRM -

---

102

AmA

ON CHARACTERISTICS

*Peak On‐State Voltage (Note 3) (ITM = 6.0 A Peak) VTM - - 2 V

*Gate Trigger Voltage (Continuous DC), All Quadrants(Main Terminal Voltage = 12 Vdc, RL = 100 , TJ = -40°C)

VGT- 1.4 2.5

V

Gate Non-Trigger Voltage, All Quadrants(Main Terminal Voltage = 12 Vdc, RL = 100 , TJ = 110°C)

VGD0.2 - -

V

*Holding Current(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 1 Adc)

TJ = -40°CTJ = 25°C

IH

--

--

3015

mA

Turn‐On Time (ITM = 14 Adc, IGT = 100 mAdc) tgt - 1.5 - s

QUADRANT(Maximum Value)

Type IGT @ TJI

mAII

mAIII

mAIV

mA

Gate Trigger Current (Continuous DC)(Main Terminal Voltage = 12 Vdc, RL = 100 )

2N6071A2N6073A2N6075A

+25°C 5 5 5 10

-40°C 20 20 20 30

2N6071B2N6073B2N6075B

+25°C 3 3 3 5

-40°C 15 15 15 20

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,Commutating di/dt = 2.0 A/ms

dv/dt(c) - 5 - V/s

3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.*Indicates JEDEC Registered Data.

Trigger devices are recommended for gating on Triacs. They provide:1. Consistent predictable turn‐on points.2. Simplified circuitry.3. Fast turn‐on time for cooler, more efficient and reliable operation.

SAMPLE APPLICATION:TTL‐SENSITIVE GATE 4 AMPERE TRIAC

TRIGGERS IN MODES II AND III

0 V

-VEE VEE = 5.0 V

MC7400

14

7

+

510

2N6071ALOAD

4115 VAC

60 Hz

2N6071A/B Series

http://onsemi.com4

+ Current

+ Voltage

VTM

IH

Symbol ParameterVDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1MainTerminal 2 +

Quadrant 3MainTerminal 2 -

VTM

IHVTM Maximum On State Voltage

IH Holding Current

MT1

(+) IGTGATE

(+) MT2

REF

MT1

(-) IGTGATE

(+) MT2

REF

MT1

(+) IGTGATE

(-) MT2

REF

MT1

(-) IGTGATE

(-) MT2

REF

-MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE(Positive Half Cycle)

+

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT - + IGT

All polarities are referenced to MT1.With in-phase signals (using standard AC lines) quadrants I and III are used.

SENSITIVE GATE LOGIC REFERENCE

IC Logic FunctionsFiring Quadrant

I II III IV

TTL 2N6071A Series 2N6071A Series

HTL 2N6071A Series 2N6071A Series

CMOS (NAND) 2N6071B Series 2N6071B Series

CMOS (Buffer) 2N6071B Series 2N6071B Series

Operational Amplifier 2N6071A Series 2N6071A Series

Zero Voltage Switch 2N6071A Series 2N6071A Series

2N6071A/B Series

http://onsemi.com5

IT(AV), AVERAGE ON‐STATE CURRENT (AMP)

140120100806040200-20-40-600.3

0.5

0.7

1.0

2.0 2.0

3.0

0.5

0.3

0.7

1.0

120

3.0

-60 -40 -20 0 20 40 60 80 100 140

OFF‐STATE VOLTAGE = 12 VdcALL MODES

OFF‐STATE VOLTAGE = 12 VdcALL MODES

TJ, JUNCTION TEMPERATURE (°C)TJ, JUNCTION TEMPERATURE (°C)

120°

90°

30°

dc

0

2.0

4.0

8.0

6.0

4.03.02.01.0IT(RMS), RMS ON‐STATE CURRENT (AMP)

3.0 00

2.0

4.0

6.0

0 1.0 2.0

8.0

4.0

α = 30°

60°

90°120°

180°dc

IT(AV), AVERAGE ON‐STATE CURRENT (AMP)

80

3.0

90

70

100

0 1.0 2.0

110

4.0

60°

120°

dc

α = CONDUCTION ANGLE

a

a

a


a

70

80

3.0

100

0 1.0 2.0

90

α

a

110

120°

180°

dc

90°

α = 30°

a

a


4.0IT(RMS), RMS ON‐STATE CURRENT (AMP)

180°

α = 30°

90°


60°

60°

T ,

CAS

E TE

MPE

RAT

UR

E (

C)

C°

T ,

CAS

E TE

MPE

RAT

UR

E (

C)

C°

P

, A

VER

AGE

POW

ER (W

ATTS

)(A

V)V

GT

P

, A

VER

AGE

POW

ER (W

ATTS

)(A

V)I G

Tα = 180°

Figure 1. Average Current Derating Figure 2. RMS Current Derating

Figure 3. Power Dissipation Figure 4. Power Dissipation

Figure 5. Typical Gate-Trigger Voltage Figure 6. Typical Gate-Trigger Current

, GAT

E TR

IGG

ER V

OLT

AGE

(NO

RM

ALIZ

ED)

, GAT

E TR

IGG

ER C

UR

REN

T (N

OR

MAL

IZED

)

2N6071A/B Series

http://onsemi.com6

, TR

ANSI

ENT

THER

MAL

IMPE

DAN

CE

(40

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.10 1.0 2.0 3.0 4.0 5.0

VTM, ON‐STATE VOLTAGE (VOLTS)

TJ = 110°C

TJ = 25°C

3.0

2.0

1.0

0.7

0.5

0.3-60 -40 -20 0 20 40 60 80 100 120 140

TJ, JUNCTION TEMPERATURE (°C)

GATE OPENAPPLIES TO EITHER DIRECTION

34

32

30

28

26

24

22

20

18

16

141.0 2.0 3.0 4.0 5.0 7.0 10

NUMBER OF FULL CYCLES

TJ = -40 to +110°Cf = 60 Hz

0.20.1 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

MAXIMUM

TYPICAL

0.1

0.2

0.5

1.0

2.0

3.0

5.0

10

0.3

t, TIME (ms)

I H, H

OLD

ING

CU

RR

ENT

(NO

RM

ALIZ

ED)

I TM

, ON

‐STA

TE C

UR

REN

T (A

MP)

PEAK

SIN

E W

AVE

CU

RR

ENT

(AM

P)

Z θJC

(t)°C

/W)

30

20

10

Figure 7. Maximum On-State Characteristics

Figure 8. Typical Holding Current

Figure 9. Maximum Allowable Surge Current

Figure 10. Thermal Response

2N6071A/B Series

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ORDERING INFORMATION

Device Package Shipping†

2N6071A TO-225

500 Units / Box2N6071AG TO-225(Pb-Free)

2N6071AT TO-225 50 Units / Tube2000 Units / Box

2N6071ATG TO-225(Pb-Free)

50 Units / Tube2000 Units / Box

2N6071B TO-225

500 Units / Box2N6071BG TO-225(Pb-Free)

2N6071BT TO-225 50 Units / Tube2000 Units / Box

2N6071BTG TO-225(Pb-Free)

50 Units / Tube2000 Units / Box

2N6073A TO-225

500 Units / Box

2N6073AG TO-225(Pb-Free)

2N6073B TO-225

2N6073BG TO-225(Pb-Free)

2N6075A TO-225

2N6075AG TO-225(Pb-Free)

2N6075B TO-225

2N6075BG TO-225(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.

2N6071A/B Series

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PACKAGE DIMENSIONS

TO-225CASE 77-09

ISSUE ZNOTES:

1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.3. 077-01 THRU -08 OBSOLETE, NEW STANDARD

077-09.

-B-

-A-M

K

F C

Q

H

VG

S

D

JR

U

1 32

2 PL

MAM0.25 (0.010) B M

MAM0.25 (0.010) B M


A 0.425 0.435 10.80 11.04B 0.295 0.305 7.50 7.74C 0.095 0.105 2.42 2.66D 0.020 0.026 0.51 0.66F 0.115 0.130 2.93 3.30G 0.094 BSC 2.39 BSCH 0.050 0.095 1.27 2.41J 0.015 0.025 0.39 0.63K 0.575 0.655 14.61 16.63M 5 TYP 5 TYPQ 0.148 0.158 3.76 4.01R 0.045 0.065 1.15 1.65S 0.025 0.035 0.64 0.88U 0.145 0.155 3.69 3.93V 0.040 --- 1.02 ---

STYLE 5:PIN 1. MT 1

2. MT 23. GATE

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2N6071/D

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